Modeling the Diffusion-Controlled Growth of Needle and Plate-Shaped Precipitates

2002 ◽  
Vol 731 ◽  
Author(s):  
Z. Guo ◽  
W. Sha

AbstractVarious theories have been developed to describe the diffusion-controlled growth of precipitates with shapes approximating needles or plates. The most comprehensive one is due to Ivantsov, Horvay and Cahn, and Trivedi (HIT theory), where all the factors that may influence the precipitate growth, i.e. diffusion, interface kinetics and capillarity, are accounted for within one equation. However, HIT theory was developed based on assumptions that transformation strain/stress and interfacial free energy are isotropic, which are not true in most of the real systems. An improved growth theory of precipitates of needle and plate shapes was developed in the present study. A new concept, the compression ratio, was introduced to account for influences from the anisotropy of transformation strain/stress and interfacial free energy on the precipitate morphology. Experimental evidence supports such compression effect. Precipitate growth kinetics were quantified using this concept. The improved HIT theory (IHIT theory) was then applied to study the growth of Widmanstatten austenite in ferrite in Fe-C-Mn steels. The calculated results agree well with the experimental observations.

1994 ◽  
Vol 356 ◽  
Author(s):  
D. Josell ◽  
Z.L. Wang

AbstractExperiments were conducted on multilayer thin films to determine the free energies associated with silver/iron interfaces. Creep studies determined the loads for which the multilayers neither shrank nor stretched over time. Microstructural data was used with the zero creep loads in a model for grain boundary diffusion controlled creep in multilayers to determine the interfacial free energy.


Author(s):  
Wevernilson F. de Deus ◽  
Bruna M. de França ◽  
Josué Sebastian B. Forero ◽  
Alessandro E. C. Granato ◽  
Henning Ulrich ◽  
...  

2008 ◽  
Vol 23 (12) ◽  
pp. 3303-3308 ◽  
Author(s):  
Chien-Neng Liao ◽  
Ching-Hua Lee

Reactions of molten Sn–xCu (x = 0.05 to 1.0) alloys with Te substrate at 250 °C were investigated. A dosage of 0.1 wt% Cu in Sn is found to be effective in suppressing the vigorous Sn/Te reaction by forming a thin CuTe at the solder/Te interface. The CuTe morphology changes from irregular clusters into a layered structure with increasing Cu content in Sn. With the same reaction time, the CuTe thickness increases proportionally to the square root of Cu content in Sn–Cu alloys, suggesting a diffusion-controlled growth for CuTe.


2021 ◽  
Vol 314 ◽  
pp. 172-177
Author(s):  
Yuta Sasaki ◽  
Yousuke Hanawa ◽  
Masayuki Otsuji ◽  
Naozumi Fujiwara ◽  
Masahiko Kato ◽  
...  

Damage-free drying becomes increasingly difficult with the scaling of semiconductor devices. In this work, we studied a new sublimation drying technology for 3nm node and beyond. In order to investigate the collapse factor by conventional sublimation drying, we observed the pattern with cryo-SEM and revealed that the collapse occurred when the liquid film on the substrate solidified. Based on this result, we considered that it was important to deposit a solidified film uniformly from the substrate side to suppress collapse. Two key process parameters were evaluated to achieve the uniform formation of the solidified film. One is interfacial free energy and the other is film thickness of solution just before solidification. By optimizing two key parameters, it was successfully demonstrated to suppress pattern collapse of challenging devices. In this paper, we report on a new drying method: sublimation drying by LPD (Liquid-phase deposition).


Sign in / Sign up

Export Citation Format

Share Document