scholarly journals Study of the Ferromagnetic Magnetite Resonance (Fe3O4) Forms of Thin Films Using Micromagnetic Simulation

Author(s):  
Syefira Salsabila ◽  
Lutfi Rohman ◽  
Endhah Purwandari

Fe3O4 is the strongest magnet among other iron oxides. Magnetite Fe3O4 is applied as a permanent magnet. The hysteresis curve of the permanent magnet Fe3O4 has a coercivity field that is not too large so that the material has a good chance to be applied as an absorbent material for RADAR waves. Micromagnetic simulations were carried out on Fe3O4 material in the form of thin film against hysteresis curves and ferromagnetic resonances at various thickness variations and side length variations, and the relationship was seen with changes in the bandwidth of the radar wave absorption frequency if the thickness variation of the simulated material had the same multiple as the experimental material. The thickness variations in this study were 60 nm, 90 nm, and 120 nm, where the variations in the experiment were 0.6 mm, 0.9 mm, and 1.2 mm. Micromagnetic simulation runs were performed to obtain the hysteresis curve and resonance frequency of the Fe3O4 material. The simulation results show that the resonant frequency increases with increasing thickness (fixed side length). Meanwhile, the relationship between the resonant frequency and the side length of the thin film is inversely related. Changes in the resonant frequency of Fe3O4 material are closely related to changes in the absorption frequency band of Fe3O4 material. The hysteresis curve obtained shows that the Fe3O4 material is a hard magnetic material. Changes in the resonant frequency of Fe3O4 material are closely related to changes in the absorption frequency band of Fe3O4 material. The hysteresis curve obtained shows that the Fe3O4 material is a hard magnetic material. Changes in the resonant frequency of Fe3O4 material are closely related to changes in the absorption frequency band of Fe3O4 material. The hysteresis curve obtained shows that the Fe3O4 material is a hard magnetic material.

2009 ◽  
Vol 58 (6) ◽  
pp. 3844
Author(s):  
Wu Jun-Fang ◽  
Sun Ming-Zhao ◽  
Zhang Chun-Min

Author(s):  
Pornvitoo Rittinon ◽  
Ken Suzuki ◽  
Hideo Miura

Copper thin films are indispensable for the interconnections in the advanced electronic products, such as TSV (Trough Silicon Via), fine bumps, and thin-film interconnections in various devices and interposers. However, it has been reported that both electrical and mechanical properties of the films vary drastically comparing with those of conventional bulk copper. The main reason for the variation can be attributed to the fluctuation of the crystallinity of grain boundaries in the films. Porous or sparse grain boundaries show very high resistivity and brittle fracture characteristic in the films. Thus, the thermal conductivity of the electroplated copper thin films should be varied drastically depending on their micro texture based on the Wiedemann-Franz’s law. Since the copper interconnections are used not only for the electrical conduction but also for the thermal conduction, it is very important to quantitatively evaluate the crystallinity of the polycrystalline thin-film materials and clarify the relationship between the crystallinity and thermal properties of the films. The crystallinity of the interconnections were quantitatively evaluated using an electron back-scatter diffraction method. It was found that the porous grain boundaries which contain a significant amount of vacancies increase the local electrical resistance in the interconnections, and thus, cause the local high Joule heating. Such porous grain boundaries can be eliminated by control the crystallinity of the seed layer material on which the electroplated copper thin film is electroplated.


1997 ◽  
Vol 471 ◽  
Author(s):  
W. Eccleston

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.


Measurement ◽  
2019 ◽  
Vol 135 ◽  
pp. 503-519 ◽  
Author(s):  
Shiwei Liu ◽  
Yanhua Sun ◽  
Linsong He ◽  
Xiaoyuan Jiang ◽  
Yihua Kang

2021 ◽  
Vol 9 ◽  
Author(s):  
Inhee Maeng ◽  
Hiroshi Tanaka ◽  
Valynn Katrine Mag-usara ◽  
Makoto Nakajima ◽  
Masakazu Nakamura ◽  
...  

All mixed hybrid perovskite (MA(Sn, Pb)(Br,I)3) thin film was fabricated by sequential vacuum evaporation method. To optimize the first layer with PbBr2 and SnI2, we performed different annealing treatments. Further, MA(Sn, Pb)(Br, I)3 thin film was synthesized on the optimized first layer by evaporating MAI and post-annealing. The formed hybrid perovskite thin film exhibited absorptions at 1.0 and 1.7 THz with small absorbance (<10%). Moreover, no chemical and structural defect-incorporated absorption was found. In this study, the possibility of changing terahertz absorption frequency through the mixture of metal cations (Sn+ and Pb+) and halogen anions (Br− and I−) was verified.


1991 ◽  
Vol 78 (4) ◽  
pp. 317-320 ◽  
Author(s):  
Ying-chang Yang ◽  
Xiao-dong Zhang ◽  
Lin-shu Kong ◽  
Qi Pan ◽  
Sen-lin Ge

2013 ◽  
Vol 723 ◽  
pp. 136-140
Author(s):  
Yi Hua Nie ◽  
Ping Liu ◽  
Li Xin Xu ◽  
Jie Ding

In this paper, rolling thin film oven is used to heat No.70 road asphalt to simulate asphalt aging. Six aging time tests of 0min, 40min, 85min, 180min, 240min and 300min were carried and the relationship of asphalt performance indexes before and after aging was got as well as four components. The analysis results indicate that: as the aging time increases, change processes of all performance indexes followed curve of index and the correlation coefficient reached significant level. Changing regularity of asphalt four components are also got: the contents of saturate and aromatic both decrease with the aging time increasing, while asphaltene content and resin content increased and the increasing speed of resin is faster. Key words: No.70 road asphalt; four components; performance index; aging.


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