scholarly journals Measurement of polymer film thickness based on throretical calculation of Rh K.ALPHA. X-ray Compton scattering intensity.

1994 ◽  
Vol 43 (5) ◽  
pp. 371-376
Author(s):  
Hirotomo OCHI ◽  
Tadahiro SHIOTA ◽  
Makoto NISHINO
Keyword(s):  
Film Thickness ◽  
Polymer Film ◽  
Compton Scattering ◽  
Scattering Intensity ◽  
X Ray

Effect of UV radiation damage in air on polymer film thickness, studied by soft X-ray spectromicroscopy

2018 ◽  
Vol 20 (24) ◽  
pp. 16625-16640 ◽  
Author(s):  
Lis G. A. Melo ◽  
Adam P. Hitchcock ◽  
Darija Susac ◽  
Juergen Stumper ◽  
Viatcheslav Berejnov
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Methyl Methacrylate ◽  
Polymer Film ◽  
Radiation Damage ◽  
Uv Radiation ◽  
Spectral Reflectance ◽  
Perfluorosulfonic Acid ◽  
X Ray ◽  
Scanning Transmission

The thicknesses of thin films of polystyrene (PS), poly(methyl methacrylate) (PMMA), and perfluorosulfonic acid (PFSA) were measured by Ultraviolet Spectral Reflectance (UV-SR) and Scanning Transmission X-ray Microscopy (STXM).

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Effect on Compton Scattering Spectra by Hermite–Gaussian Light

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 650
Author(s):  
Akane Agui ◽  
Hiroshi Sakurai ◽  
Naruki Tsuji ◽  
Haruka Ito ◽  
Kiyofumi Nitta
Keyword(s):  
Compton Scattering ◽  
X Rays ◽  
Harmonic Order ◽  
X Ray ◽  
Scattering Spectra

In this study, we measured the Compton scattering spectra of Al, Ag and Au metals changing the harmonic order of X-rays from an undulator. The width of the Compton scattered X-ray spectrum changed depending on the harmonic order of X-rays. This indicates that Compton scattering spectra shape reflects a momentum perpendicular to the traveling direction in Hermite–Gaussian (HG) light.

scholarly journals Controlling Film Thickness Distribution by Magnetron Sputtering with Rotation and Revolution

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 599
Author(s):  
Handan Huang ◽  
Li Jiang ◽  
Yiyun Yao ◽  
Zhong Zhang ◽  
Zhanshan Wang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Multilayer Film ◽  
Thickness Distribution ◽  
Parabolic Cylinder ◽  
Particle Model ◽  
Planetary Motion ◽  
X Rays ◽  
X Ray ◽  
Sputtering System

The laterally graded multilayer collimator is a vital part of a high-precision diffractometer. It is applied as condensing reflectors to convert divergent X-rays from laboratory X-ray sources into a parallel beam. The thickness of the multilayer film varies with the angle of incidence to guarantee every position on the mirror satisfies the Bragg reflection. In principle, the accuracy of the parameters of the sputtering conditions is essential for achieving a reliable result. In this paper, we proposed a precise method for the fabrication of the laterally graded multilayer based on a planetary motion magnetron sputtering system for film thickness control. This method uses the fast and slow particle model to obtain the particle transport process, and then combines it with the planetary motion magnetron sputtering system to establish the film thickness distribution model. Moreover, the parameters of the sputtering conditions in the model are derived from experimental inversion to improve accuracy. The revolution and rotation of the substrate holder during the final deposition process are achieved by the speed curve calculated according to the model. Measurement results from the X-ray reflection test (XRR) show that the thickness error of the laterally graded multilayer film, coated on a parabolic cylinder Si substrate, is less than 1%, demonstrating the effectiveness of the optimized method for obtaining accurate film thickness distribution.

SUMMARY OF WORKING GROUP 4: APPLICATIONS OF HIGH BRIGHTNESS BEAMS TO ADVANCED ACCELERATORS AND LIGHTS SOURCES

2007 ◽  
Vol 22 (23) ◽  
pp. 4265-4269
Author(s):  
MITSURU UESAKA ◽  
ANDREA ROSSI
Keyword(s):  
Compton Scattering ◽  
Working Group ◽  
High Brightness ◽  
X Ray ◽  
Group 4 ◽  
Wakefield Acceleration ◽  
Plasma Wakefield

We categorized 16 contributions into the three sub-fields. Those are 1. Compton scattering X-ray sources, 2. FEL and RF photoinjectors and 3. Plasma wakefield acceleration/innovative acceleration schemes. We performed a half day working group for each sub-field. The titles and summaries of the contributions appear in the article.

Strain Analysis in Thin La1−xCaxMnO3 Films by Grazing Incidence X-ray Scattering

1999 ◽  
Vol 602 ◽  
Author(s):  
M. Petit ◽  
L. J. Martinez-Miranda ◽  
M. Rajeswari ◽  
A. Biswas ◽  
D. J. Kang ◽  
...  
Keyword(s):  
Film Thickness ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Strain Analysis ◽  
Grazing Incidence ◽  
Relaxation Processes ◽  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

AbstractWe have performed depth profile analyses of the lattice parameters in epitaxial thin films of La1−xCaxMno3 (LCMO), where x = 0.33 or 0.3, to understand the evolution of strain relaxation processes in these materials. The analyses were done using Grazing Incidence X-ray Scattering (GIXS) on films of different thicnesses on two different substrates, (100) oriented LaAlO3 (LAO), with a lattice mismatch of ∼2% and (110) oriented NGO, with a lattice mismatch of less than 0.1%. Films grown on LAO can exhibit up to three in-plane strained lattice constants, corresponding to a slight orthorhombic distortion of the crystal, as well as near-surface and columnar lattice relaxation. As a function of film thickness, a crossover from a strained film to a mixture of strained and relaxed regions in the film occurs in the range of 700 Å. The structural evolution at this thickness coincides with a change in the resistivity curve near the metalinsulator transition. The in-plane compressive strain has a range of 0.2 – 1.5%, depending on the film thickness for filsm in the range of 400 - 1500 A.

An x‐ray spectrometer for Compton scattering

1992 ◽  
Vol 63 (1) ◽  
pp. 1190-1193 ◽  
Author(s):  
Y. Sakurai ◽  
M. Ito ◽  
T. Urai ◽  
Y. Tanaka ◽  
N. Sakai ◽  
...  
Keyword(s):  
Compton Scattering ◽  
X Ray
Sign in / Sign up

Export Citation Format

Share Document