Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon

2008 ◽  
Vol 600-603 ◽  
pp. 223-226 ◽  
Author(s):  
Günter Wagner ◽  
J. Schwarzkopf ◽  
M. Schmidbauer ◽  
R. Fornari
Keyword(s):  
Residual Strain ◽  
Deposition Temperature ◽  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

3C-SiC epitaxial layers were grown on on-axis Si (001) substrates by low-pressure hot-wall chemical vapour deposition. Depending on the growth parameters, the residual strain in the 3C-SiC layer was seen to be tensile or compressive. In this work, the influence of parameters, such as growth temperature and C/Si ratio in the vapour phase, on residual strain and macroscopic layer bow is investigated. We found that the wafer bow changes from convex, at a deposition temperature of 1270° C, to concave at 1370° C. High resolution x-ray diffraction data indicate that the crystal-line perfection of the layers is lower for decreasing deposition temperature and increasing compres-sive strain. No remarkable influence of the C/Si ratio in the gaseous atmosphere on the FWHM of the rocking curve was observed.

Study of GaN films grown by metalorganic chemical vapour deposition

1996 ◽  
Vol 1 ◽  
Author(s):  
W. Van der Stricht ◽  
I. Moerman ◽  
P. Demeester ◽  
J. A. Crawley ◽  
E. J. Thrush
Keyword(s):  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Rotating Disk ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Rotating Disk Reactor ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.

Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

2010 ◽  
Vol 97-101 ◽  
pp. 4213-4216
Author(s):  
Jian Xiong Liu ◽  
Zheng Yu Wu ◽  
Guo Wen Meng ◽  
Zhao Lin Zhan
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

The Performance of Channel Cut Collimators for Precision X-Ray Diffraction Studies of Epitaxial Layers

1990 ◽  
Vol 208 ◽  
Author(s):  
Neil Loxley ◽  
D. Keith Bowen ◽  
Brian K. Tanner
Keyword(s):  
Grazing Incidence ◽  
Curve Analysis ◽  
Epitaxial Layers ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Experimental Performance ◽  
Low Background ◽  
X Ray ◽  
Angle Scattering

ABSTRACTReplacement of the pinhole collimator on a double axis X-ray diffractometer with a device incorporating a channel-cut crystal permits the beam to be pre-conditioned in angular divergence. We examine the merits of such devices, known as channel-cut collimators (CCC's), of different materials and reflections. The experimental performance of InP 004 and Si 022 CCC's is presented.With a reference crystal on the first axis, set in the dispersive peometry with respect to the CCC, conditioning in wavelength spread is achieved. Dispersion broadening is effectively eliminated and no resetting of the reference crystal is required when changing specimen materials or reflections. The devices have extremely low background and reduced Bragg tails. Application of the 4-reflection CCC to rocking curve analysis of thin epitaxial layers, ultra-low angle scattering from biological systems, grazing incidence reflectometry and triple axis diffraction of semi-conductors is discussed.

Investigation Of Nucleation And Initial Stage Of Gan Growth By Atomic Force Microscopy And X-Ray Diffraction

1997 ◽  
Vol 482 ◽  
Author(s):  
P. W. Yip ◽  
S.-Q. Wang ◽  
A. J. Drehman ◽  
L. D. Zhu ◽  
P. E. Norris
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Deposition Temperature ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Initial Stage

AbstractThe nucleation and initial stage of GaN growth on sapphire was investigated by atomic force microscopy, X-ray diffraction and photoluminescence. A 15 to 30 nm thick GaN buffer layer deposited at proper conditions was extremely smooth and nearly amorphous. Proper post deposition annealing resulted in the buffer crystallized. The buffer layer deposition temperature, thickness and annealing time and temperature must be coordinated. Low deposition temperature and/or insufficient annealing of the buffer results in a GaN wafer which has fine spiking surface morphology with an RMS of 3.4 nm for 1.4 μm wafer, strong yellow luminescence and wide xray rocking curve FWHM. High deposition temperature, longer crystallization time, and a low growth rate results in a wafer which exhibits strong band edge luminescence without noticeable yellow luminescence, and a narrow (002) diffraction rocking curve. However, the surface morphology exhibits well developed hexagonal feature with RMS roughness of 14.3 nm for a 570 nm thick layer. X-ray rocking curve analysis revealed buffer crystallization, domain coalescence and alignment process. The FWHM of the ω–scan of GaN (101) diffraction was 1700–2000 arc seconds for 200–1400 nm wafers which indicates that the twist of the domains is not changing much with the growth.

Article

1998 ◽  
Vol 76 (11) ◽  
pp. 1559-1563
Author(s):  
J Hugh Horton ◽  
Johann Rasmusson ◽  
Joseph G Shapter ◽  
Peter R Norton
Keyword(s):  
Chemical Vapour Deposition ◽  
Photoelectron Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organometallic Compounds ◽  
Vapour Phase ◽  
Scanning Tunnelling Microscopy ◽  
X Ray ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

The adsorption of the organometallic compounds bis(hexafluoroacetylacetonato)zinc(II) (Zn(hfac)2) and bis(hexafluoroacetylacetonato)nickel(II) (Ni(hfac)2) on the surface of Si(111)-7×7 were studied by a combination of scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). These compounds are analogues of the compound bis(hexafluoroacetylacetonato)copper(II), which is an important precursor for the chemical vapour deposition of copper that we have previously studied. Both XPS and STM results indicate that the Zn(hfac)2 is adsorbed intact on the surface, and remains intact on the surface at temperatures up to 300 K. The XPS shows a transition from a physisorbed state to a chemisorbed state at temperatures between 160 and 300 K. At higher temperatures Zn(hfac)2 decomposed to form Zn and fluorocarbon fragments. The metal component diffused into the substrate. The Ni(hfac)2 complex could not be successfully adsorbed on the Si surface: it was shown that this was due to decomposition of the molecule in the vapour phase, probably due to the higher temperatures needed to evaporate this relatively involatile compound.Key words: scanning tunnelling microscopy, chemical vapour deposition, zinc, copper.

Examination of Titanium Oxides, Lead Oxides and Lead Titanates Using X-Ray Diffraction and Raman Spectroscopy

1993 ◽  
Vol 310 ◽  
Author(s):  
Lynnette D. Madsen ◽  
Louise Weaver
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Vapour Deposition ◽  
Mixed Oxides ◽  
Chemical Vapour ◽  
Titanium Oxides ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Oxides ◽  
Metalorganic Chemical Vapour Deposition

AbstractSingle oxides (with titanium or lead) deposited as thin films by low pressure metalorganic chemical vapour deposition were investigated by x-ray diffraction and Raman spectroscopy. Examination of mixed oxides (titanates) and silicates were also carried out using these techniques. The crystallographic nature of these thin films were examined and comparisons made to their bulk counterparts. The deposition and anneal conditions 600 for producing cubic PbTiO3 films are discussed briefly.

Study of In-Plane Orientation of Epitaxial Si Films Grown on 6H-SiC(0001)

2016 ◽  
Vol 858 ◽  
pp. 221-224
Author(s):  
Lian Bi Li ◽  
Zhi Ming Chen
Keyword(s):  
Vapour Deposition ◽  
Lattice Mismatch ◽  
Lattice Structure ◽  
Chemical Vapour ◽  
Structure Model ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Orientation ◽  
Pressure Chemical ◽  
Si Films

The Si/SiC heterojunctions were prepared on 6H-SiC(0001) by low-pressure chemical vapour deposition at 900°C. X-ray diffraction was employed to investigate the in-plane orientation of Si/SiC heterojunctions. A FCC-on-HCP parallel epitaxy was achieved for the Si(111)/SiC(0001) heterostructure with a growth temperature of 900°C and the in-plane orientation relationship was [01-1]Si//[11-20]6H-SiC. Based on the in-plane orientation characterizations, the lattice-structure model of the Si/6H-SiC heterostructure was constructed. It is shown that when the in-plane orientation was (111)[01-1]Si//(0001)[11-20]6H-SiC, the Si/6H-SiC interface had a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%, and the misfit dislocation density at the Si/SiC interface was calculated as 0.487×1014cm-2.

Structural Properties of Microcrystalline Si Solar Cells

2001 ◽  
Vol 664 ◽  
Author(s):  
M. Luysberg ◽  
C. Scholten ◽  
L. Houben ◽  
R. Carius ◽  
F. Finger ◽  
...  
Keyword(s):  
Solar Cells ◽  
Structural Properties ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Special Importance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Si Solar Cells ◽  
Transmission Electron

ABSTRACTThe structural properties of nip-µc-Si:H solar cells are investigated by transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Different structural compositions are obtained by variation of the gas mixture during preparation by plasma enhanced chemical vapour deposition. Nucleation and growth of the n-layer onto textured TCO substrate was found to be similar to the growth on glass substrates. The growth of the i-layer follows a local epitaxy. This implies that the structure of the n-layer is of special importance regarding the control of the microstructure in microcrystalline Si nip solar cells.

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