Polymorphous silicon nanowires synthesized by plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 737 ◽  
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
H.W. Diao ◽  
Z.H. Hu ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
The Body ◽  
Si Nanowires ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

ABSTRACTPolymorphous Si nanowires (SiNWS) have been successfully synthesized on Si wafer by plasma enhanced chemical vapor deposition (PECVD) at 440°C, using silane as the Si source and Au as the catalyst. To grow the polymorphous SiNWS preannealing the Si substrate with Au film at 1100 °C is needed. The diameters of Si nanowires range from 15 to 100 nm. The structure, morphology and chemical composition of the SiNWS have been characterized by high resolution x-ray diffraction, scanning electron microscopy, transmission electron microscopy, as well as energy dispersive x-ray spectroscopy. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique.

scholarly journals Metal film deposition by laser breakdown chemical vapor deposition

1986 ◽  
Vol 1 (3) ◽  
pp. 420-424 ◽  
Author(s):  
T.R. Jervis ◽  
L.R. Newkirk
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

Understanding the Growth Mechanisms of Tin Oxide Nanowires by Chemical Vapor Deposition

2021 ◽  
Vol 21 (4) ◽  
pp. 2538-2544
Author(s):  
Nguyen Minh Hieu ◽  
Nguyen Hoang Hai ◽  
Mai Anh Tuan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Mapping ◽  
X Ray Diffraction ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Scanning Transmission

Tin oxides nanowires were prepared by chemical vapor deposition using shadow mask. X-ray diffraction indicated that the products were tetragonal having crystalline structure with lattice constants a = 0.474 nm and c = 0.318 nm. The high-resolution transmission electron microscopy revealed that inter planar spacing is 0.25 nm. The results chemical mapping in scanning transmission electron microscopy so that the two elements of Oxygen and Tin are distributed very homogeneously in nanowires and exhibit no apparent elements separation. A bottom-up mechanism for SnO2 growth process has been proposed to explain the morphology of SnO2 nanowires.

Synthesis of Crystalline C3N4 films and the new C-N Phases

1996 ◽  
Vol 441 ◽  
Author(s):  
Yan Chen ◽  
D. J. Johnson ◽  
R. H. Prince ◽  
Liping Guo ◽  
E. G. Wang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Hot Filament

AbstractCrystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN

1997 ◽  
Vol 482 ◽  
Author(s):  
E. L. Piner ◽  
N. A. El-Masry ◽  
S. X. Liu ◽  
S. M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Separation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

AbstractInGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.

Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate

2013 ◽  
Vol 205-206 ◽  
pp. 400-405
Author(s):  
Peter Zaumseil ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder ◽  
Bernd Tillack
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Strain State ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Nanostructured Si

One way to further increase performance and/or functionality of Si micro-and nanoelectronics is the integration of alternative semiconductors on silicon (Si). We studied the Ge/Si heterosystem with the aim to realize a Ge deposition free of misfit dislocations and with low content of other structural defects. Ge nanostructures were selectively grown by chemical vapor deposition on periodic Si nanoislands (dots and lines) on SOI substrate either directly or with a thin (about 10 nm) SiGe buffer layer. The strain state of the structures was measured by different laboratory-based x-ray diffraction techniques. It was found that a suited SiGe buffer improves the compliance of the Si compared to direct Ge deposition; plastic relaxation during growth can be prevented, and fully elastic relaxation of the structure can be achieved. Transmission electron microscopy confirms that the epitaxial growth of Ge on nanostructured Si is free of misfit dislocations.

Investigation on Carbonizing Behaviors of Nanometer-sized Cr2O3 Particles Dispersed on Alumina Particles by Metalorganic Chemical Vapor Deposition in Fluidized Bed

2005 ◽  
Vol 20 (8) ◽  
pp. 2154-2160 ◽  
Author(s):  
Hao-Tung Lin ◽  
Jow-Lay Huang ◽  
Wen-Tse Lo ◽  
Wen-Cheng J. Wei
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Graphite Furnace ◽  
Average Particle Size ◽  
Chemical Vapor ◽  
Average Particle ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alumina Particles

Nanoscaled Cr2O3 powder with an average particle size of 20–40 nm, coated on alumina particles, has been produced by means of chemical vapor deposition (CVD) in a fluidized chamber, using the pyrolysis of Cr(CO)6 precursor. Amorphous and crystalline Cr2O3 particles were obtained when the temperatures of the pyrolysis were 300 and 400 °C, respectively. To prepare nanoscaled Cr3C2 powder from the nanometer-sized Cr2O3, carbonizing behavior of the Cr2O3 particles was investigated. It was found that, when amorphous Cr2O3 powders were carbonized in graphite furnace at 1150 °C for 2 h in vacuum (10−3 Torr), the powder was transformed into Cr3C2, while the crystalline Cr2O3 was transformed into a mixture of Cr7C3 and Cr3C2. The examinations by x-ray diffraction, transmission electron microscopy, and energy dispersive spectroscopy confirmed the transformation of the nano-sized Cr3C2 powders. The results of thermogravimetry and differential thermal analysis indicated that the transformation temperature was ∼1089 °C for amorphous Cr2O3 and ∼1128 °C for crystalline Cr2O3.

Microstructures of diamond formed by plasma-assisted chemical vapor deposition

1990 ◽  
Vol 5 (7) ◽  
pp. 1480-1489 ◽  
Author(s):  
J. L. Kaae ◽  
P. K. Gantzel ◽  
J. Chin ◽  
W. P. West
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
General Characteristic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Surface Morphologies ◽  
Deposition Conditions

The microstructures of five different diamond films formed by plasma-assisted chemical vapor deposition have been studied by transmission electron microscopy. The films were selected for study based on differences in their surface morphologies. The preferred orientations inferred from the symmetries of the crystals observed on the surfaces of these films were consistent with those measured by x-ray diffraction. A general characteristic of all of the diamond film microstructures was stacking faults and microtwins on {111} planes, but the densities and the distributions of the defects varied widely among the films. The observations of microstructure indicate that when a crystal grows so that {100} facets are formed, stacking faults and microtwins are confined to regions near its boundaries, and when a crystal grows so that {111} facets are formed, stacking faults and microtwins are distributed throughout its volume. Under some deposition conditions the defects are confined to bands in the crystal, and coincidence of these defect bands with small steps on the crystal facets suggests that the steps may be caused by the intersection of the bands with the surface.

SYNTHESIS OF HIGH QUALITY CRYSTALLINE C-N FILMS ON SILICON

1996 ◽  
Vol 10 (12) ◽  
pp. 567-571 ◽  
Author(s):  
YAN CHEN ◽  
E.G. WANG ◽  
FENG CHEN ◽  
LIPING GUO
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Interfacial Layer ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Hot Filament ◽  
Microscopy Images

High quality crystalline C–N films have been synthesized via hot filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy images show that a high density of crystalline clusters has been achieved. The clusters are composed of small columnar crystals (20–200 nm across) with hexagonal facets. Energy dispersive X ray analysis indicates a relative nitrogen:carbon composition of 1.30–2.5. X ray diffraction results indicate the films composed of β- and α- C 3 N 4 phases. Together with transmission electron microscopy analyses, we suggest that an interfacial layer C 3−x Si x N 4 is formed between the silicon substrate and the crystalline carbonnitride films.

Synthesis of Carbon Onions with High Purity by Chemical Vapor Deposition

2013 ◽  
Vol 641-642 ◽  
pp. 43-46
Author(s):  
Lei Shan Chen ◽  
Cun Jing Wang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Carbon Materials ◽  
Catalyst Support ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Carbon Onions ◽  
Nano Carbon

Nano-carbon materials were synthesized by decomposing acetylene at 400 °C using iron supported on alumina as catalyst. The catalysts contain about 0.3 and 5.2 wt% iron. The products were refluxed in concentrated HCl at 80°C for 36 h in order to remove the catalyst support. The samples were examined by transmission electron microscopy and X-ray diffraction. The results show that carbon onions surrounding Fe3C core were obtained using the catalyst containing 0.3 wt% iron and these carbon onions had a structure of stacked graphitic fragments, with diameters in the range 15-50 nm.

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