High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges
2000 ◽
Vol 5
(S1)
◽
pp. 831-837
Keyword(s):
The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼ 500 Å. Post-etch annealing was found to partially restore the diode characteristics.
Keyword(s):
2000 ◽
Vol 147
(2)
◽
pp. 719
◽
Keyword(s):
2006 ◽
Vol 21
(10)
◽
pp. 2440-2443
◽
Keyword(s):
Keyword(s):
1999 ◽
Vol 17
(4)
◽
pp. 1540
◽
1998 ◽
Vol 16
(3)
◽
pp. 1697-1701
◽