The Raman Properties of Ag Doped ZnO Microrods Synthesized by Chemical Vapour Deposition

2014 ◽  
Vol 941-944 ◽  
pp. 391-394
Author(s):  
Li Na Wang ◽  
Dan Zhou ◽  
Sa Huo ◽  
Zhong Qi Luan
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Vibrational Mode ◽  
Chemical Vapour ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Local Vibrational Mode ◽  
Doped Zno

Ag doped ZnO microrods are prepared on c-plane sapphire substrates by chemical vapour deposition method at high temperature.The morphology, structure and optical properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectrum, respectively. The prepared Ag doped ZnO microrods have good preferred orientation with very limited structural defects. The Raman bands indicates that a tensile stress existed in the sample and an additional local vibrational mode related to Ag is also found which can be used to confirm the existence of Ag in the Ag doped ZnO microrods.

Metalorganic Chemical Vapour Deposition of CuInSe2 From Copper and Indium Diselenocarbamates for Solar Cell Devices

1997 ◽  
Vol 485 ◽  
Author(s):  
John McAleese ◽  
Paul O'Brien ◽  
David J. Otway
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CulnSe2 have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors In(Se2CNMenHexyl)3 and precursors Cu(Se2CNMenHexyl)2. The precursors were prepared from carbon diselenide. Films were grown on glass between 400 – 450 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

Study of GaN films grown by metalorganic chemical vapour deposition

1996 ◽  
Vol 1 ◽  
Author(s):  
W. Van der Stricht ◽  
I. Moerman ◽  
P. Demeester ◽  
J. A. Crawley ◽  
E. J. Thrush
Keyword(s):  
Vapour Deposition ◽  
Growth Parameters ◽  
Chemical Vapour ◽  
Rotating Disk ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Rotating Disk Reactor ◽  
Metalorganic Chemical Vapour Deposition ◽  
Metalorganic Chemical

In this paper GaN films are examined, which are grown on basal plane (0001) sapphire substrates. Growth is performed in a novel type of vertical rotating disk reactor. The effects of several growth parameters on the film quality are discussed. The results on n-type doping of GaN with SiH4 are presented. The GaN layers were evaluated by surface morphology studies, DC X-ray diffraction, electrical and optical characterisation.

Aerosol-Assisted Chemical Vapour Deposition for Iron Selenide Thin Films from Single Source Ferrocene-Incorporated Selenourea Precursor in the Presence of Surfactants

2015 ◽  
Vol 68 (2) ◽  
pp. 298 ◽  
Author(s):  
Raja Azadar Hussain ◽  
Amin Badshah ◽  
Farida Yasmin ◽  
Malik Dilshad Khan ◽  
Muhammad Nawaz Tahir
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Absorption Spectrometry ◽  
13C Nmr Spectroscopy ◽  
Single Source ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vis Spectroscopy

This article presents the synthesis and characterisation (Fourier transform infrared spectroscopy, 1H NMR and 13C NMR spectroscopy, CHNS (carbon, hydrogen, nitrogen, sulfur) analysis, atomic absorption spectrometry, and single-crystal X-ray diffraction) of a single source molecular precursor 1-(2-fluorolbenzoyl)-3-(3-ferrocenylphenyl)selenourea (M2F). This precursor has been used for the fabrication of FeSe thin films by aerosol-assisted chemical vapour deposition (AACVD) in the presence of different concentrations of two different surfactants (triton and span) keeping all other conditions the same. Fabricated thin films have been characterised with powder X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The interaction of the surfactants with the precursor (M2F) has been evaluated with cyclic voltammetry and UV–vis spectroscopy.

Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

2010 ◽  
Vol 97-101 ◽  
pp. 4213-4216
Author(s):  
Jian Xiong Liu ◽  
Zheng Yu Wu ◽  
Guo Wen Meng ◽  
Zhao Lin Zhan
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

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