Analytical Treatment of Field-Effect Conduction in Polysilicon thin film Transistors

MRS Proceedings ◽

10.1557/proc-471-149 ◽

1997 ◽

Vol 471 ◽

Cited By ~ 1

Author(s):

W. Eccleston

Keyword(s):

Thin Film ◽

Grain Size ◽

Thin Film Transistors ◽

Field Effect ◽

Drain Current ◽

High Current ◽

Analytical Treatment ◽

Channel Mobility ◽

Current Region ◽

The Relationship

ABSTRACTThe drift of electrons in the channels of Thin Film Transistors is analysed for discrete grains separated by grain boundaries containing amorphous silicon. The model provides the relationship channel mobility and grain size. The relationship between drain current and the terminal voltages is also predicted. The model relates to normal high current region of transistor operation.

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A novel polymer as a functional dielectric layer for OTFTs to improve the grain size of the pentacene semiconductor

Polymer Chemistry ◽

10.1039/c5py01982f ◽

2016 ◽

Vol 7 (11) ◽

pp. 2143-2150 ◽

Cited By ~ 8

Author(s):

Yao Li ◽

He Wang ◽

Xuesong Wang ◽

Zuosen Shi ◽

Donghang Yan ◽

...

Keyword(s):

Thin Film ◽

Grain Size ◽

Charge Carrier ◽

Dielectric Layer ◽

Thin Film Transistors ◽

Carrier Mobility ◽

Charge Carrier Mobility ◽

Single Variable ◽

Dielectric Layers ◽

The Relationship

A series of novel polymers as functional dielectric layers for pentacene thin-film transistors was synthesized and investigated to explore the relationship between the grain size and the charge carrier mobility with a single variable.

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P-channel Polycrystalline Silicon Thin Film Transistors on Steel Foil Substrates

MRS Proceedings ◽

10.1557/proc-664-a17.2 ◽

2001 ◽

Vol 664 ◽

Cited By ~ 2

Author(s):

Ming Wu ◽

Sigurd Wagner

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Field Effect ◽

Drain Current ◽

Silicon Thin Film ◽

Polysilicon Films ◽

Source Voltage ◽

Steel Substrates ◽

Hydrogenated Amorphous

ABSTRACTWe fabricated self-aligned polycrystalline silicon (polysilicon) thin film transistors on flexible steel substrates. The polysilicon was formed by furnace crystallization of hydrogenated amorphous silicon at 950°C/20sec or 750°C/2min. The TFTs made from these polysilicon films have hole field effect mobilities in the linear regime of 22 cm2·V−1s−1 (950°C) and 14 cm2·V−1s−1 (750°C). The OFF current at 10 V drain-source voltage is 10−10A and the drain current ON/OFF ratio is ∼106.

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Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

Materials ◽

10.3390/ma11091672 ◽

2018 ◽

Vol 11 (9) ◽

pp. 1672 ◽

Cited By ~ 3

Author(s):

Alwin Daus ◽

Songyi Han ◽

Stefan Knobelspies ◽

Giuseppe Cantarella ◽

Gerhard Tröster

Keyword(s):

Thin Film ◽

Flexible Electronics ◽

Thin Film Transistors ◽

Field Effect ◽

Drain Current ◽

Cmos Technology ◽

Effective Field ◽

Oxide Semiconductor ◽

Field Effect Mobility ◽

P Type

In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge 2 Sb 2 Te 5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works on GST TFTs have typically shown poor current modulation capabilities with ON/OFF ratios ≤20 and non-saturating output characteristics. By reducing the GST thickness to 5 nm, we achieve ON/OFF ratios up to ≈300 and a channel pinch-off leading to drain current saturation. We compare the GST TFTs in their amorphous (as deposited) state and in their crystalline (annealed at 200 °C) state. The highest effective field-effect mobility of 6.7 cm 2 /Vs is achieved for 10-nm-thick crystalline GST TFTs, which have an ON/OFF ratio of ≈16. The highest effective field-effect mobility in amorphous GST TFTs is 0.04 cm 2 /Vs, which is obtained in devices with a GST thickness of 5 nm. The devices remain fully operational upon bending to a radius of 6 mm. Furthermore, we find that the TFTs with amorphous channels are more sensitive to bias stress than the ones with crystallized channels. These results show that GST semiconductors are compatible with flexible electronics technology, where high-performance p-type TFTs are strongly needed for the realization of hybrid complementary metal-oxide-semiconductor (CMOS) technology in conjunction with popular n-type oxide semiconductor materials.

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Grain Size Dependence of Field-Effect Mobility in Pentacene-Based Thin-Film Transistors

10.7567/ssdm.2004.f-9-5 ◽

2004 ◽

Author(s):

Chiang Ooh Tang ◽

Masatoshi Kitamura ◽

Yasuhiko Arakawa

Keyword(s):

Thin Film ◽

Grain Size ◽

Thin Film Transistors ◽

Field Effect ◽

Size Dependence ◽

Field Effect Mobility

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Effect of Illumination on Organic Polymer Thin-Film Transistors

MRS Proceedings ◽

10.1557/proc-771-l10.17 ◽

2003 ◽

Vol 771 ◽

Cited By ~ 3

Author(s):

Michael C. Hamilton ◽

Sandrine Martin ◽

Jerzy Kanicki

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Drain Current ◽

Charge Carriers ◽

Electrical Performance ◽

Organic Polymer ◽

Light Illumination ◽

Polymer Thin Film ◽

Channel Region ◽

White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽

10.1039/d1nr02911h ◽

2021 ◽

Author(s):

Keonwon Beom ◽

Jimin Han ◽

Hyun-Mi Kim ◽

Tae-Sik Yoon

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Hafnium Oxide ◽

Synaptic Weight ◽

Drain Current ◽

Gate Insulator ◽

Channel Layer ◽

Indium Zinc Oxide ◽

Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

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