Plasticity of decagonal Al73Ni10Co17 quasicrystals

2003 ◽  
Vol 805 ◽  
Author(s):  
Peter Schall ◽  
Michael Feuerbacher ◽  
Knut Urban

ABSTRACTWe present a study of the deformation mechanism of decagonal Al73Ni10Co17 quasicrystals by means of transmission electron microscopy. We performed compression tests on single-quasicrystalline samples in three different orientations: with the compression axis parallel to, inclined by 45 ° and perpendicular to the tenfold axis of the decagonal quasicrystal. The deformed samples reveal characteristic orientation-dependent dislocation structures leading us to the conclusion that fundamentally different deformation mechanisms are involved in plastic deformation in the three deformation geometries. We explicitly identified the Burgers vectors of the dislocations as interatomic vectors in the structure of decagonal Al-Ni-Co.

Author(s):  
J. Cadoz ◽  
J. Castaing ◽  
J. Philibert

Plastic deformation of alumina has been much studied; basal slip occurs and dislocation structures have been investigated by transmission electron microscopy (T.E.M.) (1). Non basal slip has been observed (2); the prismatic glide system <1010> {1210} has been obtained by compression tests between 1400°C and 1800°C (3). Dislocations with <0110> burgers vector were identified using a 100 kV microscope(4).We describe the dislocation structures after prismatic slip, using high voltage T.E.M. which gives much information.Compression tests were performed at constant strainrate (∿10-4s-1); the maximum deformation reached was 0.03. Thin sections were cut from specimens deformed at 1450°C, either parallel to the glide plane or perpendicular to the glide direction. After mechanical thinning, foils were produced by ion bombardment. Details on experimental techniques can be obtained through reference (3).


1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.


1981 ◽  
Vol 67 (1) ◽  
pp. 217-232 ◽  
Author(s):  
G. van Tendeloo ◽  
F. J. A. den Broeder ◽  
S. Amelinckx ◽  
R. de Ridder ◽  
J. van Landuyt ◽  
...  

1998 ◽  
Vol 540 ◽  
Author(s):  
N. Baluc ◽  
Y. Dai ◽  
M. Victoria

AbstractSingle crystalline specimens of pure Pd have been irradiated at ambient temperature with 590 MeV protons to doses ranging between 10−4 and 10−1 dpa. Tensile deformation experiments revealed that irradiation induces hardening and embrittlement, while scanning (SEM) and transmission electron microscopy (TEM) observations showed that plastic deformation of specimens irradiated to a dose ≥ 10−2 dpa is strongly localized and yields the creation of slip bands at the macroscopic scale and of defect-free channels at the microscopic level.


Sign in / Sign up

Export Citation Format

Share Document