Basic Study on High-density Ferroelectric Data Storage Using Scanning Nonlinear Dielectric Microscopy

2002 ◽  
Vol 748 ◽  
Author(s):  
Yoshiomi Hiranaga ◽  
Kenjiro Fujimoto ◽  
Yasuo Wagatsuma ◽  
Yasuo Cho ◽  
Atsushi Onoe ◽  
...  
Keyword(s):  
Data Storage ◽  
Scanning Probe Microscopy ◽  
High Density ◽  
Scanning Probe ◽  
Ferroelectric Polarization ◽  
Domain Formation ◽  
Basic Study ◽  
Polarization Distribution ◽  
Nonlinear Dielectric ◽  
Probe Microscopy

ABSTRACTScanning Nonlinear Dielectric Microscopy (SNDM) is the method for observing ferroelectric polarization distribution, and now, its resolution has become to the sub-nanometer order, which is much higher than other scanning probe microscopy (SPM) methods for the same purpose. Up to now, we have studied high-density ferroelectric data storage using this microscopy. In this study, we have conducted fundamental experiments of nano-sized inverted domain formation in LiTaO3 single, and successfully formed inverted dot array with the density of 1.5 Tbit/inch2.

Seek and Track-Follow for Scanning Probe Microscopy-Based Data Storage

2009 ◽  
Vol 45 (10) ◽  
pp. 3695-3698 ◽  
Author(s):  
Choong Woo Lee ◽  
Hyun Jae Kang ◽  
Chung Choo Chung ◽  
Hyo-Jin Nam
Keyword(s):  
Data Storage ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

High Density Charge Storage Memory with Scanning Probe Microscopy

1996 ◽  
Vol 35 (Part 1, No. 5A) ◽  
pp. 2764-2769 ◽  
Author(s):  
Ichiro Fujiwara ◽  
Sigeru Kojima ◽  
Jun'etsu Seto
Keyword(s):  
Scanning Probe Microscopy ◽  
High Density ◽  
Scanning Probe ◽  
Charge Storage ◽  
Probe Microscopy

The Role of Scanning Probe Microscopy in Drug Delivery Research

1996 ◽  
Vol 13 (3-4) ◽  
pp. 225-256 ◽  
Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams
Keyword(s):  
Drug Delivery ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Probe Microscopy

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

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