Gated Nonlinear Transport in Organic Thin Film Transistors
Keyword(s):
AbstractCharge transport in poly(3-hexylthiophene) field effect transistors has been studied in a series of devices with channel lengths ranging from 3 μm down to 200 nm over a broad range of temperatures and gate voltages. We report gate-modulated highly nonlinear transport at temperatures below ∼200 K that is consistent in form with a Poole-Frenkel-like hopping mechanism in the space charge limited current regime. There is also consistency between this behavior and the hypothesis that density of localized states is strongly energy dependent. We also observe what appears to be a crossover from thermally activated to nonthermal hopping below 30 K.
2008 ◽
Vol 80
(11)
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pp. 2231-2240
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2018 ◽
Vol 29
(21)
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pp. 17975-18010
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2011 ◽
Vol 20
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pp. 727-748
2016 ◽
Vol 16
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pp. 3219-3222
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