The Influence of Low Temperature Pre-Annealing on the Defect Removal and the Reduction of Junction Depth in Excimer Laser Annealing

2002 ◽  
Vol 717 ◽  
Author(s):  
Sungkweon Baek ◽  
Taesung Jang ◽  
Hyunsang Hwang
Keyword(s):  
Low Temperature ◽  
Leakage Current ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Process Conditions ◽  
Junction Depth ◽  
Excimer Laser Annealing ◽  
Transmission Electron Microscopy Analysis ◽  
Shallow Junction

AbstractThe influence of low temperature pre-annealing on p+/n ultra-shallow junction was investigated. An ultra-shallow junction was formed by means of B2H6 plasma doping at an energy of 500V. The activation was performed by excimer laser annealing. To study the low temperature annealing prior to laser annealing, furnace annealing at 300°C∼500°C for 5min was performed. Compared with control samples with no pre-annealing, the low temperature preannealing significantly improves junction characteristics, resulting in a reduction of junction depth and a lower leakage current density. A cross-sectional transmission electron microscopy analysis confirmed the lower defect density, which explains the lower leakage current. By optimizing the process conditions, excellent electrical characteristics of the p+/n ultra-shallow junction such as a junction depth of 28nm and a sheet resistance of 250Δ/sq. can be obtained.

Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing

2014 ◽  
Vol 61 (9) ◽  
pp. 3060-3065 ◽  
Author(s):  
Chen Wang ◽  
Cheng Li ◽  
Guangyang Lin ◽  
Weifang Lu ◽  
Jiangbin Wei ◽  
...  
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Rectification Ratio ◽  
Excimer Laser Annealing ◽  
Shallow Junction

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Enhancement of On/Off Current Ratio of Poly-Silicon TFT by Selective Laser-Induced Crystallization of Active Layer

1997 ◽  
Vol 471 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Cheol-Min Park ◽  
Hong-Seok Choi ◽  
Cheon-Hong Kim ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
Active Layer ◽  
Laser Annealing ◽  
Wave Length ◽  
Excimer Laser Annealing ◽  
Current Ratio ◽  
Ito Film ◽  
Conduction Channel ◽  
Induced Crystallization

ABSTRACTWe have proposed the new poly-Si TFT which reduces the leakage current effectively by employing highly resistive a-Si region in the channel. The active layer of proposed device is crystallized selectively by employing excimer laser annealing while the both sides of channel near the source/drain are not recrystallized and remained as a-Si. Unlikely LDD or offset structure, the a-Si region which is designed to reduce the leakage current acts as the conduction channel of carriers under the ON state, so that the ON current is decreased very little. The selectively crystallized active layer can be fabricated by irradiating the excimer laser through ITO film of which transmittance at the wave length of laser is selectively adjusted. In the course of fabricating the proposed device, any additional photo masking step is not necessary and misalign problem is eliminated. The experimental results show that the ON/OFF current ratio of proposed poly-Si TFT is 106 while that of conventional one is 105.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 461-465 ◽  
Author(s):  
P.C. van der Wilt ◽  
M.G. Kane ◽  
A.B. Limanov ◽  
A.H. Firester ◽  
L. Goodman ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Density ◽  
Solid Phase ◽  
Flexible Substrates ◽  
Full Potential ◽  
Laser Crystallization ◽  
Silicon Thin Film ◽  
Excimer Laser Annealing ◽  
Si Films

AbstractLow-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 2092-2099 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Akio Mimura ◽  
Nobutake Konishi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Doping ◽  
Si Thin Film

High-Performance Poly-Si TFTs with Multiple Selectively Doped Regions in the Active Layer

2000 ◽  
Vol 621 ◽  
Author(s):  
Min-Cheol Lee ◽  
Juhn-Suk Yoo ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Channel Length ◽  
Depletion Region ◽  
Excimer Laser Annealing ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

ABSTRACTWe have proposed and fabricated a new poly-Si TFT that employs selectively doped regions between the source and drain in order to reduce leakage current without the sacrifice of the on current. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of source/drain, reduce the effective channel length during the on state. Under the off state, the selectively doped regions may reduce the lateral electric field induced in the depletion region near drain so that the leakage current reduces considerably. The experimental data of the proposed TFT shows that it has the high on-current, low leakage current and low threshold voltage when compared with conventional TFT. The fabrication steps for the proposed TFT are reduced because ion-implantation for source/drain and selectively doped regions is performed simultaneously prior to an excimer laser irradiation. It should be noted that, in the proposed TFT, only one excimer laser annealing is required while two excimer laser annealing steps are required in conventional TFT.

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