Tem Study of the Accidental Modulation of Mbe Grown AlxGal-x As
Keyword(s):
ABSTRACTComposition modulations with a wavelength of -1-3 nm have been observed by transmission electron microscopy in nominally uniform AlxGa1-x As grown by molecular beam epitaxy. We describe the characterisation of this phenomenon and discuss its possible origins, in the light of the reported existence of a long range ordered structure.
2016 ◽
Vol 30
(20)
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pp. 1650269
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1999 ◽
Vol 38
(Part 1, No. 8)
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pp. 4673-4675
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1995 ◽
Vol 150
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pp. 388-393
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