A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

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17 Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

Electronics Letters ◽

10.1049/el:19960253 ◽

1996 ◽

Vol 32 (4) ◽

pp. 393 ◽

Cited By ~ 5

Author(s):

M. Yoneyama ◽

E. Sano ◽

S. Yamahata ◽

Y. Matsuoka ◽

M. Yaita

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Decision Circuit

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Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

Journal of Applied Physics ◽

10.1063/5.0054197 ◽

2021 ◽

Vol 130 (3) ◽

pp. 034502

Author(s):

Xin Wen ◽

Akshay Arabhavi ◽

Wei Quan ◽

Olivier Ostinelli ◽

Chhandak Mukherjee ◽

...

Keyword(s):

Performance Prediction ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Thz Applications

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Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors

IEEE Electron Device Letters ◽

10.1109/led.2009.2030373 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1119-1121 ◽

Cited By ~ 8

Author(s):

Shyh-Chiang Shen ◽

Yi-Che Lee ◽

Hee-Jin Kim ◽

Yun Zhang ◽

Suk Choi ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction ◽

Surface Leakage

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Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

MRS Proceedings ◽

10.1557/proc-833-g3.7 ◽

2004 ◽

Vol 833 ◽

Author(s):

Byoung-Gue Min ◽

Jong-Min Lee ◽

Seong-Il Kim ◽

Chul-Won Ju ◽

Kyung-Ho Lee

Keyword(s):

Heterojunction Bipolar Transistors ◽

Silicon Oxide ◽

Surface Recombination ◽

Surface States ◽

Bipolar Transistors ◽

Base Layer ◽

Current Gain ◽

Device Structure ◽

Double Heterojunction ◽

Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

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Erratum: “Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors” [Appl. Phys. Lett. 98, 242103 (2011)]

Applied Physics Letters ◽

10.1063/1.4816966 ◽

2013 ◽

Vol 103 (4) ◽

pp. 049903

Author(s):

K. Y. Donald Cheng ◽

C. C. Liao ◽

H. Xu ◽

K. Y. Norman Cheng ◽

M. Feng

Keyword(s):

Heterojunction Bipolar Transistors ◽

Electron Injection ◽

Bipolar Transistors ◽

Type I ◽

Hot Electron ◽

Hot Electron Injection ◽

Double Heterojunction ◽

Injection Effect

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InP double heterojunction bipolar transistors for terahertz computed tomography

AIP Advances ◽

10.1063/1.5039331 ◽

2018 ◽

Vol 8 (8) ◽

pp. 085320

Author(s):

Dominique Coquillat ◽

Alexandre Duhant ◽

Meriam Triki ◽

Virginie Nodjiadjim ◽

Agnieszka Konczykowska ◽

...

Keyword(s):

Computed Tomography ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Double Heterojunction

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High-speed, high-breakdown voltage InP/InGaAs double heterojunction bipolar transistors grown by MOMBE

10.1109/drc.1993.1009590 ◽

2005 ◽

Author(s):

Hin-Fai Chau ◽

E.A. Beam

Keyword(s):

Breakdown Voltage ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Bipolar Transistors ◽

High Breakdown Voltage ◽

Double Heterojunction

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Study on Possible Double Peaks in Cutoff Frequency Characteristics of AlGaAs/GaAs HBTs by Energy Transport Simulation

VLSI Design ◽

10.1155/1998/23740 ◽

1998 ◽

Vol 8 (1-4) ◽

pp. 437-442

Author(s):

T. Okada ◽

K. Horio

Keyword(s):

Heterojunction Bipolar Transistors ◽

Energy Transport ◽

Transport Model ◽

Cutoff Frequency ◽

Bipolar Transistors ◽

Electron Velocity ◽

Collector Current ◽

Double Peak ◽

Double Peaks ◽

Energy Profiles

By using an energy transport model, we simulate cutoff frequency fT versus collector current density IC characteristics of npn−n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n−-collector thickness and n−-doping densities. It is found that the calculated fT characteristics show double peak behavior when the n−- layer is thick enough and the n−-doping is high enough to allow existence of neutral n−- region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher IC) which is not usually reported experimentally.

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