scholarly journals Low-temperature Direct Bonding of Inp and Diamond Substrates Under Atmospheric Conditions

2021 ◽  
Author(s):  
Takashi Matsumae ◽  
Ryo Takigawa ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Eiji Higurashi
Keyword(s):  
Low Temperature ◽  
Heat Dissipation ◽  
Surface Cleaning ◽  
Diamond Surface ◽  
Atmospheric Conditions ◽  
Low Temperature Annealing ◽  
Power Operations ◽  
Inp Substrate ◽  
Bonding Method ◽  
Inp Surface

Abstract An InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

scholarly journals Low-temperature direct bonding of InP and diamond substrates under atmospheric conditions

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Takashi Matsumae ◽  
Ryo Takigawa ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Eiji Higurashi
Keyword(s):  
Low Temperature ◽  
Heat Dissipation ◽  
Surface Cleaning ◽  
Diamond Surface ◽  
Atmospheric Conditions ◽  
Low Temperature Annealing ◽  
Power Operations ◽  
Inp Substrate ◽  
Bonding Method ◽  
Inp Surface

AbstractAn InP substrate was directly bonded on a diamond heat spreader for efficient heat dissipation. The InP surface activated by oxygen plasma and the diamond surface cleaned with an NH3/H2O2 mixture were contacted under atmospheric conditions. Subsequently, the InP/diamond specimen was annealed at 250 °C to form direct bonding. The InP and diamond substrates formed atomic bonds with a shear strength of 9.3 MPa through an amorphous intermediate layer with a thickness of 3 nm. As advanced thermal management can be provided by typical surface cleaning processes followed by low-temperature annealing, the proposed bonding method would facilitate next-generation InP devices, such as transistors for high-frequency and high-power operations.

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

scholarly journals Effects of equal channel angular pressing and heat treatments on the microstructures and mechanical properties of selective laser melted and cast AlSi10Mg alloys

2021 ◽  
Vol 21 (3) ◽  
Author(s):  
Przemysław Snopiński ◽  
Mariusz Król ◽  
Marek Pagáč ◽  
Jana Petrů ◽  
Jiří Hajnyš ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Low Temperature ◽  
Equal Channel Angular Pressing ◽  
Heat Treatments ◽  
Electron Backscattered Diffraction ◽  
Angular Pressing ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Before And After ◽  
The Impact

AbstractThis study investigated the impact of the equal channel angular pressing (ECAP) combined with heat treatments on the microstructure and mechanical properties of AlSi10Mg alloys fabricated via selective laser melting (SLM) and gravity casting. Special attention was directed towards determining the effect of post-fabrication heat treatments on the microstructural evolution of AlSi10Mg alloy fabricated using two different routes. Three initial alloy conditions were considered prior to ECAP deformation: (1) as-cast in solution treated (T4) condition, (2) SLM in T4 condition, (3) SLM subjected to low-temperature annealing. Light microscopy, transmission electron microscopy, X-ray diffraction line broadening analysis, and electron backscattered diffraction analysis were used to characterize the microstructures before and after ECAP. The results indicated that SLM followed by low-temperature annealing led to superior mechanical properties, relative to the two other conditions. Microscopic analyses revealed that the partial-cellular structure contributed to strong work hardening. This behavior enhanced the material’s strength because of the enhanced accumulation of geometrically necessary dislocations during ECAP deformation.

Thin die stacking by low temperature In/ Au IMC based bonding method

2009 ◽  
Author(s):  
Siong Chiew Ong ◽  
Won Kyoung Choi ◽  
C. S. Premachandran ◽  
Ebin Liao ◽  
Ling Xie
Keyword(s):  
Low Temperature ◽  
Die Stacking ◽  
Bonding Method

Improving the Performance of Green LEDs by Low-Temperature Annealing of p-GaN with PdZn

2009 ◽  
Vol 12 (5) ◽  
pp. H185 ◽  
Author(s):  
Ja-Yeon Kim ◽  
Min-Ki Kwon ◽  
Seong-Ju Park ◽  
Sunwoon Kim ◽  
Je Won Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Green Leds
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