scholarly journals Suppression of the Uranium-Hydrogen Reaction using High-Dose Carbon Implantation

1987 ◽  
Vol 93 ◽  
Author(s):  
R. G. Musket
Keyword(s):  
Auger Electron Spectroscopy ◽  
Oxide Layer ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Uranium Oxide ◽  
High Dose ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glancing Angle

ABSTRACTWe have previously reported the delay and reduction of the hydriding of uranium by implantation of oxygen. The reduced hydriding was attributed to the presence of the uranium oxide layer created near room temperature. In this paper we present results for the layers formed by implantation of 80 keV C+ to a dose of 8E17 C/cm2. The carbide layers formed were characterized by Auger electron spectroscopy, Rutherford backscattering, and glancing angle x-ray diffraction. Hydriding properties of both nonimplanted and implanted uranium were measured for 76 Torr hydrogen at 130°C. The implanted specimens had significantly longer incubation times for the start of the reaction after exposure to hydrogen and less area participating in the reaction.

Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits

2001 ◽  
Vol 695 ◽  
Author(s):  
Robert Esser ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Devices ◽  
Auger Electron Spectroscopy Depth ◽  
Interdiffusion Coefficients

ABSTRACTA refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized

Auger electron spectroscopy and X-ray diffraction studies of Ti-Si layers synthesised by ion implantation

1990 ◽  
Vol 114 (1-2) ◽  
pp. 93-97 ◽  
Author(s):  
S. V. Vidwans ◽  
A. M. Narsale ◽  
V. P. Salvi ◽  
A. A. Rangwala ◽  
L. Guzman ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray Diffraction ◽  
X Ray

X-ray Diffraction of Plasma Nitrided Ti-6AI-4V

1989 ◽  
Vol 33 ◽  
pp. 129-135
Author(s):  
A. Raveh ◽  
G. Kimmel ◽  
R. Avni ◽  
A. Grill
Keyword(s):  
Solid Solution ◽  
Auger Electron Spectroscopy ◽  
Elemental Analysis ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Relative Concentration ◽  
X Ray Diffraction ◽  
Feed Composition ◽  
X Ray

AbstractTi-6Al-4V alloy has been nitrided in plasmas of N2 -H2 -Ar. The structure has been characterized by X-ray diffraction (XRD) for the determination of the products formed. The information was supported by elemental analysis with Auger Electron Spectroscopy (AES).Three phases were identified as follows: δ-TiN, ε-Ti2N and α'-Ti (solid solution of nitrogen in titanium). The gas-feed composition affects the nitriding process as found from phase orientation and relative concentration of the products.

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