Discrete donor-acceptor pair lines, two-hole excited states, and inelastic light scattering from nitrogen centers in zinc selenide epitaxial layers

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

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Modified donor–acceptor pair luminescence in heavily nitrogen‐doped zinc selenide

Applied Physics Letters ◽

10.1063/1.115229 ◽

1995 ◽

Vol 67 (22) ◽

pp. 3307-3309 ◽

Cited By ~ 27

Author(s):

C. Kothandaraman ◽

G. F. Neumark ◽

R. M. Park

Keyword(s):

Zinc Selenide ◽

Acceptor Pair ◽

Nitrogen Doped ◽

Donor Acceptor ◽

Donor Acceptor Pair

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Zn-Related Donor-Acceptor Pair Emission in $\bf CuAlSe_{2}$ Epitaxial Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l345 ◽

1994 ◽

Vol 33 (Part 2, No. 3A) ◽

pp. L345-L347 ◽

Cited By ~ 6

Author(s):

Sho Shirakata ◽

Shigefusa Chichibu ◽

Satoru Matsumoto ◽

Shigehiro Isomura

Keyword(s):

Epitaxial Layers ◽

Acceptor Pair ◽

Donor Acceptor ◽

Related Donor ◽

Donor Acceptor Pair

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Oxygen related shallow acceptor in GaN

MRS Proceedings ◽

10.1557/proc-831-e5.10 ◽

2004 ◽

Vol 831 ◽

Cited By ~ 9

Author(s):

B. Monemar ◽

P. P. Paskov ◽

F. Tuomisto ◽

K. Saarinen ◽

M. Iwaya ◽

...

Keyword(s):

Positron Annihilation ◽

Positron Annihilation Spectroscopy ◽

Epitaxial Layers ◽

Photoluminescence Spectra ◽

Acceptor Pair ◽

Shallow Acceptor ◽

General Correlation ◽

Mocvd Growth ◽

Donor Acceptor ◽

Donor Acceptor Pair

ABSTRACTWe report on deliberate O doping of GaN epitaxial layers during MOCVD growth, using H2O and CO2 as precursors. The photoluminescence spectra show a dominant 3.27 eV emission at 2 K known to be a donor-acceptor pair (DAP) transition. In our samples the intensity of this DAP spectrum correlates with the commonly observed 3.466 eV acceptor bound exciton (ABE) peak, suggesting these spectra are related to the same acceptor. The general correlation of these acceptor spectra with O concentration (as established with SIMS data) suggest that the acceptor is O-related, most likely a VGa-O complex. The concentration was measured with positron annihilation spectroscopy and found to be in the 1016 cm−3 -1017 cm−3 range in different samples. Considering previous results the identity of this residual acceptor is suggested to be a VGa-O-H complex. Previous suggestions that this acceptor is related to Mg, Si or C are discussed and found to be less likely.

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Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

MRS Proceedings ◽

10.1557/proc-378-521 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 5

Author(s):

B. K. Meyer ◽

D. Volm ◽

C. Wetzel ◽

L. Eckey ◽

J.-Ch. Holst ◽

...

Keyword(s):

Low Temperatures ◽

Photoluminescence Spectroscopy ◽

Epitaxial Layers ◽

Acceptor Pair ◽

Time Resolved ◽

Sapphire Substrates ◽

Donor Acceptor ◽

Donor Acceptor Pair ◽

Time Resolved Photoluminescence

AbstractFree and bound exciton luminescences as well as donor-acceptor pair recombination of GaN epitaxial layers on 6H-SiC and sapphire substrates were investigated using time integrated and time resolved photoluminescence measurements at low temperatures. Lifetimes are determined for the donor bound exciton at 3.4722eV and for two acceptor bound excitons with energies of 3.4672eV and 3.459eV. Luminescences between 3.29eV and 3.37eV are identified as due to excitons deeply bound to centers located near the substrate-epilayer interface.

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Analysis of time-resolved donor-acceptor-pair spectra of ZnSe : Li and ZnSe : N

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00779-3 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 531-535

Author(s):

P Bäume

Keyword(s):

Acceptor Pair ◽

Time Resolved ◽

Donor Acceptor ◽

Donor Acceptor Pair

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A New Deep Acceptor in Epitaxial Cubic SiC

MRS Proceedings ◽

10.1557/proc-162-495 ◽

1989 ◽

Vol 162 ◽

Author(s):

J. A. Freitas ◽

S. G. Bishop

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

Excitation Intensity ◽

Acceptor Pair ◽

Deep Acceptor ◽

Intensity Dependence ◽

Pl Spectra ◽

Donor Acceptor ◽

Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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