Mim Capacitors with HfO2 and HfAlOx for Si RF and Analog Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Xiongfei Yu ◽  
Chunxiang Zhu ◽  
Hang Hu ◽  
Albert Chin ◽  
M.F. Li ◽  
...  
Keyword(s):  
Leakage Current ◽  
Low Loss ◽  
Small Frequency ◽  
Capacitance Density ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Al2o3 Concentration ◽  
Silicon Analog ◽  
Mim Capacitors

AbstractThe MIM capacitors with HfO2 and HfAlOx are investigated for Si RF and analog applications. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. A high capacitance density of 13 fF/μm2with a low leakage current and a VCC of 607 ppm/V is obtained for 10 nm HfO2 MIM capacitor, which can meet the requirement of the ITRS roadmap by 2007 for silicon RF application. On the other hand, it was found that both the capacitance density and voltage coefficients of capacitance (VCC) values of the HfAlOx MIM capacitors decrease with increasing Al2O3 concentration. The results show that HfAlOx MIM capacitor with an Al2O3 mole fraction of 0.14 is optimized. It provides a high capacitance density of 3.5 fF/μm2 and a low VCC of μ140 ppm/V2. Also, small frequency dependence, low leakage current, and low loss tangent are obtained. Thus, the HfAlOx MIM capacitor with an Al2O3 mole ratio of 0.14 is very suitable for use in silicon analog applications.

Metal-insulator-metal capacitor with high capacitance density and low leakage current using ZrTiO4 film

2009 ◽  
Vol 95 (11) ◽  
pp. 113502 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Bo-Yu Chen ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Min-Lin Wu
Keyword(s):  
Leakage Current ◽  
Metal Insulator ◽  
Capacitance Density ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Metal Insulator Metal

High-Performance MIM Capacitors based on TiO2/ZrO2/TiO2 and AlO-doped TiO2/ZrO2/TiO2 Dielectric Stacks for DRAM Applications

2013 ◽  
Vol 1561 ◽  
Author(s):  
Revathy Padmanabhan ◽  
Navakanta Bhat ◽  
S. Mohan ◽  
Y. Morozumi ◽  
Sanjeev Kaushal
Keyword(s):  
Leakage Current ◽  
High Performance ◽  
Constant Current ◽  
Barrier Heights ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Device Reliability ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTMetal-insulator-metal (MIM) capacitors for DRAM applications have been realized using TiO2/ZrO2/TiO2 (TZT) and AlO-doped TZT (TZAZT and TZAZAZT) dielectric stacks. High capacitance densities of about 46.6 fF/μm2 (for TZT stacks), 46.2 fF/μm2 (for TZAZT stacks), and 46.8 fF/μm2 (for TZAZAZT stacks) have been achieved. Low leakage current densities of about 4.9×10−8 A/cm2, 5.5×10−9 A/cm2, and 9.7×10−9 A/cm2 (at -1 V) have been obtained for TZT, TZAZT, and TZAZAZT stacks, respectively. We analyze the leakage current mechanisms at different electric field regimes, and compute the barrier heights. The effects of constant current stress and constant voltage stress on the device characteristics are studied, and excellent device reliability is demonstrated. We compare the device performance of the fabricated capacitors with other stacked high-k MIM capacitors reported in recent literature.

Material and Electrical Characterization of HfO2 Films for MIM Capacitors Application

2003 ◽  
Vol 766 ◽  
Author(s):  
Hang Hu ◽  
Chunxiang Zhu ◽  
Y. F. Lu ◽  
Y. H. Wu ◽  
T. Liew ◽  
...  
Keyword(s):  
High Performance ◽  
Analog Circuit ◽  
Electrical Characterization ◽  
Capacitance Density ◽  
Force Microscopy ◽  
Low Leakage ◽  
Atomic Force ◽  
Low Leakage Current ◽  
Metal Insulator Metal ◽  
Mim Capacitors

AbstractThin films of HfO2 high-κ dielectric have been prepared by pulsed-laser deposition (PLD) at various deposition conditions. X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectroscopy (SIMS) were used to characterize the deposited films. Experimental results show that substrate temperature has little effect on the stoichiometry, while deposition pressure plays an important role in determining the ratio of Hf and O. The electrical properties of HfO2 Metal-Insulator-Metal (MIM) capacitors were investigated at various deposition temperatures. It is shown that the HfO2 (56 nm) MIM capacitor fabricated at 200 oC shows an overall high performance, such as a high capacitance density of ∼3.0 fF/νm2, a low leakage current of 2x10-9 A/cm2 at 3 V, etc. All these indicate that the HfO2 MIM capacitors are very suitable for use in Si analog circuit applications.

High Density and Low Leakage Current in $ \hbox{TiO}_{2}$ MIM Capacitors Processed at 300 $^{\circ} \hbox{C}$

2008 ◽  
Vol 29 (8) ◽  
pp. 845-847 ◽  
Author(s):  
C. H. Cheng ◽  
S. H. Lin ◽  
K. Y. Jhou ◽  
W. J. Chen ◽  
C. P. Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Density ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Mim Capacitors

MIM Capacitors Using ALD Al2O3 for RF IC and DRAM Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
Sung Yong Ko ◽  
Jung Ik Oh ◽  
Joung Cheul Choi ◽  
Kang Hee Lee ◽  
Young Ho Bae ◽  
...  
Keyword(s):  
Leakage Current ◽  
Coplanar Waveguide ◽  
Atomic Layer ◽  
Good Reliability ◽  
Voltage Coefficient ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Mim Capacitors

ABSTRACTMetal-insulator-metal (MIM) capacitors were fabricated in a coplanar waveguide type using the Al2O3 thin film. The Al2O3 film was grown by atomic layer deposition(ALD) using Methyl-Pyrolidine-Tri-Methyl-Aluminum (MPTMA) and H2O on Ti. The capacitance per unit area of the fabricated MIM capacitor was 0.229 μF/cm2. And it had lower voltage coefficient of capacitance (VCC) and lower leakage current than that of Al2O3 MIM capacitor prepared by Al oxidation and Si3N4 MIM capacitor prepared by PECVD respectively. The fabricated Al2O3 MIM capacitors prepared by ALD exhibited low VCC, low leakage current, small frequency-dependent capacitance reduction, low temperature coefficient of capacitance (TCC) and good reliability. The characteristics of the device were suitable for RF ICs and DRAM.

Back-End Integrable On-Chip MIM Decoupling Capacitors Featuring High Capacitance With Ultra-Low Leakage Current by Nitrogen-Incorporated HfZrOx

2019 ◽  
Vol 18 ◽  
pp. 532-535 ◽  
Author(s):  
Kuen-Yi Chen ◽  
Teng-Chuan Chen ◽  
Ruei-Wen Kao ◽  
Yan-Xiao Lin ◽  
Kuan-Ying Hsieh ◽  
...  
Keyword(s):  
Leakage Current ◽  
Decoupling Capacitors ◽  
High Capacitance ◽  
Low Leakage ◽  
Low Leakage Current ◽  
On Chip

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current
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