Developing the gaalas/gaas heterostructure by means of the molecular-beam epitaxy method using the indirect control of the coating growth rate

2017 ◽  
Author(s):  
А.В. Титушкин ◽  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Indirect Control ◽  
Molecular Beam Epitaxy Method ◽  
Coating Growth

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

1998 ◽  
Vol 191 (1-2) ◽  
pp. 31-33 ◽  
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianping Zhang ◽  
Meiying Kong
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Growth ◽  
High Growth Rate ◽  
Gas Source ◽  
Molecular Beam Epitaxy Method

RELAXATION PROCESS OF ELECTORON-HOLE PAIRS IN Yb-DOPED AlAs/GaAs SUPERLATTICE IN HIGH MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1481-1485 ◽  
Author(s):  
TADASHI TAKAMASU ◽  
KOICHI SATO
Keyword(s):  
Rare Earth ◽  
Molecular Beam Epitaxy ◽  
Magnetic Fields ◽  
Relaxation Process ◽  
Molecular Beam ◽  
High Magnetic Fields ◽  
Molecular Beam Epitaxy Method ◽  
Rare Earth Doped ◽  
Photoluminescence Peak ◽  
The Rare Earth

The rare-earth doped AlAs/GaAs superlattices were grown by molecular beam epitaxy method. From the magneto-oscillation of the interband broad photoluminescence peak, electrons accumulated in the well were analyzed.

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

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