Trapping of Hydrogen in Carbon Nitride Films During or After High Temperature Heat Treatment

ABSTRACTThin films of carbon nitride deposited by ion beam assisted deposition or by magnetron sputter deposition typically contain a significant fraction of hydrogen, 1–30 atomic percent (at.%). In order to improve the thermal stability of the properties of the films, attempts have been made to minimize the hydrogen trapped during deposition. Such films typically have less than 5 at.% hydrogen. On heating these films in ultra high purity (99.999%) argon, it has been found that above 600°C they start to absorb significant amounts of hydrogen, this despite retaining their mechanical integrity. The composition of the films is determined using Rutherford Backscattering Spectroscopy in combination with Elastic Recoil Spectroscopy for detecting the hydrogen isotopes. In this paper, the possible sources of the hydrogen have been investigated by exposing the samples to deuterated water or deuterium gas during or immediately after the heat treatment.

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Structural properties of amorphous carbon nitride films prepared by ion beam assisted deposition

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2004.03.025 ◽

2004 ◽

Vol 338-340 ◽

pp. 486-489 ◽

Cited By ~ 2

Author(s):

A.S. Ferlauto ◽

A. Champi ◽

C.A. Figueroa ◽

C.T.M. Ribeiro ◽

F.C. Marques ◽

...

Keyword(s):

Structural Properties ◽

Amorphous Carbon ◽

Carbon Nitride ◽

Ion Beam ◽

Ion Beam Assisted Deposition ◽

Amorphous Carbon Nitride

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Effects of increasing nitrogen concentration on the structure of carbon nitride films deposited by ion beam assisted deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1285993 ◽

2000 ◽

Vol 18 (5) ◽

pp. 2277 ◽

Cited By ~ 45

Author(s):

P. Hammer ◽

N. M. Victoria ◽

F. Alvarez

Keyword(s):

Carbon Nitride ◽

Ion Beam ◽

Nitrogen Concentration ◽

Ion Beam Assisted Deposition

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Raman and infrared spectroscopy studies of carbon nitride films prepared on Si (100) substrates by ion beam assisted deposition

Journal of the Brazilian Chemical Society ◽

10.1590/s0103-50532006000600014 ◽

2006 ◽

Vol 17 (6) ◽

pp. 1163-1169 ◽

Cited By ~ 8

Author(s):

Wilmer Sucasaire ◽

Masao Matsuoka ◽

Karina C. Lopes ◽

Juan C. R. Mittani ◽

Luis H. Avanci ◽

...

Keyword(s):

Infrared Spectroscopy ◽

Carbon Nitride ◽

Ion Beam ◽

Ion Beam Assisted Deposition ◽

Raman And Infrared Spectroscopy ◽

Spectroscopy Studies

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A study on functionally graded HA coatings processed using ion beam assisted deposition with in situ heat treatment

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2005.09.027 ◽

2006 ◽

Vol 200 (20-21) ◽

pp. 6111-6116 ◽

Cited By ~ 50

Author(s):

A. Rabiei ◽

B. Thomas ◽

C. Jin ◽

R. Narayan ◽

J. Cuomo ◽

...

Keyword(s):

Heat Treatment ◽

Ion Beam ◽

Functionally Graded ◽

Ion Beam Assisted Deposition ◽

In Situ Heat Treatment

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Ion-beam-assisted deposition of nonhydrogenated a-Si:C films

Canadian Journal of Physics ◽

10.1139/p96-015 ◽

1996 ◽

Vol 74 (3-4) ◽

pp. 97-101

Author(s):

C. D. Tucker ◽

D. E. Brodie

Keyword(s):

Electron Cyclotron Resonance ◽

Defect Density ◽

Ion Beam ◽

High Vacuum ◽

Argon Plasma ◽

Localized States ◽

Structural Defects ◽

Electrical Characteristics ◽

Ion Beam Assisted Deposition ◽

Ultra High Purity

Amorphous silicon carbide (a-Si:C) films were prepared by low-energy ion-beam-assisted deposition (IBAD) in an attempt to remove structural defects in the "lattice" and improve the electrical characteristics of the film. The ion beam was generated by electron cyclotron resonance from an ultra-high-purity argon plasma. The deposition environment was first evacuated to a very high vacuum to eliminate all but trace amounts of water vapour and other gases so that improvements in the electrical and (or) structural properties of the film would be attributable to the influence of the densification by ion bombardment and not to contaminants. The IBAD process does improve the film characteristics by reducing the density of localized states at the Fermi level and the porosity of the film. However, even though these films have the best electrical characteristics obtained thus far for these kind of films, none of them exhibited device quality and none were observed to be photoconducting. A large density (≈1 at.%) of implanted argon atoms may be limiting the reduction in the defect density that might otherwise be achievable.

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Preparation of carbon nitride thin films by ion beam assisted deposition and their mechanical properties

Thin Solid Films ◽

10.1016/s0040-6090(97)00420-3 ◽

1997 ◽

Vol 308-309 ◽

pp. 239-244 ◽

Cited By ~ 46

Author(s):

M Kohzaki ◽

A Matsumuro ◽

T Hayashi ◽

M Muramatsu ◽

K Yamaguchi

Keyword(s):

Thin Films ◽

Mechanical Properties ◽

Carbon Nitride ◽

Ion Beam ◽

Ion Beam Assisted Deposition

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Adhesion and Tribological Properties of Ag and Ag/Ti Films on Zro2 Ceramic Substrates After Heat Treatment at 250°C

MRS Proceedings ◽

10.1557/proc-239-629 ◽

1991 ◽

Vol 239 ◽

Cited By ~ 1

Author(s):

J. H. Hsieh ◽

O. O. Ajayi ◽

A. Erdemir ◽

F. A. Nichols

Keyword(s):

Heat Treatment ◽

Tribological Properties ◽

Ion Beam ◽

Negative Effects ◽

Ceramic Substrates ◽

Ion Beam Assisted Deposition ◽

Before And After ◽

Pin On Disc ◽

The Relationship ◽

Ti Films

ABSTRACTAg and Ag/Ti films were deposited on ZrO2 substrates by ion-beam-assisted deposition. Adhesion of these films was measured before and after heat treatment at 250°C in air. The results show that a graded interface between Ag and Ti was necessary for the Ag films to survive the heat treatment. Reciprocating pin-on-disc tests were performed at 150°C after heat treatment to investigate the relationship between adhesion and tribological properties. The failure of Ag and Ag/Ti (without graded interface) films was also observed during wear tests. However, this Ag film failure did not result in negative effects. All three Ag-coated substrates show better tribological behavior.

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