Compositional control and structural properties of ZnSe1-xTex epitaxial films on lattice- matched InGaAs/InP (001) by photoassisted Metal Organic Vapor Phase Expitaxy (MOVPE)

2004 ◽  
Vol 819 ◽  
Author(s):  
Bhanu Prakash Yarlagadda ◽  
Angel Rodriguez ◽  
Peng Li ◽  
John Ayers ◽  
Faquir Jain
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Structural Data ◽  
Epitaxial Films ◽  
Lower Growth ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Compositional Control ◽  
Lattice Matched

AbstractWe report the growth of ZnSe1−xTex (x < 0.9) epitaxial layers using photoassisted Metal- Organic Vapor Phase Epitaxy (MOVPE) on lattice-matched InGaAs/InP (001) substrates. Ternary compositional control was studied as a function of the gas phase composition, growth temperature (360°C – 400°C) and irradiation (12 mW/cm2 – 48mW/cm2). Compositional and structural data were obtained by x-ray rocking curves from 004 and 044 reflections. Lower growth temperatures increased the relative tellurium incorporation but at the expense of the growth rate.

High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy

2000 ◽  
Vol 77 (9) ◽  
pp. 1286-1288 ◽  
Author(s):  
Shigeru Kimura ◽  
Hidekazu Kimura ◽  
Kenji Kobayashi ◽  
Tomoaki Oohira ◽  
Koich Izumi ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Narrow Stripe

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

2017 ◽  
Vol 50 (16) ◽  
pp. 165103 ◽  
Author(s):  
Quanzhong Jiang ◽  
Duncan W E Allsopp ◽  
Chris R Bowen
Keyword(s):  
Vapor Phase ◽  
Polycrystalline Diamond ◽  
Epitaxial Films ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Analysis of Gas Phase Reaction Pathways for InN Metal Organic Vapor Phase Epitaxy

2018 ◽  
Vol 51 (7) ◽  
pp. 605-608
Author(s):  
Junji Sone ◽  
Kouta Uematsu ◽  
Yuuki Matsufuji ◽  
Masato Oshima ◽  
Katsumi Yamada ◽  
...  
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Reaction Pathways ◽  
Phase Reaction ◽  
Gas Phase Reaction ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 20 (2) ◽  
pp. 102-104 ◽  
Author(s):  
A. Lupu ◽  
F. H. Julien ◽  
S. Golka ◽  
G. Pozzovivo ◽  
G. Strasser ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Lattice Matched

scholarly journals An instrument for in situ coherent x-ray studies of metal-organic vapor phase epitaxy of III-nitrides

2017 ◽  
Vol 88 (3) ◽  
pp. 035113 ◽  
Author(s):  
Guangxu Ju ◽  
Matthew J. Highland ◽  
Angel Yanguas-Gil ◽  
Carol Thompson ◽  
Jeffrey A. Eastman ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Optical Investigations of AlGaN on GaN Epitaxial Films

1999 ◽  
Vol 4 (S1) ◽  
pp. 244-249 ◽  
Author(s):  
G. Steude ◽  
T. Christmann ◽  
B.K. Meyer ◽  
A. Goeldner ◽  
A. Hoffmann ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Compressive Strain ◽  
Stokes Shift ◽  
Epitaxial Films ◽  
Luminescence Line ◽  
Temperature Dependent ◽  
Organic Vapor ◽  
Metal Organic ◽  
Random Alloy ◽  
Gan Film

We have investigated AlxGa1−xN /GaN heterostructures (0<x<0.22) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence (PL), reflexion and cathodo-luminescence experiments. The energetic positions of the free A-exciton in GaN and AlGaN as a function of the alloy compositions are deduced from temperature dependent PL and from reflexion measurements. We obtain a small bowing parameter and no evidence for a Stokes shift between absorption and emission. The AlxGa1−xN films induce additional compressive strain on the underlying GaN film. Compositional inhomogeneities are present, but the fluctuations are too small to be important for carrier localisation. The broadening of the luminescence line width in the alloy can be described by statistical disorder of a random alloy.

Characterization of high-quality epitaxial AlN films grown by MOVPE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiko Shibata ◽  
Keiichiro Asai ◽  
Teruyo Nagai ◽  
Shigeaki Sumiya ◽  
Mitsuhiro Tanaka ◽  
...  
Keyword(s):  
Surface Region ◽  
Epitaxial Films ◽  
High Quality ◽  
Edge Type ◽  
X Ray ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
Almost All

AbstractThis paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typical full width at half maximum (FWHM) values of x-ray rocking curves (XRC) for (0002) and (10-10) of the AlN are 80arcsec and 1800arcsec, respectively. From transmission electron microscopy (TEM) observations, edge-type dislocations thread the AlN layer, however, almost all screw-type dislocations disappear at an early AlN growth stage. The dislocation density of the AlN films in its surface region is as low as approximately 1x1010 cm-2. The distribution of the dislocations is considered to be caused by a large twisted mosaicity and a very small tilted mosaicity.

Ordering in GaxIn1−xAsyP1−y Detected by Diffraction Methods

1995 ◽  
Vol 417 ◽  
Author(s):  
I. Rechenberg ◽  
A. Oster ◽  
A. Knauer ◽  
U. Richter ◽  
J. Menniger ◽  
...  
Keyword(s):  
High Resolution ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Temperature Behaviour ◽  
Anomalous Temperature ◽  
X Ray ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
Lattice Matched

AbstractGa0.54In0.46As0.12P0.88 lattice matched to GaAs and grown by metal organic vapor phase epitaxy (MOVPE) shows an anomalous temperature behaviour of its cathodoluminescence (CL) emission. Using high resolution x-ray diffraction (HRXRD) and transmission electron diffraction (TED), ordering in this quarternary alloy can be identified as the reason for this behaviour. The ordering follows the same trends with respect to misorientation that are known for InGaP. In addition to ordering, compositional fluctuations related to a miscibility gap are found in this material. In contrast, layers with a higher As-content (y=0.5; y=0.76) do not show properties related to ordering.

Single and Double Variant Cupt-B Ordered GalnAs

1999 ◽  
Vol 583 ◽  
Author(s):  
R. L. Forrest ◽  
E. D. Meserole ◽  
R. T. Nielsen ◽  
M. S. Goorsky ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Order Parameter ◽  
Growth Conditions ◽  
Semiconductor Heterostructures ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Inp Substrates ◽  
Lattice Matched

AbstractNominally lattice-matched GaInAs layers grown by metal organic vapor phase epitaxy on InP substrates have been studied using high-resolution x-ray diffraction (HRXRD) to determine the growth conditions under which ordering is introduced. HRXRD provides an independent means to quantify the order parameter of semiconductor heterostructures as well as the ordering on different {111} planes, i.e., double variant ordering. This independent means to determine ordering provides for a better understanding of the effects of ordering on the electronic and optical properties. Double variant ordering was observed for epitaxial layers grown on exact (001) InP substrates, with an order parameter of about 0.1 in both variants. For substrates that were miscut by 6 degrees, single variant ordering was detected. In these cases, an order parameter as high as 0.66 was measured for certain growth conditions. The layers grown on vicinal substrates are all of high crystalline quality, those on (001) substrates exhibit some mosaic spread.

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