scholarly journals Isochronal Studies of the Structural and Electrical Properties of CdTe Films

2011 ◽  
Vol 8 (1) ◽  
pp. 134-140
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
High Vacuum ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
P Type

The paper reports the influence of annealing temperature under vacuum for one hour on the some structural and electrical properties of p-type CdTe thin films were grown at room temperature under high vacuum by using thermal evaporation technique with a mean thickness about 600nm. X-ray diffraction analysis confirms the formation of CdTe cubic phase at all annealing temperature. From investigated the electrical properties of CdTe thin films, the electrical conductivity, the majority carrier concentration, and the Hall mobility were found increase with increasing annealing temperatures.

scholarly journals Structural and Electrical Properties Dependence on Annealing Temperature of Bi Thin Films

2014 ◽  
Vol 11 (3) ◽  
pp. 1257-1260
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
P Type

In this work the effect of annealing temperature on the structure and the electrical properties of Bi thin films was studied, the Bi films were deposited on glass substrates at room temperature by thermal evaporation technique with thickness (0.4 µm) and rate of deposition equal to 6.66Å/sec, all samples are annealed in a vacuum for one hour. The X-ray diffraction analysis shows that the prepared samples are polycrystalline and it exhibits hexagonal structure. The electrical properties of these films were studied with different annealing temperatures, the d.c conductivity for films decreases from 16.42 ? 10-2 at 343K to 10.11?10-2 (?.cm)-1 at 363K. The electrical activation energies Ea1 and Ea2 increase from 0.031 to 0.049eV and from 0.096 to 0. 162 eV with increasing of annealing temperature from 343K to 363K, respectively. Hall measurements showed that all the films are p-type.

scholarly journals Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS

2018 ◽  
Vol 15 (2) ◽  
pp. 192-197
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Solar Cell ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Annealing Temperatures ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
Vacuum Evaporation Technique

Thin films of CdTe were prepared with thickness (500, 1000) nm on the glass substrate by vacuum evaporation technique at room temperature then treated different annealing temperatures (373,473,and 573)K for one hour. Results of the Hall Effect and the electrical conductivity of (I-V) characteristics were measured in darkness and light.at different annealing temperature results show that the thin films have ability to manufacture solar cells, and found that the efficient equal to (2.18%) for structure solar cell (Algrid / CdS / CdTe /glass/ Al) and the efficient equal to (1.12%) for structure solar cell (Algrid / CdS / CdTe /Si/ Al) with thick ness of (1000) nm with CdTe thin films at RT.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

Structural and Electrical Properties of P—Type ZnO Thin Films

2008 ◽  
Author(s):  
H. Abdul Hamid ◽  
M. J. Abdullah ◽  
A. Abdul Aziz ◽  
H. B. Senin ◽  
G. Carini ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Zno Thin Films ◽  
Structural And Electrical Properties ◽  
P Type

scholarly journals Gamma Irradiation Effects on n-ZnSe/n-Si Isotype Heterojunctions

Silicon ◽  
2021 ◽  
Author(s):  
Indudhar Panduranga Vali ◽  
Rashmitha Keshav ◽  
M. Rajeshwari ◽  
K. S. Vaishnavi ◽  
M. G. Mahesha ◽  
...  
Keyword(s):  
Thin Films ◽  
Gamma Irradiation ◽  
Lattice Mismatch ◽  
Thermionic Emission ◽  
X Ray Diffraction ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
Gamma Irradiated ◽  
Znse Thin Films ◽  
Induced Defects

AbstractTo get an insight into the isotype heterojunction (IHJ) properties, the influence of gamma irradiation (GI) on the structural and electrical properties of n-ZnSe/n-Si has been presented. The ZnSe thin films were deposited onto the n-Si substrate by thermal evaporation technique. The X-ray diffraction (XRD) studies revealed the nanocrystalline nature of ZnSe thin films with prominent (111) orientation. The gamma irradiated samples displayed no crystallographic phase transformation up to 10 kGy irradiation doses. But noticeable and inconsistent modifications in the different lattice parameters were observed due to irradiation-induced effects. From the analysis of I-V characteristics, it has been found a similar trend in the variation of lattice mismatch, Schottky barrier height and interface trap parameter at different irradiation doses. Thus demonstrating the poor rectification properties of n-ZnSe/n-Si IHJs due to intrinsic and gamma-induced defects, and their role in the space charge limited conduction (SCLC) mechanism that significantly dominating over the thermionic emission (TE) mechanism across the barrier.

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