scholarly journals Effect of Polaron Hoping on Electrical Properties of Magneto Electric Composites

2021 ◽  
Author(s):  
Avinash A Ramteke ◽  
P.K. Chougule
Keyword(s):  
Dielectric Constant ◽  
Cation Distribution ◽  
Conduction Mechanism ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Temperature Coefficient Of Resistance ◽  
Ceramic Method ◽  
Pure Phase ◽  
Silicon And Germanium ◽  
Semiconducting Behavior

Abstract Co0.7-xNixMn0.3Fe2O4 (CNMFO) ferrites with x = 0.00, 0.05, 0.10 and 0.15,PbZr0.52Ti0.48O3(PZT) ferroelectric and 30% CNMFO – 70% PZT magneto electric(ME) composites were synthesized by double sintering ceramic method. XRD confirms pure phase formation for all compositions of ferrite, ferroelectric and ME composites. All compositions of ferrites, ferroelectric and ME composites show negative temperature coefficient of resistance (NTCR) confirming the semiconducting behavior, though the conduction mechanism is quite different than known semiconductors such as, silicon and germanium. The conduction, due to electron hoping in semiconductors against polaron hoping in ferrites is explained. The effect of cation distribution on resistivity of ferrite phase is also discussed. Thus, effect of polaron hoping and cation distribution on resistivity and dielectric constant of ferroelectric and ME composites has been discussed. Effective resistance of ME composites due to combined resistance of the constituent phases has also been studied.

Low temperature dielectric properties and NTCR behavior of the BaFe0.5Nb0.5O3 double perovskite ceramic

2020 ◽  
Vol 22 (5) ◽  
pp. 2986-2998 ◽  
Author(s):  
Vijay Khopkar ◽  
Balaram Sahoo
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Temperature Coefficient ◽  
Negative Temperature Coefficient ◽  
Double Perovskite ◽  
Negative Temperature ◽  
Lead Free ◽  
Temperature Coefficient Of Resistance ◽  
Perovskite Ceramic

The microstructure and low-temperature dielectric properties of lead-free BaFe0.5Nb0.5O3 ceramics exhibiting a negative temperature coefficient of resistance behavior.

scholarly journals Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
M. Mirigliano ◽  
S. Radice ◽  
A. Falqui ◽  
A. Casu ◽  
F. Cavaliere ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Temperature Coefficient ◽  
Resistive Switching ◽  
Electrical Conduction ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
High Density ◽  
Gold Films ◽  
Temperature Coefficient Of Resistance ◽  
Nanostructured Gold

AbstractWe report the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in nanostructured gold films above the electrical percolation and in strong-coupling regime, from room down to cryogenic temperatures (24 K). Nanostructured continuous gold films are assembled by supersonic cluster beam deposition of Au aggregates formed in the gas phase. The structure of the cluster-assembled films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries and with a large number of lattice defects. Our data indicates that space charge limited conduction and Coulomb blockade are at the origin of the anomalous electrical behavior. The high density of extended defects and grain boundaries causes the localization of conduction electrons over the entire investigated temperature range.

Tellurium-modified silicon nanowires with a large negative temperature coefficient of resistance

2012 ◽  
Vol 101 (13) ◽  
pp. 133111 ◽  
Author(s):  
Li Yang ◽  
Haiyang Lin ◽  
Tao Wang ◽  
Shiyong Ye ◽  
Mingwang Shao ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Silicon Nanowires ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Temperature Coefficient Of Resistance

scholarly journals Studies on Semiconducting Properties of Lead Sulphide and Lead Selenide Films

1966 ◽  
Vol 21 (9) ◽  
pp. 1462-1467
Author(s):  
A. Goswami ◽  
S. S. Koli
Keyword(s):  
Film Thickness ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Mean Free Path ◽  
Structure Model ◽  
Temperature Coefficient Of Resistance ◽  
Lead Sulphide ◽  
Semiconducting Properties

Some studies have been made on the semiconducting properties viz. resistivity (ρ), activation energy (ΔE), HALL Coefficient (RH) , mean free path (l0), thermoelectric power (α) etc. of PbS and PbSe films of thicknesses ranging from 1500 A to 35 000 A. The activation energies varied from 0.6 to 1.6 eV and 0.7 to 0.9 eV respectively for PbS and PbSe films depending on film thickness and temperature range. Thinner films had higher ΔE values. The thermoelectric power not only varied but also changed its sign from positive to negative with increase of temperature. Thinner films had greater α than corresponding thicker films. The HALL coefficient and mobility increased particularly for PbSe films both with increase of film thickness and substrate temperature. The negative temperature coefficient of resistance slowly decreased and again increased passing through a minimum with rise of temperature. The semiconduction behaviour of thin films is better explained on the island structure model than by SONDHEIMER’S theory.

Negative temperature coefficient of resistance in a crystalline compound

2008 ◽  
Vol 84 (4) ◽  
pp. 47007 ◽  
Author(s):  
Abhishek Pandey ◽  
Chandan Mazumdar ◽  
R. Ranganathan ◽  
Molly De Raychaudhury ◽  
T. Saha-Dasgupta ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Crystalline Compound ◽  
Temperature Coefficient Of Resistance

scholarly journals Structure, dielectric and electrical properties of relaxor lead-free double perovskite: Nd2NiMnO6

2019 ◽  
Vol 13 (1) ◽  
pp. 1-11 ◽  
Author(s):  
Rutuparna Das ◽  
Ram Choudhary
Keyword(s):  
Ac Conductivity ◽  
Negative Temperature Coefficient ◽  
Complex Impedance ◽  
Double Perovskite ◽  
Negative Temperature ◽  
Solid State Reaction Method ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Impedance Data ◽  
Nyquist Plots

In this paper, dielectric relaxor, impedance, AC conductivity and electrical modulus of double perovskite Nd2NiMnO6, prepared by a solid state reaction method and sintered at 1250?C, have been reported in the wide temperature (25-150?C) and frequency (1 kHz-1MHz) ranges. From the preliminary X-ray structural analysis, it is found that the structure of the material is monoclinic. In the study of the temperature dependence of the dielectric constant, the relaxor behaviour of the material is observed. Such type of behaviour is explained by a modified Curie-Weiss and a Vogel-Fulcher law. By analysing Nyquist plots, the existence of grain and grain boundary effects is established. The non-Debye type of relaxation is investigated by the analysis of complex impedance and the modulus data. From the study of impedance data, it is found that the grain resistance is reduced with the increase in temperature indicating the existence of negative temperature coefficient of resistance (NTCR) behaviour in the material which also matches with temperature versus AC conductivity plots. From these results, it may be concluded that this compound may have extreme potential for different high temperature applications.

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