EXPERIMENTAL STUDY OF THE EFFECT OF REACTIVE GAS INJECTION GEOMETRY IN ATMOSPHERIC PRESSURE INDUCTIVE PLASMA TORCH ON THE CHEMICAL EFFICIENCY

2009 ◽  
Vol 13 (3-4) ◽  
pp. 315-324 ◽  
Author(s):  
J. Degoulange ◽  
D. Pelletier ◽  
B. Bournonville ◽  
G. Chichignoud ◽  
Y. Delannoy ◽  
...  
Keyword(s):  
Experimental Study ◽  
Atmospheric Pressure ◽  
Plasma Torch ◽  
Gas Injection ◽  
Chemical Efficiency ◽  
Reactive Gas

Heat Transfer From the Wall of a Porous Solid Involving Gas Injection and Vaporization

1970 ◽  
Vol 92 (1) ◽  
pp. 153-158 ◽  
Author(s):  
W. J. Frea ◽  
J. H. Hamelink
Keyword(s):  
Heat Transfer ◽  
Experimental Study ◽  
Energy Transfer ◽  
Heat Transport ◽  
Latent Heat ◽  
Atmospheric Pressure ◽  
Gas Injection ◽  
Porous Wall ◽  
Porous Solid ◽  
Graphite Cylinder

An experimental study was made of heat transfer with gas injection through a porous wall into a pool of liquid, including vaporization effects. Air bubbling from the surface of a graphite cylinder into water at atmospheric pressure was used. It was possible to determine limits on energy transfer due to convection and to latent heat transport. It was found that under some conditions it was possible to operate the system with the surface rejecting heat while at temperatures less than that of the bulk pool liquid.

Epitaxial Silicon Layers Made by Reduced Pressure/Temperature CVD

1988 ◽  
Vol 129 ◽  
Author(s):  
J.L. Regolini ◽  
D. Bensahel ◽  
J. Mercier ◽  
C. D'Anterroches ◽  
A. Perio
Keyword(s):  
Thermal Processing ◽  
Atmospheric Pressure ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Epitaxial Silicon ◽  
Reduced Pressure ◽  
Selective Epitaxial Growth ◽  
Main Decomposition ◽  
Rate Limiting ◽  
Reactive Gas

ABSTRACTIn a rapid thermal processing system working at a total pressure of a few Torr, we have obtained selective epitaxial growth of silicon at temperatures as low as 650°C. When using SiH2Cl2 (DCS) as the reactive gas, no addition of HCl is needed. Nevertheless, using SiH4 below 950°C a small amount of HCl should be added.Some kinetic aspects of the two systems, DCS/HCI/H2 and SiH4/HCl/H2, are presented and discussed. For the DCS system, we show that the rate-limiting reactions are slightly different from those commonly accepted in the literature, where the results are from systems working at atmospheric pressure or in the 20-100 Torr range.Our model is based on the main decomposition of DCS, SiH2Cl→SiHCl + HCl, instead of the widely accepted reaction SiH2Cl2→SiCl2 + H2. This is the main reason why no extra HCl is required in the DCS/H2 system to obtain full selectivity from above 1000°C down to 650°C.

Experimental study on inactivation of Escherichia coli by atmospheric pressure non-equilibrium plasma combined with photocatalysis

2018 ◽  
Vol 57 (12) ◽  
pp. 126203
Author(s):  
Rongzhao Jia ◽  
Liang Zou ◽  
Tong Zhao ◽  
Xiaolong Wang ◽  
Yuantao Zhang ◽  
...  
Keyword(s):  
Escherichia Coli ◽  
Experimental Study ◽  
Atmospheric Pressure ◽  
Equilibrium Plasma ◽  
Non Equilibrium

Generation of microplasma jet at atmospheric pressure using a modified waveguide-based plasma torch

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5275-5279 ◽  
Author(s):  
S. Kanazawa ◽  
R. Daidai ◽  
S. Akamine ◽  
T. Ohkubo
Keyword(s):  
Atmospheric Pressure ◽  
Plasma Torch
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