Growth evolution of high-quality MOCVD aluminum nitride using nitrogen as carrier gas on the sapphire substrate

Author(s):  
Samiul Hasan ◽  
Abdullah Mamun ◽  
Kamal Hussain ◽  
Mikhail Gaevski ◽  
Iftikhar Ahmad ◽  
...  
2021 ◽  
Vol 872 ◽  
pp. 159706
Author(s):  
Shuai Chen ◽  
Xiong Zhang ◽  
Shuchang Wang ◽  
Aijie Fan ◽  
Jiaqi He ◽  
...  

2006 ◽  
Vol 203 (7) ◽  
pp. 1708-1711 ◽  
Author(s):  
Craig G. Moe ◽  
Yuan Wu ◽  
Stacia Keller ◽  
James S. Speck ◽  
Steven P. DenBaars ◽  
...  

MRS Advances ◽  
2021 ◽  
Author(s):  
Samiul Hasan ◽  
Abdullah Mamun ◽  
Kamal Hussain ◽  
Dhruvinkumar Patel ◽  
Mikhail Gaevski ◽  
...  
Keyword(s):  

2016 ◽  
Vol 37 (8) ◽  
pp. 984-989
Author(s):  
巩 哲 GONG Zhe ◽  
何大伟 HE Da-wei ◽  
王永生 WANG Yong-sheng ◽  
许海腾 XU Hai-teng ◽  
董艳芳 DONG Yan-fang

2020 ◽  
Vol 518 ◽  
pp. 146218 ◽  
Author(s):  
Bin Tang ◽  
Hongpo Hu ◽  
Hui Wan ◽  
Jie Zhao ◽  
Liyan Gong ◽  
...  

The reproducibility of high-quality wave-length standards emitted from water-cooled mercury-198 discharge lamps of the electrodeless and cold-cathode (Geissler) types has been investigated by means of a Fabry-Perot interferometer. These lamps, now produced commercially in this country, contain a small quantity of the isotope 198 80 Hg with argon, as carrier gas, at a nominal pressure of 3 or 5 mm, in electrodeless and 10 mm. in cold-cathode lamps; electrodeless lamps containing only the isotope and its vapour are also available. Employing for excitation a 100 Mc./sec. oscillator with electrodeless lamps and a transformer delivering 750 V at 25 mA and 50 c./sec. with cold-cathode lamps, the wave-lengths of six 198 80 Hg lines between 4046 and 5791 Å, emitted from a sample of each kind of argon-filled lamp, have been measured in terms of the cadmium red line at retardations of 5 to 25 cm. These measurements, supplemented by intercomparisons of argon-filled and argon-free slectrodeless lamps at a retardation of 20cm., reveal that 198 80 Hg lines are probably subject to an asymmetrical pressure broadening effect, producing a red shift of about 0.0001Å (— 0.0004 cm. -1 ) per mm. of argon. Wave-length reproducibility among different samples of the same kind of lamp with the same filling is of the order of ± 0.000 05 Å, or ± 1 part in 10 8 , for electrodeless lamps and ± 0-0001Å for cold-cathode lamps.


2016 ◽  
Vol 122 (11) ◽  
Author(s):  
Haibo Fan ◽  
Mingzi Wang ◽  
Zhou Yang ◽  
Xianpei Ren ◽  
Mingli Yin ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1634 ◽  
Author(s):  
Zhao ◽  
Hu ◽  
Lei ◽  
Wan ◽  
Gong ◽  
...  

High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-free AlN film on sapphire substrate with a nanometer-scale-thick AlN nucleation layer (NL). Three kinds of nanometer-scale-thick AlN NLs, including in situ low-temperature AlN (LT-AlN) NL, oxygen-undoped ex situ sputtered AlN NL, and oxygen-doped ex situ sputtered AlN NL, were prepared for epitaxial growth of AlN films on sapphire substrates. The influence of nanoscale AlN NL thickness on the optical transmittance, strain state, surface morphology, and threading dislocation (TD) density of the grown AlN film on sapphire substrate were carefully investigated. The average optical transmittance of AlN film on sapphire substrate with oxygen-doped sputtered AlN NL was higher than that of AlN films on sapphire substrates with LT-AlN NL and oxygen-undoped sputtered AlN NL in the 200–270 nm wavelength region. However, the AlN film on sapphire substrate with oxygen-undoped sputtered AlN NL had the lowest TD density among AlN films on sapphire substrates. The AlN film on sapphire substrate with the optimum thickness of sputtered AlN NL showed weak tensile stress, a crack-free surface, and low TD density. Furthermore, a 270-nm AlGaN-based DUV LED was grown on the high-quality and crack-free AlN film. We believe that our results offer a promising and practical route for obtaining high-quality and crack-free AlN film for DUV LED.


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