Microstructural Effects of High Dose Helium Implantation in ErD2

Materialia ◽  
2021 ◽  
pp. 101280
Author(s):  
Caitlin A. Taylor ◽  
David B. Robinson ◽  
Joshua D. Sugar ◽  
Eric Lang ◽  
Christopher M. Barr ◽  
...  
Keyword(s):  
High Dose ◽  
Microstructural Effects ◽  
Helium Implantation

Impact of Hydrogen Implantation on Helium Implantation Induced Defects

2005 ◽  
Vol 108-109 ◽  
pp. 309-314 ◽  
Author(s):  
G. Gaudin ◽  
Frédéric Cayrel ◽  
Corrado Bongiorno ◽  
Robert Jérisian ◽  
Vito Raineri ◽  
...  
Keyword(s):  
Cavity Growth ◽  
High Dose ◽  
Defect Band ◽  
Hydrogen Addition ◽  
Recent Developments ◽  
Hydrogen Implantation ◽  
Helium Implantation ◽  
Silicon Based ◽  
Induced Defects ◽  
The Impact

Silicon-based power device performances are largely affected by metal contamination occurring during device manufacturing. Among the usual gettering techniques, recent developments were done on high dose helium implantation. Even though the gettering efficiency of this technique has been demonstrated in device application, the required doses are still extremely high for an industrial application. Recently, it has been shown that the use of H/He co-implantation limits the total requested doses [1]. In this paper, co-implantation of H/He, which has been already used to reduce the dose in the smart-cut® process is explored. The goal of this work is to decrease efficiently the implanted dose maintaining an efficient metallic gettering without degrading the Si surface. The impact of H implantation on He implantation induced defects is carefully studied. The TEM observations have evidenced that hydrogen addition drastically modified the defect band structure and promotes the cavity growth.. Additionally, we demonstrate that an efficient gettering can be obtained.

Defects Induced by Helium Implantation: Interaction with Boron and Phosphorus

2002 ◽  
Vol 719 ◽  
Author(s):  
F. Cayrel ◽  
D. Alquier ◽  
F. Roqueta ◽  
L. Ventura ◽  
C. Dubois ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Isothermal Annealing ◽  
Defect Layer ◽  
High Dose ◽  
Dopant Distribution ◽  
Dopant Segregation ◽  
Trapping Mechanism ◽  
Helium Implantation ◽  
Suitable Technique ◽  
Shed Light

AbstractHigh dose He implantation, followed by a thermal annealing, is a suitable technique for metal gettering. Nevertheless, a strong interaction between the dopants and the defect layer has been evidenced. This can largely influence the dopant distribution. In order to study this interaction, p and n-type samples uniformly doped were implanted with helium (40 keV, 5×1016 He+.cm-2) and furnace annealed for various times and temperatures. In this paper, we shed light on the evolution of the dopant segregation. Using isochronal treatment, we found a large dependence of the dopant gettering phenomenon upon annealing temperature. Moreover, stability of the gettered fraction is observed for isothermal annealing. This study permits also to investigate the origin of the trapping mechanism involved for both boron and phosphorus.

Defects Induced by Helium Implantation: Impact on Boron Diffusivity

2005 ◽  
Vol 864 ◽  
Author(s):  
F. Cayrel ◽  
D. Alquier ◽  
C. Dubois ◽  
R. Jerisian
Keyword(s):  
Defect Density ◽  
Defect Layer ◽  
High Dose ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Helium Implantation ◽  
Buried Layer ◽  
Boron Diffusivity ◽  
Induced Defects ◽  
Metallic Impurities

AbstractHigh dose helium implantation followed by a suitable thermal treatment induces defects such as cavities and dislocations. Gettering efficiency of this technique for metallic impurities has been widely proved. Nevertheless, dopants, as well as point defects, interact with this defect layer. Due to the presence of vacancy type defects after helium implantation, boron diffusion can be largely influenced by such a buried layer. In this paper, we study the influence of helium induced defects on boron diffusion. The boron diffusion in presence of these defects has been analyzed as a function of different parameters such as distance between boron profile and defect layer and defect density. Our results demonstrate that the major impact known as boron enhanced diffusion can be partially or completely suppressed depending on parameters of experiments. Moreover, these results clarify the interaction of boron with extended He-induced defects.

Studies of the Effects of Ion-Implantation and Electron Beam Irradiation on CuInSe2 Single Crystals

1992 ◽  
Vol 262 ◽  
Author(s):  
C. A. Mullan ◽  
C. J. Kiely ◽  
A. Rockett ◽  
M. Imanieh ◽  
M. V. Yakushev ◽  
...  
Keyword(s):  
Electron Beam ◽  
Single Crystals ◽  
Electron Beam Irradiation ◽  
High Dose ◽  
Beam Irradiation ◽  
Thin Foils ◽  
Microstructural Effects ◽  
Vertical Bridgman ◽  
Electron Microscopes ◽  
P Type

ABSTRACTA series of CuInSe2 single crystals which were grown by the vertical Bridgman technique have been implanted with oxygen and xenon ions. These implants tend to cause a change from n to p-type conductivity and an enhancement of the photoconductivity. We present HREM and SIMS characterisation of the microstructural effects caused by high dose ion implants on CuInSe2. We also correlate our data with calculated ion implant profiles. In addition, we show that CuInSe2 thin foils can undergo significant degradation under the electron beam irradiation conditions which are commonly encountered in electron microscopes.

High Voltage Transmission Microscopy of Surveyor III Camera Shrouds

1971 ◽  
Vol 29 ◽  
pp. 138-139
Author(s):  
W. R. Duff ◽  
L. E. Thomas ◽  
R. M. Fisher ◽  
S. V. Radcliffe
Keyword(s):  
Alloy Sheet ◽  
Transmission Microscopy ◽  
Television Camera ◽  
Window Method ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Lunar Environment ◽  
Successful Retrieval ◽  
Materials Used ◽  
Abrasive Paper

Successful retrieval of the television camera and other components from the Surveyor III spacecraft by the Apollo 12 astronauts has provided a unique opportunity to study the effects of a known and relatively extensive exposure to the lunar environment. Microstructural effects including those produced by micro-meteorite impact, radiation damage (by both the solar wind and cosmic rays) and solar heating might be expected in the materials used to fabricate the spacecraft. Samples received were in the form of 1 cm2 of painted unpainted aluminum alloy sheet from the top of the camera visor (JPL Code 933) and the sides (935,936) and bottom (934) of the lower camera shroud. They were prepared for transmission electron microscopy by first hand-grinding with abrasive paper to a thickness of 0.006". The edges were lacquered and the sample electropolished in 10% perchloric methanol using the “window” method, to a thickness of ~0.001". Final thinning was accomplished by polishing 3 mm punched disks in an acetic-phosphoric-nitric acid solution.

Electron Beam Damage of Biomolecules Assessed by Energy Loss Spectroscopy

1978 ◽  
Vol 36 (3) ◽  
pp. 61-69
Author(s):  
M. Isaacson ◽  
M.L. Collins ◽  
M. Listvan
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Structural Integrity ◽  
Analytical Electron Microscopy ◽  
High Dose ◽  
Dose Rates ◽  
Special Cases ◽  
Analytical Electron ◽  
Atom Migration ◽  
Beam Damage

Over the past five years it has become evident that radiation damage provides the fundamental limit to the study of blomolecular structure by electron microscopy. In some special cases structural determinations at very low doses can be achieved through superposition techniques to study periodic (Unwin & Henderson, 1975) and nonperiodic (Saxton & Frank, 1977) specimens. In addition, protection methods such as glucose embedding (Unwin & Henderson, 1975) and maintenance of specimen hydration at low temperatures (Taylor & Glaeser, 1976) have also shown promise. Despite these successes, the basic nature of radiation damage in the electron microscope is far from clear. In general we cannot predict exactly how different structures will behave during electron Irradiation at high dose rates. Moreover, with the rapid rise of analytical electron microscopy over the last few years, nvicroscopists are becoming concerned with questions of compositional as well as structural integrity. It is important to measure changes in elemental composition arising from atom migration in or loss from the specimen as a result of electron bombardment.

Electron-diffraction studies in synthetic polymer materials

1983 ◽  
Vol 41 ◽  
pp. 362-365
Author(s):  
D.T. Grubb
Keyword(s):  
Electron Diffraction ◽  
Synthetic Polymer ◽  
Polymer Materials ◽  
Crystallographic Structure ◽  
High Dose ◽  
Electron Dose ◽  
Dose Rates ◽  
First Case ◽  
Diffraction Patterns ◽  
The Many

Diffraction studies in polymeric and other beam sensitive materials may bring to mind the many experiments where diffracted intensity has been used as a measure of the electron dose required to destroy fine structure in the TEM. But this paper is concerned with a range of cases where the diffraction pattern itself contains the important information.In the first case, electron diffraction from paraffins, degraded polyethylene and polyethylene single crystals, all the samples are highly ordered, and their crystallographic structure is well known. The diffraction patterns fade on irradiation and may also change considerably in a-spacing, increasing the unit cell volume on irradiation. The effect is large and continuous far C94H190 paraffin and for PE, while for shorter chains to C 28H58 the change is less, levelling off at high dose, Fig.l. It is also found that the change in a-spacing increases at higher dose rates and at higher irradiation temperatures.

Microprobe analysis of inclusion bodies related to two benzofuran derivatives

1987 ◽  
Vol 45 ◽  
pp. 672-673
Author(s):  
T. L. Benning ◽  
P. Ingram ◽  
J. D. Shelburne
Keyword(s):  
Inclusion Bodies ◽  
Uranyl Acetate ◽  
Multiple Organ ◽  
High Dose ◽  
En Bloc ◽  
Tissue Samples ◽  
Transmission Electron ◽  
Organ Systems ◽  
Dense Inclusion ◽  
Melanin Complex

Two benzofuran derivatives, chlorpromazine and amiodarone, are known to produce inclusion bodies in human tissues. Prolonged high dose chlorpromazine therapy causes hyperpigmentation of the skin with electron-dense inclusion bodies present in dermal histiocytes and endothelial cells ultrastructurally. The nature of the deposits is not known although a drug-melanin complex has been hypothesized. Amiodarone may also cause cutaneous hyperpigmentation and lamellar lysosomal inclusion bodies have been demonstrated within the cells of multiple organ systems. These lamellar bodies are believed to be the product of an amiodarone-induced phospholipid storage disorder. We performed transmission electron microscopy (TEM) and energy dispersive x-ray microanalysis (EDXA) on tissue samples from patients treated with these drugs, attempting to detect the sulfur atom of chlorpromazine and the iodine atom of amiodarone within their respective inclusion bodies.A skin biopsy from a patient with hyperpigmentation due to prolonged chlorpromazine therapy was fixed in 4% glutaraldehyde and processed without osmium tetroxide or en bloc uranyl acetate for Epon embedding.

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