Emission of Rare Earth Ions Incorporated into Metal Oxide Thin Films and Fibres

2003 ◽  
Vol 796 ◽  
Author(s):  
Ilmo Sildos ◽  
Sven Lange ◽  
Tanel Tätte ◽  
Valter Kiisk ◽  
M. Kirm ◽  
...  
Keyword(s):  
Thin Films ◽  
Radiative Recombination ◽  
Sol Gel ◽  
Atomic Layer ◽  
Rare Earth Ions ◽  
Metal Oxide Thin Films ◽  
Layer Deposition ◽  
Doped Materials ◽  
Excitonic States

ABSTRACTPhotoluminescence (PL) of undoped and Sm-doped TiO2, ZrO2 and HfO2 thin films and fibers was investigated at temperatures ranging from 6 to 300 K. The thin films were grown by the atomic layer deposition (ALD) technique and doped by using the ion implantation method. The fibers were prepared by using the sol-gel method whereas an in-situ doping was used to obtain the required concentration of Sm3+ ions in the films. In undoped as well as doped materials, PL was efficiently excited via band-to-band transitions. The emission of undoped materials was attributed to the radiative recombination of self-trapped excitons (STE). In doped materials, intense emission of Sm3+ was recorded. It is proposed, that there exists a concurrence between the radiative recombination of bound excitonic states and the energy transfer to Sm3+ ions, particularly at lower temperatures.

scholarly journals Author Correction: Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Ufuk Kilic ◽  
Alyssa Mock ◽  
Derek Sekora ◽  
Simeon Gilbert ◽  
Shah Valloppilly ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
Surface Interactions ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Layer Deposition

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

2007 ◽  
Vol 7 (11) ◽  
pp. 3758-3764
Author(s):  
Byoung H. Lee ◽  
Myung M. Sung
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Microcontact Printing ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Si Substrates ◽  
Layer Deposition ◽  
Assembled Monolayers

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing

2007 ◽  
Vol 7 (11) ◽  
pp. 3758-3764 ◽  
Author(s):  
Byoung H. Lee ◽  
Myung M. Sung
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Microcontact Printing ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Si Substrates ◽  
Layer Deposition ◽  
Assembled Monolayers

We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

Atomic layer deposition of metal-oxide thin films on cellulose fibers

2018 ◽  
Vol 71 (11-13) ◽  
pp. 2043-2052 ◽  
Author(s):  
Ortal Lidor-shalev ◽  
Yacov Carmiel ◽  
Nikolaos Pliatsikas ◽  
Panos Patsalas ◽  
Yitzhak Mastai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Cellulose Fibers ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Layer Deposition

Interval Annealing During Alternating Pulse Deposition

2004 ◽  
Vol 811 ◽  
Author(s):  
J.F. Conley ◽  
D.J. Tweet ◽  
Y. Ono ◽  
G. Stecker
Keyword(s):  
Thin Films ◽  
Interfacial Layer ◽  
Bulk Material ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Equivalent Thickness ◽  
Layer Deposition ◽  
Pulse Deposition ◽  
Post Deposition

AbstractThin films deposited via atomic layer deposition at low temperature tend to be less dense than bulk material and typically require high temperature post deposition annealing for densification and removal of unreacted precursor ligands. We have found that improved film densification can be achieved by interval annealing, in which in-situ moderate temperature (∼420°C) rapid thermal anneals are performed after every n deposition cycles. HfO2 film density and refractive index were found to increase with decreasing anneal interval (more frequent annealing). The highest density films could be achieved only by every-cycle annealing and could not be achieved by post deposition annealing. The densified every cycle annealed films have been shown to have improved equivalent thickness and leakage and decreased interfacial layer thickness.

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