A Systematic Study of the Formation of Nano-Tips on Silicon Thin Films by Excimer Laser Irradiation

2005 ◽  
Vol 872 ◽  
Author(s):  
D.G. Georgiev ◽  
R.J. Baird ◽  
I. Avrutsky ◽  
G. Auner ◽  
G. Newaz ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Single Pulse ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Direct Laser ◽  
Direct Laser Fabrication ◽  
Krf Excimer Laser

AbstractRecently, we reported conditions for controllable, direct laser fabrication of sharp conical tips with heights of about one micrometer and apical radii of curvature of several tens of nanometers. An individual cone is formed when a single-crystal silicon film on an insulator substrate is irradiated in air environment with a single pulse from a KrF excimer laser, homogenized and shaped to a circular spot several microns in diameter. In this work, we present a study of the formation of such tips as a function of the laser fluence, the film thickness, and the diameter of the irradiated spot. Atomic force microscopy and scanning electron microscopy were used to study the topography of the structures. A simple mechanism of formation based on movement of melted material is proposed. We have also studied structures (nano-ridges) that resulted from irradiation with narrow lines (width of several microns) instead of circular spots.

Single pulse vibrational Raman scattering by a broadband KrF excimer laser in a hydrogen–air flame

1990 ◽  
Vol 29 (15) ◽  
pp. 2325 ◽  
Author(s):  
Robert W. Pitz ◽  
Joseph A. Wehrmeyer ◽  
J. M. Bowling ◽  
Tsarng-Sheng Cheng
Keyword(s):  
Raman Scattering ◽  
Excimer Laser ◽  
Single Pulse ◽  
Krf Excimer Laser

Phosphorus and Boron Doping of Silicon Thin Films Using ArF Excimer Laser

1991 ◽  
Vol 236 ◽  
Author(s):  
A. Slaoui ◽  
M. Elliq ◽  
H. Pattyn ◽  
E. Fogarassy ◽  
S. De Unamuno ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Excimer Laser ◽  
Silicon Film ◽  
Boron Doping ◽  
Electrical Characteristics ◽  
Silicon Thin Films ◽  
Shallow Junctions ◽  
Doping Technique ◽  
Arf Excimer Laser ◽  
B Doping

AbstractThis work describes phosphorus (P) and boron (B) doping of polysilicon filns deposited on quartz. Doping is achieved by means of a pulsed ArF excimer laser to melt a controlled thickness of amorphous or polycristalline silicon film coated with a spinon silicate glass (SOG) film containing the dopant (P or B). We have investigated the influence of doping parameters such as laser fluence, number of shots and dopant film thickness on the sheet resistance and the incorporation rate. From these results, we have shown that high doped, shallow junctions presenting sheet resistance lower than 5 kΩ/∠ can be obtained. Poly-Si TFT's with good electrical characteristics were successfully fabricated using this doping technique.

scholarly journals Single-Crystal Silicon Optical Fiber by Direct Laser Crystallization

ACS Photonics ◽  
2016 ◽  
Vol 4 (1) ◽  
pp. 85-92 ◽  
Author(s):  
Xiaoyu Ji ◽  
Shiming Lei ◽  
Shih-Ying Yu ◽  
Hiu Yan Cheng ◽  
Wenjun Liu ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Laser Crystallization ◽  
Crystal Silicon ◽  
Direct Laser

Transfer of an ultrathin single crystal silicon film from a Silicon On Insulator to a polymer

2020 ◽  
pp. 100107
Author(s):  
L.G. Michaud ◽  
E. Azrak ◽  
C. Castan ◽  
F. Fournel ◽  
F. Rieutord ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Film ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon

Non Destructive Determination of the Threading Dislocation Density of Smooth Simox Substrates using Atomic Force Microscopy

2000 ◽  
Vol 6 (S2) ◽  
pp. 1088-1089
Author(s):  
A. Domenicucci ◽  
R. Murphy ◽  
D. Sadanna ◽  
S. Klepeis
Keyword(s):  
Atomic Force Microscopy ◽  
High Temperature ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
High Dose ◽  
Threading Dislocation ◽  
Crystal Silicon ◽  
Force Microscopy ◽  
Atomic Force ◽  
High Temperature Anneal

Atomic force microscopy (AFM) has been used extensively in recent years to study the topographic nature of surfaces in the nanometer range. Its high resolution and ability to be automated have made it an indispensable tool in semiconductor fabrication. Traditionally, AFM has been used to monitor the surface roughness of substrates fabricated by separation by implanted oxygen (SIMOX) processes. It was during such monitoring that a novel use of AFM was uncovered.A SIMOX process requires two basic steps - a high dose oxygen ion implantation (1017 to 1018 cm-3) followed by a high temperature anneal (>1200°C). The result of these processes is to form a buried oxide layer which isolates a top single crystal silicon layer from the underlying substrate. Pairs of threading dislocations can form in the top silicon layer during the high temperature anneal as a result of damage caused during the high dose oxygen implant.

Sign in / Sign up

Export Citation Format

Share Document