Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells

2004 ◽  
Vol 831 ◽  
Author(s):  
S.F. Li ◽  
D.J. As ◽  
K. Lischka ◽  
D.G. Pacheco-Salazar ◽  
L.M.R. Scolfaro ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Bandgap Energy ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Excitation Spectra ◽  
Room Temperature Photoluminescence ◽  
Double Heterostructures ◽  
Peak Energy

ABSTRACTCubic InGaN/GaN double heterostructures and multi-quantum-wells have been grown by Molecular Beam Epitaxy on cubic 3C-SiC. We find that the room temperature photoluminescence spectra of our samples has two emission peaks at 2.4 eV and 2.6 e V, respectively. The intensity of the 2.6 eV decreases and that of the 2.4 eV peak increases when the In mol ratio is varied between X = 0.04 and 0.16. However, for all samples the peak energy is far below the bandgap energy measured by photoluminescence excitation spectra, revealing a large Stokes-like shift of the InGaN emission. The temperature variation of the photoluminescence intensity yields an activation energy of 21 meV of the 2.6 eV emission and 67 meV of the 2.4 eV emission, respectively. The room temperature photoluminescence of fully strained multi quantum wells (x = 0.16) is a single line with a peak wavelength at about 510 nm.

Room‐temperature photoluminescence in strained quantum wells of InGaAs/GaAs grown by molecular‐beam epitaxy

1992 ◽  
Vol 71 (1) ◽  
pp. 539-541 ◽  
Author(s):  
Faustino Martelli ◽  
Maria Grazia Proietti ◽  
Maria Gabriella Simeone ◽  
Maria Rita Bruni ◽  
Marco Zugarini
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Photoluminescence ◽  
Strained Quantum Wells

scholarly journals Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown

1999 ◽  
Vol 4 (S1) ◽  
pp. 81-86 ◽  
Author(s):  
Yong-Hoon Cho ◽  
B. D. Little ◽  
G. H. Gainer ◽  
J. J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Bandgap Energy ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Carrier Recombination ◽  
Peak Energy ◽  
Emission Behavior ◽  
Pl Emission ◽  
Increasing Temperature

Temperature-dependent photoluminescence (PL) studies have been performed on InGaN epilayers and InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous temperature dependent emission behavior (specifically an S-shaped decrease-increase-decrease) of the peak energy (EPL) of the InGaN-related PL emission with increasing temperature. In the case of the InGaN epilayer, EPL decreases in the temperature range of 10 – 50 K, increases for 50 – 110 K, and decreases again for 110 – 300 K with increasing temperature. For the InGaN/GaN MQWs, EPL decreases from 10 – 70 K, increases from 70 – 150 K, then decreases again for 150 – 300 K. The actual temperature dependence of the PL emission was estimated with respect to the bandgap energy determined by photoreflectance spectra. We observed that the PL peak emission shift has an excellent correlation with a change in carrier lifetime with temperature. We demonstrate that the temperature-induced S-shaped PL shift is caused by the change in carrier recombination dynamics with increasing temperature due to inhomogeneities in the InGaN structures.

scholarly journals Room temperature photoluminescence of Ge multiple quantum wells with Ge-rich barriers

2011 ◽  
Vol 98 (3) ◽  
pp. 031106 ◽  
Author(s):  
E. Gatti ◽  
E. Grilli ◽  
M. Guzzi ◽  
D. Chrastina ◽  
G. Isella ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Room Temperature Photoluminescence

Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in Mocvd-Grown InGaN Epilayers and InGaN/GaN Quantum Wells

1998 ◽  
Vol 537 ◽  
Author(s):  
Yong-Hoon Cho ◽  
B. D. Little ◽  
G. H. Gainer ◽  
J. J. Song ◽  
S. Keller ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Bandgap Energy ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Carrier Recombination ◽  
Peak Energy ◽  
Emission Behavior ◽  
Pl Emission ◽  
Increasing Temperature

AbstractTemperature-dependent photoluminescence (PL) studies have been performed on InGaN epilayers and InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous temperature dependent emission behavior (specifically an S-shaped decrease-increase-decrease) of the peak energy (EpL) of the InGaN-related PL emission with increasing temperature. In the case of the InGaN epilayer, EPL decreases in the temperature range of 10 - 50 K, increases for 50 - 110 K, and decreases again for 110 - 300 K with increasing temperature. For the InGaN/GaN MQWs, EPL decreases from 10 - 70 K, increases from 70 - 150 K, then decreases again for 150 - 300 K. The actual temperature dependence of the PL emission was estimated with respect to the bandgap energy determined by photoreflectance spectra. We observed that the PL peak emission shift has an excellent correlation with a change in carrier lifetime with temperature. We demonstrate that the temperature-induced S-shaped PL shift is caused by the change in carrier recombination dynamics with increasing temperature due to inhomogeneities in the InGaN structures.

Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
Mitsuru Funato ◽  
Koji Nishizuka ◽  
Yoichi Kawakami ◽  
Yukio Narukawa ◽  
Takashi Mukai
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Growth Technique ◽  
Recombination Lifetime ◽  
Piezoelectric Fields

ABSTRACTInGaN/GaN multiple quantum wells (MQWs) with [0001], <11.2>, and <11.0> orientations have been fabricated by means of the re-growth technique on patterned GaN templates with striped geometry, normal planes of which are (0001) and {11.0}, on sapphire (0001) substrates. It was found that photoluminescence intensity of the {11.2} QW is the strongest among the three QWs, and its internal quantum efficiency was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {11.2} QW was about 0.39 ns at 14 K, which was 3.8 times shorter than that of conventional c-oriented QWs emitting at a similar wavelength. These findings are well explained by the high internal quantum efficiency in the {11.2} QW owing to the suppression of piezoelectric fields.

Gas-Source Molecular Beam Epitaxy Growth and Characterization of GaNP/GaP Structures

2000 ◽  
Vol 618 ◽  
Author(s):  
H. P. Xin ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Conduction Band ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum ◽  
Gas Source ◽  
X Band ◽  
Peak Energy

ABSTRACTGaNP bulk layers with different N concentrations and GaN0.025P0.975/GaP multiple quantum wells (MQWs) with various well thicknesses were grown on (100) GaP substrates by gas-source molecular beam epitaxy with a RF nitrogen radical beam source. Using high-resolution X-ray rocking curves, photoluminescence (PL) and absorption measurements, we have shown that incorporation of N in GaNxP1−x, alloys (x ≥0.43%) leads to a direct bandgap behavior of GaNP, and yields strong room-temperature PL from the epilayers. A large Stokes shift of 200 meV is found between the PL peak energy and the absorption edge for the GaNP epilayers, indicating a very strong carrier localization. From the PL peaks of a series of GaN0.025P0.975/GaP MQWs with different well thicknesses grown at the same growth condition, a large conduction-band effective mass mc* − 0.9 me has been obtained for the GaN0.025P0.975alloy, indicating a mixing of Γ and X band wave functions in the conduction band

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