scholarly journals Raman Determination of the Phonon Deformation Potentials in α-GaN

Author(s):  
F. Demangeot ◽  
J. Frandon ◽  
M. A. Renucci ◽  
Olivier Briot ◽  
Bernard Gil ◽  
...  

Raman spectroscopy is used to study the effect of the built-in biaxial stress on the E2 and A1 (LO) q = 0 phonon modes of wurtzite GaN layers deposited by metal organic vapor phase epitaxy on (0001) sapphire substrate. By means of phonon frequency shifts, the biaxial pressure coefficients of the mode frequencies are determined and used to calculate the corresponding deformation potentials. Stress calibration has been performed using reflectance data.

1999 ◽  
Vol 595 ◽  
Author(s):  
M. Schubert ◽  
A. Kasic ◽  
T.E. Tiwald ◽  
J.A. Woollam ◽  
V. Harle ◽  
...  

AbstractPhonon and free-carrier effects in a strained hexagonal (α) {GaN}l-{AlN}m superlattice (SL) heterostructure (l = 8 nm, m = 3 nm) are studied by infrared spectroscopic ellipsometry (IRSE) and micro (µ)-Raman scattering. Growth of the heterostructures was performed by metal-organic vapor phase epitaxy (MOVPE) on (0001) sapphire. An unstrained 1 µm-thick α-GaN layer was deposited prior to the SL. SL phonon modes are identified combining results from both IRSE and µ-Raman techniques. The shift of the GaN-sublayer phonon modes is used to estimate an average compressive SL stress of σxx ∼ - 4.3 GPa. The IRSE data reveal a free-carrier concentration of ne ∼ 5×1018 cm−3 within the undoped SL GaN-sublayers. According to the vertical carrier confinement, the free-carrier mobility is anisotropic, and the lateral mobility ( µ⊥ ∼ 400 cm2/Vs, polarization E⊥c-axis) exceeds the vertical mobility (µ∥ ∼ 24 cm2/Vs, E∥c) by one order of magnitude.


2009 ◽  
Vol 1195 ◽  
Author(s):  
Atsushi Koizumi ◽  
Kazuki Oshitanai ◽  
Jaesung Lee ◽  
Kazuo Uchida ◽  
Shinji Nozaki

AbstractThe reliability of InP/InGaAs heterojunction bipolar transistors (HBTs) with highly carbon-doped and zinc-doped InGaAs base layers grown by metal-organic vapor phase epitaxy has been investigated. The Raman spectroscopy reveals that the post-growth annealing for the carbon-doped InGaAs base improves the crystallinity to become as good as that of the zinc-doped InGaAs base. However, the photoluminescence intensity remains lower than that of the zinc-doped InGaAs even after the post-growth annealing. The current gains of the carbon- and zinc-doped base InP/InGaAs HBTs are 63 and 75, respectively, and they are affected by the base crystallinity. After the 15-min current stress test, the current gains decreased by 40 and 3% from the initial current gains for zinc- and carbon-doped base HBTs, respectively, are observed. These results indicate that the carbon-doped base HBT is much more reliable than that of zinc-doped base HBT, though it has a lower current gain.


1999 ◽  
Vol 583 ◽  
Author(s):  
M. C. Hanna ◽  
A. Mascarenhas ◽  
Hyeonsik M. Cheong

AbstractWe have used atomic force microscopy (AFM) and Raman spectroscopy to investigate the development of the surface morphology of (001) direct and vicinal GaInP and GaInAs grown under conditions to produce strong CUPtB ordering. Raman spectroscopy provided direct evidence of CuPtB ordering in layers as thin as 10 nm for GaInP and 5 nm for GaInAs. We find that the morphology of GaInP and GaInAs on (001)6B substrates consists of ridges, which are aligned predominately along the [110] direction (A-direction). These ridges are well developed even at layer thicknesses of 2 nm, and their sides consist of step-bunches and near (001) terraces. On (001) direct substrates, the GaInP morphology is similar to that obtained on 6B substrates, although the step bunches have no preferential orientation, while GaInAs (001) growth proceeds by a combination of 2D-island and step flow growth. We discuss possible reasons for the differences in the morphology of ordered GaInP and GaInAs. The results of this work suggest it may be difficult to produce abrupt heterointerfaces in structures containing ordered GalnP and GaInAs alloys.


1996 ◽  
Vol 449 ◽  
Author(s):  
N. V. Edwards ◽  
S. D. Yoo ◽  
M. D. Bremser ◽  
M. N. Horton ◽  
N. R. Perkins ◽  
...  

ABSTRACTWe provide the widest estimate thus far of the range of tensile and compressive stress (−3.8 to 3.5 kbar) that GaN epitaxial material can withstand before relaxation occurs, and an unambiguous determination of the spin-orbit splitting Δso = 17.0 ± 1 meV for the material. These are achieved by analyzing 10K reflectance data for the energy separation of transitions between the uppermost valence bands and the lowest conduction band of wurtzitic GaN as a function of biaxial stress for a series of GaN films grown on both Al2O3 and 6H-SiC substrates. Our data explicitly show the nonlinear behavior of the excitonic energy splittings B-A and C-A vs. the energy position of the A exciton, which stands in contrast to the linear approximations used by previous workers analyzing material grown only on Al2O3 substrates. Further, the lineshape ambiguities present in GaN reflectance spectra that hindered the accurate determination of such excitonic energies have also been resolved by analyzing these data in reciprocal space, where critical point energies are determined by phase effects to an accuracy of ±0.5 meV.


Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3648
Author(s):  
Vlasta Mohaček-Grošev ◽  
Marija Đuroković ◽  
Aleksandar Maksimović

Raman spectroscopy and Raman mapping analysis, combined with density functional theory calculations were applied to the problem of differentiating similar clinker materials such as alite and belite. The Portland cement clinker 217 (further: clinker) was analysed using colocalised Raman mapping and atomic force microscopy mapping, which provided both spatial and chemical information simultaneously. The main constituents found in the clinker were alite, belite, portlandite, amorphous calcium carbonate, and gypsum. Since phonon bands of alite and belite greatly overlap, and their distinction is important for the hydration process during cement setting, we provided the calculated phonon density of states for alite Ca3SiO5 (<M>Pc structure) and belite Ca2SiO4 (β P21/n structure) here for the first time. Both calculated phonon densities have similar distribution of phonon modes, with a gap between 560 and 810 cm−1. A comparison of the calculated phonon frequencies for Ca3SiO5 and Ca2SiO4 shows that the lowest calculated phonon frequency of β-Ca2SiO4 lies at 102 cm−1, while for <M>Pc alite the lowest phonon frequency is predicted at 27 cm−1. Low frequency Raman spectroscopy could therefore be used for a clearer distinction of these two species in a clinker material.


2000 ◽  
Vol 5 (S1) ◽  
pp. 710-716 ◽  
Author(s):  
M. Schubert ◽  
A. Kasic ◽  
T.E. Tiwald ◽  
J.A. Woollam ◽  
V. Härle ◽  
...  

Phonon and free-carrier effects in a strained hexagonal (α) {GaN}l-{AlN}msuperlattice (SL) heterostructure (l = 8 nm, m = 3 nm) are studied by infrared spectroscopic ellipsometry (IRSE) and micro (µ)-Raman scattering. Growth of the heterostructures was performed by metal-organic vapor phase epitaxy (MOVPE) on (0001) sapphire. An unstrained 1 µm-thick α-GaN layer was deposited prior to the SL. SL phonon modes are identified combining results from both IRSE and µ-Raman techniques. The shift of the GaN-sublayer phonon modes is used to estimate an average compressive SL stress of σxx ∼ - 4.3 GPa. The IRSE data reveal a free-carrier concentration of ne ∼ 5×1018 cm−3 within the undoped SL GaN-sublayers. According to the vertical carrier confinement, the free-carrier mobility is anisotropic, and the lateral mobility (µ⊥ ∼ 400 cm2/Vs, polarization E⊥c-axis) exceeds the vertical mobility (µ|| ∼ 24 cm2/Vs, E||c) by one order of magnitude.


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