Study of Optical and Electrical Properties of Bismuth-Doped Copper Phthalocyanine Thin Films Grown by Thermal Co-Evaporation

2015 ◽  
Vol 1131 ◽  
pp. 49-52 ◽  
Author(s):  
Kitipong Mano ◽  
Narin Tammarugwattana ◽  
Navaphun Kayunkid ◽  
Chaloempol Saributr ◽  
Pitiporn Thanomngam ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
Carrier Mobility ◽  
Copper Phthalocyanine ◽  
Strong Dependence ◽  
Chemical Properties ◽  
Film Surface ◽  
Chemical Information

Bismuth-doped copper phthalocyanine (Bi-doped CuPc) thin films were grown by organic-source thermal co-evaporation under five different deposition rates. Morphological, optical and chemical properties of the doped-films were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of ITO/Bi-doped-CuPc/Al devices i.e. carrier mobility and carrier concentration were characterized by current-voltage and capacitance-voltage measurements. Morphology of the doped films shows strong dependence on preparation conditions, as clearly observed by features of film surface i.e surface grain size and roughness. Optical absorption spectra of all doping conditions provide regular three dominant α-phase peaks at 339, 620 and 695 nm corresponding to absorption from B-band and Q-band, respectively. Electrical properties exhibit the enhancement of the film conductivity due to increase of both carrier mobility and carrier concentration with higher Bi-doping level. Moreover, photoelectron analysis reveals chemical information of the metal dopant in the host material.

Study of Optical and Electrical Properties of Tin-Doped Magnesium Phthalocyanine Thin Films Grown by Thermal Co-Evaporation

2016 ◽  
Vol 848 ◽  
pp. 80-84
Author(s):  
Kitipong Mano ◽  
Narin Tammarugwattana ◽  
Navaphun Kayunkid ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
Carrier Mobility ◽  
Strong Dependence ◽  
Chemical Properties ◽  
Film Surface ◽  
Beta Phase ◽  
Tin Metal

The aim of this work is to investigate specific properties of tin-doped magnesium phthalocyanine (Sn-doped MgPc) thin films grown by thermal co-evaporation. Morphological, optical and chemical properties of the doped-films were characterized by atomic force microscopy (AFM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of ITO/Sn-doped-MgPc/Al devices such as carrier mobility and carrier concentration were extracted from current-voltage and capacitance-voltage measurements. Morphology of the doped films shows strong dependence on the existence of Sn in the doped films as clearly observed by changing of features of the film surface e.g. surface grain size and roughness. Optical absorption spectra of all conditions provide regular three dominant beta-phase peaks at 352, 640 and 691 nm corresponding to absorption from B-band and Q-band, respectively. The electrical properties obtained from ITO/Sn-doped MgPc/Al device suggest that the enhancement of the current flow in the doped device is a result from the increase of both carrier mobility and carrier concentration. Moreover, photoelectron analysis reveals two formations of Sn dopant in MgPc those are tin metal and derivative of tin oxide.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

Growth and Characterizations of Tin-Doped on Nickel-Phthalocyanine as a Novel Nanomaterial

2015 ◽  
Vol 1131 ◽  
pp. 39-42
Author(s):  
Narin Tammarugwattana ◽  
Kitipong Mano ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Navaphun Kayunkid ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
Doping Concentration ◽  
Charge Carrier Concentration ◽  
Sn Doping ◽  
Nickel Phthalocyanine ◽  
Β Phase

Tin-doped nickel phthalocyanine thin films (Sn-doped NiPc) were deposited by thermal co-evaporation method. Doping concentration of tin in NiPc was controlled via different deposition rates between metal dopent and host organic material. Properties of the thin films doped by tin in the range of 3 to 15% were characterized by atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), UV-Visible spectroscopy and X-ray photoelectron spectroscopy (XPS). Furthermore, electrical properties of Al/Sn-doped-NiPc/ITO devices i.e. charge carrier concentration and carrier mobility were characterized by current-voltage and capacitance-voltage measurements. Microscopic results show clear evidence of the morphological transition from granular structure in undoped-film to rod-liked structure in the films doped more than 5%. Moreover, surface grain size exhibits the tendency to decrease with the increase of doping concentration. Optical properties reveal that the packing of NiPc molecules in all doping conditions is the combination of α-phase (majority) and β-phase (minority). However, evolution of β-phase NiPc is observed with the increase of doping concentration. Photoelectron analyses indicate shift of binding energy in both Ni2p and Sn3d levels corresponding to charge transfer between nickel-core and tin dopant. In addition, the electrical properties show the enhancement of the film’s conductivity due to the increase of charge carrier concentration with the higher Sn-doping level.

Study on Optical and Electrical Properties of Bismuth-Doped Nickel-Phthalocyanine Thin Films

2016 ◽  
Vol 848 ◽  
pp. 95-98
Author(s):  
Narin Tammarugwattana ◽  
Kitipong Mano ◽  
Kraisak Watthanarungsarit ◽  
Adirek Rangkasikorn ◽  
Navaphun Kayunkid ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Carrier Mobility ◽  
Charge Carrier Concentration ◽  
Optical And Electrical Properties ◽  
Nickel Phthalocyanine ◽  
Β Phase

The objective of this work is to investigate the optical and electrical properties of bismuth-doped nickel-phthalocyanine thin films (Bi-doped NiPc). The doped films were prepared by thermal co-evaporation as a function of Bi concentration. The amount of Bi in NiPc was controlled via different deposition rates between metal dopant and organic host. The optical properties of the hybrid films were characterized by spectroscopic techniques. Furthermore, the electrical properties e.g. charge carrier concentration and carrier mobility of Al/Bi-doped-NiPc/ITO devices were characterized by current-voltage and capacitance-voltage measurements. The results of optical properties suggest that the crystalline packing of NiPc molecules in all preparation conditions is a combination of α-phase (majority) and β-phase (minority). However, the evolution of β-phase NiPc is observed with the increase of metal doping concentration. Raman spectroscopic results reveal that there is no chemical bond taken place between Bi and NiPc. In addition, with increasing dopant concentration, electrical properties present the enhancement of conducting current of hybrid devices as result from the increment of both charge carrier concentration and charge carrier mobility.

Development of the Structural, Optical, and Electrical Properties of PEDOT:PSS Conducting Polymer Thin Film for Energy Applications

2021 ◽  
Vol 902 ◽  
pp. 65-70
Author(s):  
Samar Aboulhadeed ◽  
Mohsen Ghali ◽  
Mohamad M. Ayad
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Conducting Polymer ◽  
Film Surface ◽  
Volume Ratio ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Energy Applications

We report on a development of the structural, optical and electrical properties of poly (3,4-ethylenedioxythiophene)-poly (styrenesulfonate) (PEDOT:PSS) conducting polymer thin films. The PEDOT:PSS thin films were deposited by a controlled thin film applicator and their physical properties were found to be effectively modified by isopropanol. The deposited films were investigated by several techniques including XRD, UV–Vis, SPM and Hall-effect. Interestingly, by optimizing the PEDOTS:PSS/ISO volume ratio (v:v), we find that the film charge carriers type can be switched from p to n-type with a high bulk carriers concentration reaching 6×1017 cm-3. Moreover, the film surface roughness becomes smoother and reaching a small value of only 1.9 nm. Such development of the PEDOT:PSS film properties makes it very promising to act as an electron transport layer for different energy applications.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Growth and Characterizations of Indium-Doped Pentacene Thinfilm Prepared by Thermal Co-Evaporation as a Novel Nanomaterial

2015 ◽  
Vol 1131 ◽  
pp. 35-38
Author(s):  
Navaphun Kayunkid ◽  
Annop Chanhom ◽  
Chaloempol Saributr ◽  
Adirek Rangkasikorn ◽  
Jiti Nukeaw
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Charge Carrier Mobility ◽  
Electrical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Vis Spectroscopy ◽  
Hybrid Thin Films

This research is related to growth and characterizations of indium-doped pentacene thin films as a novel hybrid material. Doped films were prepared by thermal co-evaporation under high vacuum. The doping concentration was varied from 0% to 50% by controlling the different deposition rate between these two materials while the total thickness was fixed at 100 nm. The hybrid thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and UV-Visible spectroscopy to reveal the physical and optical properties. Moreover, the electrical properties of ITO/indium-doped-pentacene/Al devices i.e. charge mobility and carrier concentration were determined by considering the relationship between current-voltage and capacitance-voltage. AFM results identify that doping of indium into pentacene has an effect on surface properties of doped films i.e. the increase of surface grain size. XRD results indicate that doping of metal into pentacene has an effect on preferential orientation of pentacene’s crystalline domains. UV-Vis spectroscopy results show evolution of absorbance at photon energy higher than 2.7 eV corresponding to absorption from oxide of indium formed in the films. Electrical measurements exhibit higher conductivity in doped films resulting from increment of both charge carrier mobility and carrier concentration. Furthermore, chemical interactions taken place inside the doped films were investigated by x-ray photoelectron spectroscopy (XPS) in order to complete the remaining questions i.e. how do indium atoms interact with the neighbor molecules?, what is the origin of the absorption at E > 2.7 eV? Further results and discussions will be presented in the publication.

X-ray Photoelectron Spectroscopy characterization of native and RCA-treated Si (111) substrates and their influence on surface chemistry of copper phthalocyanine thin films

2010 ◽  
Vol 518 (10) ◽  
pp. 2688-2694 ◽  
Author(s):  
M. Krzywiecki ◽  
L. Grządziel ◽  
H. Peisert ◽  
I. Biswas ◽  
T. Chassé ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Chemistry ◽  
Photoelectron Spectroscopy ◽  
Copper Phthalocyanine ◽  
X Ray

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

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