Removal of 6H-SiC substrate influence when evaluating GaN thin film properties via x-ray

2001 ◽  
Vol 693 ◽  
Author(s):  
Edward A. Preble ◽  
Peter Q. Miraglia ◽  
Amy M. Roskowski ◽  
Sven Einfeldt ◽  
Robert F. Davis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layers ◽  
Film Properties ◽  
Rocking Curve ◽  
X Ray ◽  
Algan Buffer ◽  
Substrate Influence ◽  
Meaningful Data

AbstractNon-uniformity in GaN thin films deposited on 6H-SiC can make determining the effects of growth variables difficult. Results presented in this work show the effects of the SiC substrates on the GaN films, and how to correct for these effects to obtain meaningful data about the properties of the thin film rather than the substrate underneath. Rocking curve values of GaN thin films are found to track almost 1:1 with the values of the underlying SiC. Plotting rocking curves with respect to the substrate, as well as a variable of importance can therefore yield more meaningful and reliable comparisons instead of plotting the data for the variable alone. This procedure is used to demonstrate the effects of thickness and AlN and AlGaN buffer layers on GaN thin films.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

Accuracy and Reproducibility of X-ray Texture Measurements on Thin Films

2002 ◽  
Vol 721 ◽  
Author(s):  
Mark D. Vaudin ◽  
Glen R. Fox ◽  
Glen R. Kowach
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Full Width ◽  
Half Maximum ◽  
Rocking Curve ◽  
X Ray ◽  
Area Detector ◽  
Geometric Factors ◽  
Pt Films

AbstractRocking curve texture measurements were made on thin films of zinc oxide (ZnO) and platinum (Pt) using a powder x-ray diffractometer, and, in the case of ZnO, an area detector. The intensity corrections for defocussing and other geometric factors were made using a technique and associated software (Texture Plus*) developed at NIST. In both thin film systems, the texture was axisymmetric (fiber) and sharp, with full width at half maximum values of about 2.5°. Care was taken in the Pt case to ensure that the linear range of the x-ray detector was used to measure the intensities; for the ZnO data the degree of detector non-linearity was determined, and corrections were applied where necessary. The suitability of the Pt films for thin film texture standards was studied.

MBE Growth of Ferroelectric YMnO3 Thin Films on Si(111) Using Y2O3 Buffer Layers

1998 ◽  
Vol 541 ◽  
Author(s):  
Shogo Imada ◽  
Shigeto Shouriki ◽  
Eisuke Tokumitsu ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Ferroelectric Properties ◽  
High Energy ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Si Substrates

AbstractA ferroelectric YMnO3 thin films are grown on Si (111) substrates using Y2O3 buffer layers by molecular beam epitaxy (MBE). In-situ reflection high-energy electron diffraction (RHEED) analyses show that both Y2O3 and YMnO3 films are epitaxially grown on Si substrates. X-ray rocking curve measurements also show that the best FWHM (full width at half maximum) values for Y2O3 and YMnO3 films are 0.40° and 0.8°, respectively. C-V characteristics of Al/YMnO3/Y2O3/Si structures indicate the ferroelectric properties of YMnO3 films with a memory window of 0.7V.

Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO2/Si Substrate

2008 ◽  
Vol 600-603 ◽  
pp. 1289-1292 ◽  
Author(s):  
Gwiy Sang Chung ◽  
Tae Won Lee
Keyword(s):  
Thin Films ◽  
Intermediate Layer ◽  
Columnar Structure ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Ft Ir ◽  
System Characteristics ◽  
Sputtering System

Aluminum nitride thin films were deposited on polycrystalline 3C-SiC intermediate layer by pulsed reactive magnetron sputtering system. Characteristics of AlN/SiC structures were investigated experimentally by means of FE-SEM, AFM, X-ray diffraction, and FT-IR. The columnar structure of AlN thin films was observed by FE-SEM. The surface roughness of AlN films on 3C-SiC layer was measured using AFM. X-ray diffraction pattern of AlN films on SiC layers highly were oriented as (002). Full width of half maximum (FWHM) of the rocking curve around (002) reflections was 1.3°. It was determined from infrared absorbance spectrum that the residual stress of AlN thin films grown on SiC layers was almost free. The presented results show that AlN thin films on 3C-SiC buffer layers can be used for various applications.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

2019 ◽  
Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Design ◽  
Grazing Incidence ◽  
Crystallite Orientation ◽  
Miller Index ◽  
X Ray ◽  
X Ray Scattering ◽  
Orientation Distributions ◽  
Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

scholarly journals Optoelectronic properties of highly porous silver oxide thin film

2021 ◽  
Vol 3 (1) ◽  
Author(s):  
Ahmad Al-Sarraj ◽  
Khaled M. Saoud ◽  
Abdelaziz Elmel ◽  
Said Mansour ◽  
Yousef Haik
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Plasma Etching ◽  
Silver Oxide ◽  
Oxidation Time ◽  
Oxide Thin Film ◽  
X Ray ◽  
Porous Silver ◽  
Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

scholarly journals X-ray Photoelectron Spectroscopy Analysis of Chitosan–Graphene Oxide-Based Composite Thin Films for Potential Optical Sensing Applications

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 478
Author(s):  
Wan Mohd Ebtisyam Mustaqim Mohd Daniyal ◽  
Yap Wing Fen ◽  
Silvan Saleviter ◽  
Narong Chanlek ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Photoelectron Spectroscopy ◽  
Functional Group ◽  
Optical Sensing ◽  
Composite Thin Films ◽  
Cobalt Ions ◽  
X Ray ◽  
Sensing Applications

In this study, X-ray photoelectron spectroscopy (XPS) was used to study chitosan–graphene oxide (chitosan–GO) incorporated with 4-(2-pyridylazo)resorcinol (PAR) and cadmium sulfide quantum dot (CdS QD) composite thin films for the potential optical sensing of cobalt ions (Co2+). From the XPS results, it was confirmed that carbon, oxygen, and nitrogen elements existed on the PAR–chitosan–GO thin film, while for CdS QD–chitosan–GO, the existence of carbon, oxygen, cadmium, nitrogen, and sulfur were confirmed. Further deconvolution of each element using the Gaussian–Lorentzian curve fitting program revealed the sub-peak component of each element and hence the corresponding functional group was identified. Next, investigation using surface plasmon resonance (SPR) optical sensor proved that both chitosan–GO-based thin films were able to detect Co2+ as low as 0.01 ppm for both composite thin films, while the PAR had the higher binding affinity. The interaction of the Co2+ with the thin films was characterized again using XPS to confirm the functional group involved during the reaction. The XPS results proved that primary amino in the PAR–chitosan–GO thin film contributed more important role for the reaction with Co2+, as in agreement with the SPR results.

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