Indium distribution inside quantum wells: The effect of growth interruption in MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
A. M. Sanchez ◽  
P. Ruterana ◽  
S. Kret ◽  
P. Dłużewski ◽  
G. Maciejewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Distribution ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Layer Growth ◽  
Growth Interruption ◽  
Resolution Electron ◽  
Microscopy Image

ABSTRACTQuantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with interruptions during the InxGa1-xN layer growth. The strain distribution is not homogeneous inside the quantum wells, and indium rich clusters can be observed. Areas with almost no indium concentration were observed corresponding to the growth interruption. A comparison with samples grown by metalorganic chemical vapor deposition is attempted.

Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
M. G. Cheong ◽  
K. S. Kim ◽  
C. S. Kim ◽  
R. J. Choi ◽  
H. S. Yoon ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Peak Position ◽  
Transmission Microscopy ◽  
Growth Interruption ◽  
Metalorganic Chemical

ABSTRACTOptical and structural properties of InGaN/GaN quantum wells having growth interruption were investigated using high-resolution x-ray diffraction, photoluminescence and transmission microscopy. InxGa1−xN/GaN (x>0.25) six pair quantum wells used in this study were grown on c- plane sapphire by metalorganic chemical vapor deposition. The growth interruption was carried out by closing the group-III metal organic sources before and after growth of InGaN quantum well layers. With increasing the interruption time, the quantum dot-like region and well thickness decreases due to indium re-evaporation or thermal etching effect. As a result, PL peak position is blue-shifted and intensity is reduced. The size and number of V-defect did not vary with interruption time. The interruption time is not directly related with formation of the defect. The V-defect in quantum wells originates at threading dislocations and inversion domain boundaries due to higher misfit strain.

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