Fabrication of carbon dioxide gas sensor and its alarm system using indium tin oxide (ITO) thin films

1994 ◽  
Vol 21 (3) ◽  
pp. 193-197 ◽  
Author(s):  
N.G. Patel ◽  
K.K. Makhija ◽  
C.J. Panchal



Author(s):  
Emerson Roberto Santos ◽  
Thiago de Carvalho Fullenbach ◽  
Marina Sparvoli Medeiros ◽  
Luis da Silva Zambom ◽  
Roberto Koji Onmori ◽  
...  

Transparent conductive oxides (TCOs) known as indium tin oxide (ITO) and fluorine tin oxide (FTO) deposited on glass were compared by different techniques and also as anodes in organic light-emitting diode (OLED) devices with same structure. ITO produced at laboratory was compared with the commercial one manufactured by different companies: Diamond Coatings, Displaytech and Sigma-Aldrich, and FTO produced at laboratory was compared with the commercial one manufactured by Flexitec Company. FTO thin films produced at laboratory presented the lowest performance measured by Hall effect technique and also by I-V curve of OLED device with low electrical current and high threshold voltage. ITO thin films produced at laboratory presented elevated sheet resistance in comparison with commercial ITOs (approximately one order of magnitude greater), that can be related by a high number of defects as discontinuity of the chemical lattice or low crystalline structure. In the assembly of OLED devices with ITO and FTO produced at laboratory, neither presented luminances. ITO manufactured by Sigma-Aldrich company presented better electrical and optical characteristics, as low electrical resistivity, good wettability, favorable transmittance, perfect physicalchemical stability and lowest threshold voltage (from 3 to 4.5 V) for OLED devices.



2010 ◽  
Vol 57 (6(1)) ◽  
pp. 1794-1798 ◽  
Author(s):  
Jong-Woong Kim ◽  
Jangwoo Choi ◽  
Sung-Jei Hong ◽  
Jeong-In Han ◽  
Young-Sung Kim


2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.



2017 ◽  
Vol 2017 ◽  
pp. 1-7 ◽  
Author(s):  
A. M. H. R. Hakimi ◽  
F. Schoofs ◽  
M. G. Blamire ◽  
S. Langridge ◽  
S. S. Dhesi

The effects of high-temperature annealing on ferromagnetic Co-doped Indium Tin Oxide (ITO) thin films have been investigated using X-ray diffraction (XRD), magnetometry, and X-Ray Magnetic Circular Dichroism (XMCD). Following annealing, the magnetometry results indicate the formation of Co clusters with a significant increase in the saturation magnetization of the thin films arising from defects introduced during cluster formation. However, sum rule analysis of the element-specific XMCD results shows that the magnetic moment at the Co sites is reduced after annealing. The effects of annealing demonstrate that the ferromagnetism observed in the as-deposited Co-doped ITO films arises from intrinsic defects and cannot be related to the segregation of metallic Co clusters.







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