Ultraviolet photon-induced heteroepitaxy of CdTe on GaAs

1988 ◽  
Vol 3 (6) ◽  
pp. 1144-1150 ◽  
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Full Width ◽  
Half Maximum ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas Substrates ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Cdte Films ◽  
The Relationship

Ultraviolet photon-induced metalorganic vapor phase epitaxy of CdTe films on GaAs substrates has been investigated using diethyltelluride and dimethylcadmium as the precursor gases. The relationship between the deposition parameters and the properties of the epilayers have been examined using transmission electron microscopy and x-ray rocking curves. Epilayers grown at 6μm/h show an x-ray double-crystal rocking curve full width at half-maximum (FWHM) of 250 arcsec.

Defect Reduction in Cd1-xZnxTe Epilayers on GaAs Substrates

1994 ◽  
Vol 299 ◽  
Author(s):  
Saket Chadda ◽  
Kevin Malloy ◽  
John Reno
Keyword(s):  
Threading Dislocation ◽  
Full Width ◽  
X Ray Diffraction ◽  
Defect Reduction ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Optimum Period ◽  
Bulk Alloys

AbstractCd0.91Zn0.09Te/CdTe multilayers of various period thicknesses were inserted into Cd0.955Zn0.045Te bulk alloys grown on (001) GaAs. The net strain of the multilayer on the underlying Cd0.955Zn0.045Te was designed to be zero. X-ray diffraction full width at half maximum (FWHM) was used as a means to optimize the period thickness of the multilayer. Transmission electron microscopy of the optimum period thickness samples demonstrated four orders of magnitude decrease in the threading dislocation density. Mechanism of bending by equi-strained multilayers is discussed.

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves.

1986 ◽  
Vol 77 ◽  
Author(s):  
M. G. Burke ◽  
W. J. Choyke ◽  
N. J. Doyle ◽  
Z. C. Feng ◽  
M. H. Hanes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Milling ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Line Defects ◽  
Cdte Films ◽  
Means Of Transmission ◽  
Low Temperature Photoluminescence

ABSTRACTThe effects of chemical etching, mechanical thinning, and ion milling on the low temperature photoluminescence spectra of MBE grown (001) CdTe films are reported. Line defects observed by TEM are correlated with photoluminescence. It is shown that X-ray D.C.R.C, measurements in these films are weighted averages over the whole thickness of the films and therefore weakly reflect the structural perfection of the samples near the surface as deduced by photoluminescence.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

Accuracy and Reproducibility of X-ray Texture Measurements on Thin Films

2002 ◽  
Vol 721 ◽  
Author(s):  
Mark D. Vaudin ◽  
Glen R. Fox ◽  
Glen R. Kowach
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Full Width ◽  
Half Maximum ◽  
Rocking Curve ◽  
X Ray ◽  
Area Detector ◽  
Geometric Factors ◽  
Pt Films

AbstractRocking curve texture measurements were made on thin films of zinc oxide (ZnO) and platinum (Pt) using a powder x-ray diffractometer, and, in the case of ZnO, an area detector. The intensity corrections for defocussing and other geometric factors were made using a technique and associated software (Texture Plus*) developed at NIST. In both thin film systems, the texture was axisymmetric (fiber) and sharp, with full width at half maximum values of about 2.5°. Care was taken in the Pt case to ensure that the linear range of the x-ray detector was used to measure the intensities; for the ZnO data the degree of detector non-linearity was determined, and corrections were applied where necessary. The suitability of the Pt films for thin film texture standards was studied.

X-ray diffraction characterization of MOVPE ZnSe films deposited on (100) GaAs using conventional and high-resolution diffractometers

2009 ◽  
Vol 24 (2) ◽  
pp. 78-81 ◽  
Author(s):  
T. N. Blanton ◽  
C. L. Barnes ◽  
M. Holland ◽  
K. B. Kahen ◽  
S. K. Gupta ◽  
...  
Keyword(s):  
High Resolution ◽  
Phase Identification ◽  
Pin Diode ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sample Throughput ◽  
Gaas Substrates ◽  
Deposition Parameters

ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pin-diode LED applications. In this study, a conventional Bragg-Brentano diffractometer (BBD) has been used to screen samples for phase identification, crystallite size, presence of polycrystalline ZnSe, and initial rocking curve (RC) analysis. A limitation of the conventional diffractometer is that the smallest RC full width at half maximum (FWHM) that can be achieved is 500 to 600 arc sec. As deposition parameters are optimized and the RC limit of the conventional diffractometer is reached, analysis is moved to a four-bounce high-resolution diffractometer (HRD). Although more time for analysis is required, using the HRD has a RC resolution advantage, where RCs of <20 arc sec are obtained for neat GaAs wafers. Combining the BBD and HRD instruments for analysis of ZnSe films grown on GaAs substrates allows for an efficient means of high sample throughput combined with an accurate measurement of film alignment.

Insertion effect of the 3-nm-thick Co(Pt) layer on AlN preferred orientation and residual stress in the c-axis textured AlN film

2013 ◽  
Vol 1515 ◽  
Author(s):  
Takashi Harumoto ◽  
Shinji Muraishi ◽  
Ji Shi ◽  
Yoshio Nakamura ◽  
Takashi Ishiguro
Keyword(s):  
Residual Stress ◽  
Preferred Orientation ◽  
Two Dimensional ◽  
Full Width ◽  
Sensitive Detector ◽  
Rocking Curve ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Film ◽  
Sputter Deposited

ABSTRACTThe effect of the continuously inserted 3-nm-thick Co(Pt) layer on the preferred orientation of AlN film is investigated, and highly c-axis textured AlN film has been obtained. According to high resolution transmission electron microscope observations, the preferred orientation of sputter-deposited AlN film is improved from polycrystalline to (001) texture at the interface between AlN and Co(Pt)(111). The texture of AlN films are also examined using an x-ray diffractometer equipped with a two dimensional positive sensitive detector. The x-ray rocking curve full width at half maximum of 002AlN of (001) textured AlN with the Co(Pt) layer is 2.7°, and the residual stress of such specimen is 1.6 GPa in tensile stress.

Domain structure of epitaxial PbTiO3 films grown on vicinal (001) SrTiO3

1997 ◽  
Vol 12 (5) ◽  
pp. 1297-1305 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

Epitaxial PbTiO3 films have been grown on vicinal (001) SrTiO3 substrates by pulsed laser deposition. Vicinal SrTiO3 substrates with misorientations up to 9° from (001) were used, and the influence of the direction of misorientation on the resulting domain structure was studied. 4-circle x-ray diffraction analysis indicates that thin (40 nm) PbTiO3 films are completely c-axis oriented [rocking curve full-width-at-half-maximum (FWHM) of 0.25° for the 002 reflection] and that thicker films (∼ 200 nm) contain mixed a-axis and c-axis PbTiO3 domains due to twinning along {011} planes. The [100] axis of the a-axis domains is misoriented by 2.1° to 3.3° toward 〈100〉 substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (001) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented in an uphill direction with respect to the crystallographic miscut.

Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates

2002 ◽  
Vol 744 ◽  
Author(s):  
Ganesan Suryanarayanan ◽  
Anish A. Khandekar ◽  
Brian E. Hawkins ◽  
Thomas F. Kuech ◽  
Susan E. Babcock
Keyword(s):  
Electron Microscopy ◽  
Extended Defects ◽  
Double Crystal ◽  
Cross Sectional ◽  
Lateral Epitaxial Overgrowth ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Inas Thin Films

ABSTRACTThe microstructure of epitaxial InAs thin films grown by MOCVD on mask-patterned “LEO” (lateral epitaxial overgrowth) GaAs and on unpatterned GaAs substrates was studied using double-crystal x-ray diffraction, scanning electron microscopy and cross-sectional transmission electron microscopy. This paper describes the improvement in crystal quality (factor of 20 reduction in x-ray rocking curve width), the order of magnitude reduction in dislocation density, and the rearrangement of the remaining extended defects that were observed in the LEO material when compared to the film grown on the unpatterned wafer.

Studies of Crystalunity for Sputter Deposited Bi-Based Oxide Films

1992 ◽  
Vol 275 ◽  
Author(s):  
Koichi Mizuno ◽  
Yo Ichikawa ◽  
Kentaro Setsune
Keyword(s):  
Thin Films ◽  
Oxide Films ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Sputter Deposited

ABSTRACTCrystalline quality of Bi-based oxide films has been evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2Cu1O8-δ (BSCO) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO(100) and SrTiO3(100) substrates at the low temperature of 650°C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3(100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec).

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