Defects Induced by Helium Implantation: Interaction with Boron and Phosphorus

AbstractHigh dose He implantation, followed by a thermal annealing, is a suitable technique for metal gettering. Nevertheless, a strong interaction between the dopants and the defect layer has been evidenced. This can largely influence the dopant distribution. In order to study this interaction, p and n-type samples uniformly doped were implanted with helium (40 keV, 5×1016 He+.cm-2) and furnace annealed for various times and temperatures. In this paper, we shed light on the evolution of the dopant segregation. Using isochronal treatment, we found a large dependence of the dopant gettering phenomenon upon annealing temperature. Moreover, stability of the gettered fraction is observed for isothermal annealing. This study permits also to investigate the origin of the trapping mechanism involved for both boron and phosphorus.

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Defects Induced by Helium Implantation: Impact on Boron Diffusivity

MRS Proceedings ◽

10.1557/proc-864-e7.4 ◽

2005 ◽

Vol 864 ◽

Author(s):

F. Cayrel ◽

D. Alquier ◽

C. Dubois ◽

R. Jerisian

Keyword(s):

Defect Density ◽

Defect Layer ◽

High Dose ◽

Boron Diffusion ◽

Enhanced Diffusion ◽

Helium Implantation ◽

Buried Layer ◽

Boron Diffusivity ◽

Induced Defects ◽

Metallic Impurities

AbstractHigh dose helium implantation followed by a suitable thermal treatment induces defects such as cavities and dislocations. Gettering efficiency of this technique for metallic impurities has been widely proved. Nevertheless, dopants, as well as point defects, interact with this defect layer. Due to the presence of vacancy type defects after helium implantation, boron diffusion can be largely influenced by such a buried layer. In this paper, we study the influence of helium induced defects on boron diffusion. The boron diffusion in presence of these defects has been analyzed as a function of different parameters such as distance between boron profile and defect layer and defect density. Our results demonstrate that the major impact known as boron enhanced diffusion can be partially or completely suppressed depending on parameters of experiments. Moreover, these results clarify the interaction of boron with extended He-induced defects.

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Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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Microstructural Effects of High Dose Helium Implantation in ErD2

Materialia ◽

10.1016/j.mtla.2021.101280 ◽

2021 ◽

pp. 101280

Author(s):

Caitlin A. Taylor ◽

David B. Robinson ◽

Joshua D. Sugar ◽

Eric Lang ◽

Christopher M. Barr ◽

...

Keyword(s):

High Dose ◽

Microstructural Effects ◽

Helium Implantation

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Impact of Hydrogen Implantation on Helium Implantation Induced Defects

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.309 ◽

2005 ◽

Vol 108-109 ◽

pp. 309-314 ◽

Cited By ~ 3

Author(s):

G. Gaudin ◽

Frédéric Cayrel ◽

Corrado Bongiorno ◽

Robert Jérisian ◽

Vito Raineri ◽

...

Keyword(s):

Cavity Growth ◽

High Dose ◽

Defect Band ◽

Hydrogen Addition ◽

Recent Developments ◽

Hydrogen Implantation ◽

Helium Implantation ◽

Silicon Based ◽

Induced Defects ◽

The Impact

Silicon-based power device performances are largely affected by metal contamination occurring during device manufacturing. Among the usual gettering techniques, recent developments were done on high dose helium implantation. Even though the gettering efficiency of this technique has been demonstrated in device application, the required doses are still extremely high for an industrial application. Recently, it has been shown that the use of H/He co-implantation limits the total requested doses [1]. In this paper, co-implantation of H/He, which has been already used to reduce the dose in the smart-cut® process is explored. The goal of this work is to decrease efficiently the implanted dose maintaining an efficient metallic gettering without degrading the Si surface. The impact of H implantation on He implantation induced defects is carefully studied. The TEM observations have evidenced that hydrogen addition drastically modified the defect band structure and promotes the cavity growth.. Additionally, we demonstrate that an efficient gettering can be obtained.

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keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

MRS Proceedings ◽

10.1557/proc-354-171 ◽

1994 ◽

Vol 354 ◽

Cited By ~ 18

Author(s):

J.K.N. Lindner ◽

A. Frohnwieser ◽

B. Rauschenbach ◽

B. Stritzker

Keyword(s):

Ion Implantation ◽

Annealing Time ◽

Annealing Temperature ◽

Ion Beam ◽

High Dose ◽

Layer Formation ◽

Substrate Orientation ◽

Ion Beam Synthesis ◽

Buried Layers ◽

Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

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Devitrification of an FE43 CR25NI20 B12 Glass

MRS Proceedings ◽

10.1557/proc-58-105 ◽

1985 ◽

Vol 58 ◽

Cited By ~ 1

Author(s):

Teiichi Ando ◽

Yutaka Hara ◽

N.J. Grant

Keyword(s):

Low Temperatures ◽

Annealing Temperature ◽

Isothermal Annealing ◽

Magnetic Measurements ◽

X Ray ◽

Bcc Phase ◽

Kinetics Of

ABSTRACTThe kinetics of bcc crystallization and subsequent transformations in an Fe43Cr25Ni20B12 glass were monitored by magnetic measurements and X-ray diffrsaction. The metastable bcc phase (ferrite) which forms first transforms to austenite and a boride during isothermal annealing. At low temperatures the ferritegrows without significant partitioning of Fe, Cr and Ni. Increasing the annealing temperature results in alloy partitioning which is directly linked with the ferrite decomposition.

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Thickness Dependent Stress Relaxation with the Onset of L10 Ordering in FePt Thin Films

MRS Proceedings ◽

10.1557/proc-795-u5.8 ◽

2003 ◽

Vol 795 ◽

Author(s):

K. W. Wierman ◽

C. L. Platt ◽

J. K. Howard

Keyword(s):

Stress Relaxation ◽

Annealing Temperature ◽

Isothermal Annealing ◽

Annealed Film ◽

Peak Position ◽

Chemical Ordering ◽

Ordering Kinetics ◽

High Anisotropy ◽

Time Dependencies ◽

Stress States

ABSTRACTDuring the chemical ordering of the high anisotropy FePt L10 phase a fcc-→fct structural distortion in the unit cell occurs. Monitoring the stress relaxation time dependencies during isothermal annealing cycles may lead to a better understanding of the L10 ordering kinetics thickness dependencies in thin FePt films. During the isothermal portion of the anneal cycle all films showed an exponentially decaying stress relaxation with time to lower compressive stress states for all temperatures and thickness. The stress relaxation rate increased significantly with an increase in Fe51Pt49 film thickness and annealing temperature. Stress relaxation activation energies of 2.21 eV, 2.40 eV, and 2.96 eV for the 50nm, 25nm, and 10nm Fe51Pt49 films, respectively, were extracted. This correlated well with the observed trends in the post annealed film coercivity, increase of the (001) superlattice L10 peak, and the shifting of the (111) peak position, all indicators of L10 chemical ordering transformation.

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Recrystallization and Precipitation of β-Mg17Al12 Phase of the Cold-Rolled Mg-9Al-1Zn Alloy Strip during Isothermal Annealing

Materials Science Forum ◽

10.4028/www.scientific.net/msf.789.336 ◽

2014 ◽

Vol 789 ◽

pp. 336-343 ◽

Cited By ~ 1

Author(s):

Yan Bin Jiang ◽

Zhi Hao Zhang ◽

Lei Guan ◽

Guo Yi Tang

Keyword(s):

Grain Growth ◽

Annealing Temperature ◽

Isothermal Annealing ◽

Competitive Behavior ◽

Alloy Strip ◽

High Deformation ◽

Annealing Conditions ◽

Mg17al12 Phase ◽

Cold Rolled ◽

Deformation Area

Effect of isothermal annealing on the microstructure evolution of the cold-rolled Mg-9Al-1Zn alloy strip was investigated. It is found that the competition between the precipitation of β-Mg17Al12 phase and recrystallization of α-Mg matrix occur under the conditions of various annealing temperature and time. At a low annealing temperature (523K), the β-Mg17Al12 particles precipitate preferentially at locally high deformation area and grow into the lamellar-cluster with an increase in the annealing time, retarding the recrystallization of α-Mg matrix. With raising the annealing temperature (573~623K), both the precipitation of β-Mg17Al12 particles and recrystallization of α-Mg matrix take place. Both recrystallization and grain growth are prone to proceed without precipitation of β-Mg17Al12 particles when the annealing temperature is 673K. A mechanism for the competitive behavior between the precipitation of β-Mg17Al12 phase and recrystallization of α-Mg matrix at various annealing conditions is discussed.

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