Study of GaN films grown by metalorganic chemical vapour deposition

1996 ◽  
Vol 1 ◽  
Author(s):  
W. Van der Stricht ◽  
I. Moerman ◽  
P. Demeester ◽  
J. A. Crawley ◽  
E. J. Thrush
Keyword(s):  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Rotating Disk ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Rotating Disk Reactor ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.

Metalorganic Chemical Vapour Deposition of CuInSe2 From Copper and Indium Diselenocarbamates for Solar Cell Devices

1997 ◽  
Vol 485 ◽  
Author(s):  
John McAleese ◽  
Paul O'Brien ◽  
David J. Otway
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CulnSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 – 450 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Examination of Titanium Oxides, Lead Oxides and Lead Titanates Using X-Ray Diffraction and Raman Spectroscopy

1993 ◽  
Vol 310 ◽  
Author(s):  
Lynnette D. Madsen ◽  
Louise Weaver
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Vapour Deposition ◽  
Mixed Oxides ◽  
Chemical Vapour ◽  
Titanium Oxides ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Oxides ◽  
Metalorganic Chemical Vapour Deposition

AbstractSingle oxides (with titanium or lead) deposited as thin films by low pressure metalorganic chemical vapour deposition were investigated by x-ray diffraction and Raman spectroscopy. Examination of mixed oxides (titanates) and silicates were also carried out using these techniques. The crystallographic nature of these thin films were examined and comparisons made to their bulk counterparts. The deposition and anneal conditions 600 for producing cubic PbTiO3 films are discussed briefly.

The Raman Properties of Ag Doped ZnO Microrods Synthesized by Chemical Vapour Deposition

2014 ◽  
Vol 941-944 ◽  
pp. 391-394
Author(s):  
Li Na Wang ◽  
Dan Zhou ◽  
Sa Huo ◽  
Zhong Qi Luan
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Vibrational Mode ◽  
Chemical Vapour ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Local Vibrational Mode ◽  
Doped Zno

Ag doped ZnO microrods are prepared on c-plane sapphire substrates by chemical vapour deposition method at high temperature.The morphology, structure and optical properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectrum, respectively. The prepared Ag doped ZnO microrods have good preferred orientation with very limited structural defects. The Raman bands indicates that a tensile stress existed in the sample and an additional local vibrational mode related to Ag is also found which can be used to confirm the existence of Ag in the Ag doped ZnO microrods.

Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon

2008 ◽  
Vol 600-603 ◽  
pp. 223-226 ◽  
Author(s):  
Günter Wagner ◽  
J. Schwarzkopf ◽  
M. Schmidbauer ◽  
R. Fornari
Keyword(s):  
Residual Strain ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the growth parameters, the residual strain in the 3C-SiC layer was seen to be tensile or compressive. In this work, the influence of parameters, such as growth temperature and C/Si ratio in the vapour phase, on residual strain and macroscopic layer bow is investigated. We found that the wafer bow changes from convex, at a deposition temperature of 1270° C, to concave at 1370° C. High resolution x-ray diffraction data indicate that the crystal-line perfection of the layers is lower for decreasing deposition temperature and increasing compres-sive strain. No remarkable influence of the C/Si ratio in the gaseous atmosphere on the FWHM of the rocking curve was observed.

Complementary self-aligned laser by metalorganic chemical vapour deposition

1985 ◽  
Vol 21 (20) ◽  
pp. 903 ◽  
Author(s):  
L.J. Mawst ◽  
G. Costrini ◽  
C.A. Zmudzinski ◽  
M.E. Givens ◽  
M.A. Emanuel ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical
Sign in / Sign up

Export Citation Format

Share Document