Growth of Uncracked Al0.80Ga0.20N/GaN DBR on Si(111)

2004 ◽  
Vol 831 ◽  
Author(s):  
M. B. Charles ◽  
M. J. Kappers ◽  
C. J. Humphreys

ABSTRACTThe strain in Al0.80Ga0.20N/GaN distributed Bragg reflectors (DBRs) grown by metalorganic vapour phase epitaxy (MOVPE) on Si(111) was studied using high resolution X-ray diffraction (XRD). Previous studies have shown that a 50nm Al0.80Ga0.20N layer induced a compressive strain in Al0.12Ga0.88N capping layers and prevented crack formation. A seven period Al0.80Ga0.20N/GaN DBR was grown, but this was found to be cracked at room temperature, despite compression in the GaN layers. This problem was solved by growing an identical structure with the addition of a 650nm GaN cap, and due to the compression in this layer, the structure was crack-free.

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Duc V. Dinh ◽  
Nan Hu ◽  
Yoshio Honda ◽  
Hiroshi Amano ◽  
Markus Pristovsek

Abstract Growth of AlxGa1−xN layers (0 ≤ x ≤ 1) simultaneously on polar (0001), semipolar ($$10\bar{{\rm{1}}}$$ 10 1 ¯ 3) and ($$11\bar{{\rm{2}}}2$$ 11 2 ¯ 2 ), as well as nonpolar ($$10\bar{{\rm{1}}}0$$ 10 1 ¯ 0 ) and ($$11\bar{{\rm{2}}}0$$ 11 2 ¯ 0 ) AlN templates, which were grown on planar sapphire substrates, has been investigated by metal-organic vapour phase epitaxy. By taking into account anisotropic in-plane strain of semi- and non-polar layers, their aluminium incorporation has been determined by x-ray diffraction analysis. Optical emission energy of the layers was obtained from room-temperature photoluminescence spectra, and their effective bandgap energy was estimated from room-temperature pseudo-dielectric functions. Both x-ray diffraction and optical data consistently show that aluminium incorporation is comparable on the polar, semi- and non-polar planes.


1986 ◽  
Vol 82 ◽  
Author(s):  
D.K. Bowen ◽  
M.J. Hill ◽  
B.K. Tanner

ABSTRACTThe application of double crystal X-ray diffractometry and computer simulation to the characterization of lattice parameter variations through the thickness of heteroepitaxial layers is reviewed. The sensitivity is demonstrated in studies of graded layers grown by vapour phase epitaxy. Capping layers significantly affect rocking curves from superlattice structures. The use of glancing angle diffraction to characterize thin, low period multilayers is examined.


1999 ◽  
Vol 28 (10) ◽  
pp. 1081-1083 ◽  
Author(s):  
S. G. Patterson ◽  
G. S. Petrich ◽  
R. J. Ram ◽  
L. A. Kolodziejski

2010 ◽  
Vol 528 (1) ◽  
pp. 58-64 ◽  
Author(s):  
C. Berger ◽  
P. Moser ◽  
A. Dadgar ◽  
J. Bläsing ◽  
R. Clos ◽  
...  

2019 ◽  
Vol 126 (21) ◽  
pp. 213109 ◽  
Author(s):  
P. H. Griffin ◽  
M. Frentrup ◽  
T. Zhu ◽  
M. E. Vickers ◽  
R. A. Oliver

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