Direct Synthesis of Silicon Nanowires using Silane and Molten Gallium

2002 ◽  
Vol 737 ◽  
Author(s):  
Shashank Sharma ◽  
Mahendra K. Sunkara ◽  
Elizabeth C. Dickey
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Direct Synthesis ◽  
Growth Direction ◽  
Single Crystalline ◽  
Gas Phase Chemistry ◽  
Transmission Electron ◽  
Phase Chemistry ◽  
First Time ◽  
Low Solubility

ABSTRACTWe report for the first time, bulk synthesis of single crystalline silicon nanowires using molten gallium pools and an activated vapor phase containing silane. The resulting silicon nanowires were single crystalline with <100> growth direction. Nanowires contained an unexpectedly thin, non-uniform oxide sheath determined using high-resolution Transmission Electron Microscopy (TEM). Nanowires were tens of nanometers in diameter and tens to hundreds of microns long. The use of activated gas phase chemistry containing solute of interest over molten metal pools of low-solubility eutectics such as gallium offer a viable route to generate nanowire systems containing abrupt compositional hetero-interfaces.

A Novel TEM Technique for Characterizing As-Grown CVD Diamond Films

1991 ◽  
Vol 49 ◽  
pp. 956-957 ◽  
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Growth Direction ◽  
Dark Field ◽  
Growth Surface ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
First Time ◽  
Microstructural Studies

Microstructural studies by transmission electron microscopy (TEM) of diamond films grown by chemical vapor deposition (CVD) usually involve tedious specimen preparation. This process has been avoided with a technique that is described in this paper. For the first time, thick as-grown diamond films have been examined directly in a conventional TEM without thinning. With this technique, the important microstructures near the growth surface have been characterized. An as-grown diamond film was fractured on a plane containing the growth direction. It took about 5 min to prepare a sample. For TEM examination, the film was tilted about 30-45° (see Fig. 1). Microstructures of the diamond grains on the top edge of the growth face can be characterized directly by transmitted electron bright-field (BF) and dark-field (DF) images and diffraction patterns.

Self-diffusion in single crystalline silicon nanowires

2018 ◽  
Vol 123 (16) ◽  
pp. 161515 ◽  
Author(s):  
T. Südkamp ◽  
G. Hamdana ◽  
M. Descoins ◽  
D. Mangelinck ◽  
H. S. Wasisto ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Self Diffusion

Fabrication of Single-Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

2006 ◽  
Vol 16 (3) ◽  
pp. 387-394 ◽  
Author(s):  
K. Q. Peng ◽  
J. J. Hu ◽  
Y. J. Yan ◽  
Y. Wu ◽  
H. Fang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Metal Particles ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Catalytic Metal

Facile morphological control of single-crystalline silicon nanowires

2012 ◽  
Vol 258 (24) ◽  
pp. 9792-9799 ◽  
Author(s):  
Shao-long Wu ◽  
Ting Zhang ◽  
Rui-ting Zheng ◽  
Guo-an Cheng
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Morphological Control ◽  
Single Crystalline

scholarly journals Physical properties of iodate solutions and the deliquescence of crystalline I<sub>2</sub>O<sub>5</sub> and HIO<sub>3</sub>

2010 ◽  
Vol 10 (24) ◽  
pp. 12251-12260 ◽  
Author(s):  
R. Kumar ◽  
R. W. Saunders ◽  
A. S. Mahajan ◽  
J. M.C. Plane ◽  
B. J. Murray
Keyword(s):  
Water Activity ◽  
Temperature Dependent ◽  
Activity Data ◽  
Gas Phase Chemistry ◽  
Activity Density ◽  
Phase Chemistry ◽  
First Time ◽  
Measured Water ◽  
Complex Ion

Abstract. Secondary aerosol produced from marine biogenic sources in algal-rich coastal locations will initially be composed of iodine oxide species, most likely I2O5, or its hydrated form HIO3, formed as a result of iodine gas-phase chemistry. At present, there is no quantitative hygroscopic data for these compounds and very little data available for iodate solutions (HIO3 and I2O5 share a common aqueous phase). With increased interest in the role of such aerosol in the marine atmosphere, we have conducted studies of (i) the deliquescence behaviour of crystalline HIO3 and I2O5 at 273–303 K, (ii) the efflorescence behaviour of aqueous iodate solution droplets, and (iii) properties (water activity, density, and viscosity) of subsaturated and saturated iodate solutions. The deliquescence of I2O5 crystals at 293 K was observed to occur at a relative humidity (DRH) of 80.8±1.0%, whereas for HIO3, a DRH of 85.0±1.0% was measured. These values are consistent with measured water activity values for saturated I2O5 and HIO3 solutions at 293 K of 0.80±0.01 and 0.84±0.01 respectively. At all temperatures, DRH values for HIO3 crystals were observed to be higher than for those of I2O5. The temperature-dependent DRH data, along with solubility and water activity data were used to evaluate the enthalpy of solution (ΔHsol) for HIO3 and I2O5. A ΔHsol value of 8.3±0.7 kJ mol−1 was determined for HIO3 which is consistent with a literature value of 8.8 kJ mol−1. For I2O5, we report for the first time its solubility at various temperatures and ΔHsol = 12.4±0.6 kJ mol−1. The measured water activity values confirm that aqueous iodate solutions are strongly non-ideal, consistent with previous reports of complex ion formation and molecular aggregation.

Ti-Island-Catalyzed Si Nanowire Growth by Gas-Source MBE: Morphology and Twinning

2002 ◽  
Vol 728 ◽  
Author(s):  
Qiang Tang ◽  
Xian Liu ◽  
Theodore I. Kamins ◽  
Glenn S. Solomon ◽  
James S. Harris
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
High Energy ◽  
Growth Direction ◽  
Epitaxial Silicon ◽  
First Order ◽  
Gas Source ◽  
Transmission Electron ◽  
Gas Source Mbe

AbstractSilicon nanowires catalyzed by Ti islands have been grown by molecular beam epitaxy (MBE) using Si2H6 as the gas source and characterized by in situ reflection high-energy electron diffraction (RHEED), scanning-electron microscopy (SEM) and transmission-electron microscopy (TEM). Approximately one monolayer of Ti was deposited on Si(001) wafers, which, during annealing, reacted with silicon and formed TiSi2 islands. After annealing, but before Si growth, the stoichiometric TiSi2 (C49) phase was observed with RHEED.The silicon nanowires are typically between 20 and 40 nanometers in diameter and several hundred nanometers long. The nanowires changed their growth direction several times during growth, resulting in complex RHEED patterns, which can be matched very well by simulated RHEED patterns calculated assuming that the nanowires change their direction by twinning along (111) planes. RHEED patterns of epitaxial silicon nanowires, first-order twinned nanowires (twinned relative to the substrate orientation), second-order twinned nanowires (twinned relative to the first-order twin), and TiSi2 were observed.

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