Structural and Electrical Properties of Colossal Magnetoresistive LSMO Thin Films Prepared by KrF Laser Ablation Method

2001 ◽  
Vol 666 ◽  
Author(s):  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Jagdish Narayan ◽  
Alexander M. Grishin
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Colossal Magnetoresistive ◽  
Laser Ablation Method ◽  
Structural And Electrical Properties

ABSTRACTWe prepared colossal magnetoresistive La0.8Sr0.2MnO3 thin films on the MgO, SrTiO3 and LaAlO3 single crystal substrates using KrF excimer pulsed laser ablation technique. The structural and electrical properties of the La0.8Sr0.2MnO3 thin films which were strained by the lattice mismatch are reported. The in-plane lattice mismatch between the La0.8Sr0.2MnO3 and MgO, SrTiO3 and LaAlO3 substrates are -7.8 %, -0.5 % and +2.3 %, respectively. The X-ray diffraction spectra of the films exhibited c-axis orientation. In the case of the La0.8Sr0.2MnO3 / LaAlO3 thin films with thickness over 100 nm, the divided (00l) peaks were observed. The surface morphology and transport property of the strongly stressed La0.8Sr0.2MnO3 / LaAlO3 were different from those of La0.8Sr0.2MnO3 / MgO and La0.8Sr0.2MnO3 / SrTiO3thin films.

Textured Superconducting Thin Films of Bismuth Cuprate by Laser Ablation Method

1989 ◽  
Vol 169 ◽  
Author(s):  
Ashok Kumar ◽  
L. Ganapathi ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Bulk Material ◽  
Lattice Parameter ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Laser Ablation Method ◽  
Zero Resistance ◽  
Diffraction Patterns

AbstractWe have prepared highly textured superconducting thin films from Bi1.5pb0.5Ca3Sr2Cu4Ox (2324) on (100) YS-ZrO2 (Yttria stabilized zirconia) and Bi1.5Pb0.5Ca2Sr2Cu3°x (2223) on LaAlC-3 (100) and MgO (100) substrates at 650°C by pulsed laser ablation method.These films showed 2212 type of phase of the (BiPb)2(Ca,Sr)n+1CunO2n+4+5 family with onset transition temperature ( Tc ) ~ 110 K, confirming our earlier observations of 110 K superconductivity in a n = 2 bulk material. Thin films deposited from 2324 bulk target on YS-Z1O2 showed zero resistance temperature (Tco ) of 68 K but post annealing for one hour at 400°C in oxygen improved Tco from 68 K to 82 K. Thin films from 2223 target on LaAlO3 ( 100 ) and MgO ( 100 ) exhibited a Tco of 65 K and 74 K respectively while onset remained the same at 110 K. Further annealing at 400°C for one hour in oxygen did not show any improvement in Tco. X-ray diffraction (XRD), scanning electron microscopy (SEM) and Rutherford backscattering (RBS) channeling studies were performed on these films for correlation between crystal structure, microstructure and superconducting properties. X-ray diffraction patterns indicated 2212 type phase with a= 5.39 Å and c=30.76 Å; preferential orientation of c-axis perpendicular to the substrate was observed. The lattice parameter and x-ray diffraction patterns were found to be invariant with annealing treatments.

scholarly journals Structural and Electrical Properties Dependence on Annealing Temperature of Bi Thin Films

2014 ◽  
Vol 11 (3) ◽  
pp. 1257-1260
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Structural And Electrical Properties ◽  
Evaporation Technique ◽  
P Type

In this work the effect of annealing temperature on the structure and the electrical properties of Bi thin films was studied, the Bi films were deposited on glass substrates at room temperature by thermal evaporation technique with thickness (0.4 µm) and rate of deposition equal to 6.66Å/sec, all samples are annealed in a vacuum for one hour. The X-ray diffraction analysis shows that the prepared samples are polycrystalline and it exhibits hexagonal structure. The electrical properties of these films were studied with different annealing temperatures, the d.c conductivity for films decreases from 16.42 ? 10-2 at 343K to 10.11?10-2 (?.cm)-1 at 363K. The electrical activation energies Ea1 and Ea2 increase from 0.031 to 0.049eV and from 0.096 to 0. 162 eV with increasing of annealing temperature from 343K to 363K, respectively. Hall measurements showed that all the films are p-type.

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

Structural and electrical properties of lanthanum oxide thin films deposited by laser ablation

2002 ◽  
Vol 197-198 ◽  
pp. 522-526 ◽  
Author(s):  
M.F Vignolo ◽  
S Duhalde ◽  
M Bormioli ◽  
G Quintana ◽  
M Cervera ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Electrical Properties ◽  
Lanthanum Oxide ◽  
Oxide Thin Films ◽  
Structural And Electrical Properties

Effect of structural in-depth heterogeneities on electrical properties of Pb(Zr0.52Ti0.48) O3 thin films as revealed by nano-beam X-ray diffraction

2016 ◽  
Vol 120 (10) ◽  
pp. 104101 ◽  
Author(s):  
N. Vaxelaire ◽  
V. Kovacova ◽  
A. Bernasconi ◽  
G. Le Rhun ◽  
M. Alvarez-Murga ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Structural and electrical properties of Cu-doped Ni–Zn nanocrystalline ferrites for MLCI applications

2017 ◽  
Vol 31 (33) ◽  
pp. 1750318 ◽  
Author(s):  
D. Venkatesh ◽  
K. V. Ramesh
Keyword(s):  
Electrical Properties ◽  
Cation Distribution ◽  
Tetrahedral Site ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Sem Images ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Phase Spinel ◽  
Diffraction Patterns

Polycrystalline Cu substituted Ni–Zn ferrites with chemical composition Ni[Formula: see text]Zn[Formula: see text]-Cu[Formula: see text]Fe2O4 (x = 0.00 to 0.25 in steps of 0.05) have been prepared by citrate gel autocombustion method. The samples for electrical properties have been sintered at 900[Formula: see text]C for 4 h. The X-ray diffraction patterns of all samples indicate the formation of single phase spinel cubic structure. The value of lattice parameter is decreases with increasing Cu concentration. The estimated cation distribution can be derived from X-ray diffraction intensity calculations and IR spectra. The tetrahedral and octahedral bond lengths, bond angles, cation–cation and cation–anion distances were calculated by using experimental lattice parameter and oxygen positional parameters. It is observed that Cu ions are distributed in octahedral site and subsequently Ni and Fe ions in tetrahedral site. The grain size of all samples has been calculated by Scanning Electron Microscopy (SEM) images. The variations in DC electrical resistivity and dielectric constant have been explained on the basis of proposed cation distribution.

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