Accuracy and Reproducibility of X-ray Texture Measurements on Thin Films

2002 ◽  
Vol 721 ◽  
Author(s):  
Mark D. Vaudin ◽  
Glen R. Fox ◽  
Glen R. Kowach
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Full Width ◽  
Half Maximum ◽  
Rocking Curve ◽  
X Ray ◽  
Area Detector ◽  
Geometric Factors ◽  
Pt Films

AbstractRocking curve texture measurements were made on thin films of zinc oxide (ZnO) and platinum (Pt) using a powder x-ray diffractometer, and, in the case of ZnO, an area detector. The intensity corrections for defocussing and other geometric factors were made using a technique and associated software (Texture Plus*) developed at NIST. In both thin film systems, the texture was axisymmetric (fiber) and sharp, with full width at half maximum values of about 2.5°. Care was taken in the Pt case to ensure that the linear range of the x-ray detector was used to measure the intensities; for the ZnO data the degree of detector non-linearity was determined, and corrections were applied where necessary. The suitability of the Pt films for thin film texture standards was studied.

Studies of Crystalunity for Sputter Deposited Bi-Based Oxide Films

1992 ◽  
Vol 275 ◽  
Author(s):  
Koichi Mizuno ◽  
Yo Ichikawa ◽  
Kentaro Setsune
Keyword(s):  
Thin Films ◽  
Oxide Films ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Sputter Deposited

ABSTRACTCrystalline quality of Bi-based oxide films has been evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2Cu1O8-δ (BSCO) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO(100) and SrTiO3(100) substrates at the low temperature of 650°C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3(100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec).

On the problem of overlapping ω scans measured on thin films deposited on monocrystal substrates

1999 ◽  
Vol 32 (4) ◽  
pp. 736-743 ◽  
Author(s):  
D. Machajdík ◽  
A. Pevala ◽  
A. Rosová ◽  
K. Fröhlich ◽  
J. Šouc ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spectral Characteristics ◽  
Full Width ◽  
X Ray Diffraction ◽  
Resolution Function ◽  
High Quality ◽  
Experimental Procedure ◽  
X Ray ◽  
Crystallographic Planes

CeO2thin films deposited on sapphire monocrystal substrates were used for an experimental study of the nature of extremely narrow overlapped maxima on X-ray diffraction ω scans. Full width at half-maximum (FWHM) values of such maxima typically reached the resolution function of the diffractometer. A comparative study of the influence of various diffractometer set-ups on the spectral characteristics of the X-ray beam in relation to the above-mentioned phenomenon was carried out. A surrounding (λmin− λmax) or (2θmin− 2θmax) of the strong substrate reflection was obtained, where a substrate contribution to an ω scan measured on thin-film reflection can be expected. Two possible origins of the narrow maxima are discussed: (a) a contribution of a part of the X-ray beam having λ ≠ λKαthat diffracts on a set of substrate crystallographic planes parallel to the thin-film crystallographic planes used for the ω-scan measurement; and (b) the presence in part of the thin film of a perfect monocrystal-like quality with practically no mosaicity. The principles of this approach and experimental procedure are reported, and on this basis it is possible to distinguish between the two possible origins of the narrow overlapped maxima. It is shown that under appropriate conditions, an extremely high quality CeO2thin film can be grown. The FWHM value of its ω scan can reach the value of diffractometer instrumental broadening obtained for a perfect monocrystal.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

X-RAY EVALUATION OF DEFORMATION BEHAVIOR OF SPUTTERED Cu THIN FILMS UNDER TENSILE LOADING

2012 ◽  
Vol 06 ◽  
pp. 497-502
Author(s):  
YOSHIAKI AKINIWA
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Grain Size ◽  
Deformation Behavior ◽  
Tensile Loading ◽  
Full Width ◽  
Half Maximum ◽  
Ray Method ◽  
X Ray ◽  
Target Power

Tensile tests were carried out for sputtered copper thin films. Thin films were fabricated by RF magnetron sputtering. The target power of the sputtering equipment was set from 10 to 150 W to control the grain size. The grain size increased with increasing target power. The effect of grain size on the deformation behavior under tensile loading was investigated by X-ray method. The changes in the internal stress and the full width at half maximum were measured under tensile loading. The 0.2% proof stress decreased with grain size. For the full width at half maximum, the value was almost constant in the elastic region. When the plastic deformation occurred, the value increased rapidly with applied strain. For the specimen with fine grains, the value returned to the initial value in spite of after large plastic deformation. After tensile loading, many intergranular cracks could be observed on the specimen surface.

Domain structure of epitaxial PbTiO3 films grown on vicinal (001) SrTiO3

1997 ◽  
Vol 12 (5) ◽  
pp. 1297-1305 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

Epitaxial PbTiO3 films have been grown on vicinal (001) SrTiO3 substrates by pulsed laser deposition. Vicinal SrTiO3 substrates with misorientations up to 9° from (001) were used, and the influence of the direction of misorientation on the resulting domain structure was studied. 4-circle x-ray diffraction analysis indicates that thin (40 nm) PbTiO3 films are completely c-axis oriented [rocking curve full-width-at-half-maximum (FWHM) of 0.25° for the 002 reflection] and that thicker films (∼ 200 nm) contain mixed a-axis and c-axis PbTiO3 domains due to twinning along {011} planes. The [100] axis of the a-axis domains is misoriented by 2.1° to 3.3° toward 〈100〉 substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (001) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented in an uphill direction with respect to the crystallographic miscut.

Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs

1988 ◽  
Vol 3 (6) ◽  
pp. 1144-1150 ◽  
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Full Width ◽  
Half Maximum ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas Substrates ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Cdte Films ◽  
The Relationship

Ultraviolet photon-induced metalorganic vapor phase epitaxy of CdTe films on GaAs substrates has been investigated using diethyltelluride and dimethylcadmium as the precursor gases. The relationship between the deposition parameters and the properties of the epilayers have been examined using transmission electron microscopy and x-ray rocking curves. Epilayers grown at 6μm/h show an x-ray double-crystal rocking curve full width at half-maximum (FWHM) of 250 arcsec.

Removal of 6H-SiC substrate influence when evaluating GaN thin film properties via x-ray

2001 ◽  
Vol 693 ◽  
Author(s):  
Edward A. Preble ◽  
Peter Q. Miraglia ◽  
Amy M. Roskowski ◽  
Sven Einfeldt ◽  
Robert F. Davis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layers ◽  
Film Properties ◽  
Rocking Curve ◽  
X Ray ◽  
Algan Buffer ◽  
Substrate Influence ◽  
Meaningful Data

AbstractNon-uniformity in GaN thin films deposited on 6H-SiC can make determining the effects of growth variables difficult. Results presented in this work show the effects of the SiC substrates on the GaN films, and how to correct for these effects to obtain meaningful data about the properties of the thin film rather than the substrate underneath. Rocking curve values of GaN thin films are found to track almost 1:1 with the values of the underlying SiC. Plotting rocking curves with respect to the substrate, as well as a variable of importance can therefore yield more meaningful and reliable comparisons instead of plotting the data for the variable alone. This procedure is used to demonstrate the effects of thickness and AlN and AlGaN buffer layers on GaN thin films.

scholarly journals Хлорид-гидридная газофазная эпитаксия полуполярного слоя AlN(1012) на наноструктурированной подложке Si(100)

2020 ◽  
Vol 46 (2) ◽  
pp. 12
Author(s):  
В.Н. Бессолов ◽  
М.Е. Компан ◽  
Е.В. Коненкова ◽  
В.Н. Пантелеев
Keyword(s):  
Hydride Vapor Phase Epitaxy ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Inclined Plane ◽  
New Approach ◽  
Rocking Curve ◽  
X Ray ◽  
Patterned Substrate ◽  
Maximum Value

A new approach is proposed to the synthesis of a semipolar AlN on a Si(100) substrate at the surface for which the angle between the inclined plane of the nanogrooves and Si(100) is 47°. It is shown that the hydride vapor-phase epitaxy on a such nano-patterned substrate enables formation of a semipolar layer AlN (1012) characterized by the full width at half maximum value as low as ωθ ~60 arcmin for the x-ray diffraction rocking curve. It is found that the Raman spectra of the semipolar AlN(10-12) layer contain additional peaks on the Raman curves associated with phonons A1(TO) and E1(TO), in contrast to the polar AlN(0001) layer, where the peak A1(LO) is additionally manifested.

Resolution of X-Ray Rocking Curve Measurements Made with Finite Counting Statistics

2015 ◽  
Vol 24 (03n04) ◽  
pp. 1550007 ◽  
Author(s):  
Tedi Kujofsa ◽  
John E. Ayers
Keyword(s):  
Peak Position ◽  
Bragg Angle ◽  
Full Width ◽  
Half Maximum ◽  
Peak Width ◽  
Effective Number ◽  
Rocking Curve ◽  
X Ray ◽  
Experimental Resolution ◽  
Counting Statistics

We have analyzed the strain resolution of x-ray rocking curve profiles from measurements of the peak position and peak width made with finite counting statistics. In this work, we have considered x-ray rocking curves which may be Gaussian or Lorentzian in character and have analyzed the influence of the effective number of counts, full-width-at-half-maximum (FWHM) and the Bragg angle on the resolution. Often experimental resolution values are estimated on the order of 10−5 whereas this work predicts more sensitive values (10−9) with smaller FWHM and larger effective counts and Bragg angles.

scholarly journals Influence of Interfacial Neighborhood on Residual Stress due to Deposition of TiN Thin Films Made by PVD

2005 ◽  
Vol 490-491 ◽  
pp. 601-606
Author(s):  
Hajime Hirose ◽  
Shinya Suzuki ◽  
Masahide Gotoh ◽  
Toshihiko Sasaki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Stress Measurement ◽  
X Rays ◽  
Full Width ◽  
Half Maximum ◽  
X Ray ◽  
Tin Thin Films

In depositing the TiN thin films to the substrate by Physical Vapor Deposition (PVD), it influences the substrate interface. Change of the residual stress and the full-width at half maximum (FWHM) in each process of the TiN deposition of thin film was measured by the X-ray stress measurement. As a result of the X-ray stress measurement, there are no changes in the residual stress and the FWHM. It is thought that there is a difference in the penetration depth to the substrate of X-rays and Ti ion.

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