Electrical and thermal analysis of Symmetric and Asymmetric metal contacts in Resistive Switching Devices

Mapping Intimacies ◽

10.21203/rs.3.rs-720862/v2 ◽

2021 ◽

Keyword(s):

Thermal Analysis ◽

Resistive Switching ◽

Full Text ◽

Metal Contacts ◽

Switching Devices

Abstract The full text of this preprint has been withdrawn by the authors due to author disagreement with the posting of the preprint. Therefore, the authors do not wish this work to be cited as a reference. Questions should be directed to the corresponding author.

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Interfacial defects in resistive switching devices probed by thermal analysis

Journal of Applied Physics ◽

10.1063/1.3157207 ◽

2009 ◽

Vol 106 (1) ◽

pp. 014504 ◽

Cited By ~ 6

Author(s):

H. K. Lau ◽

C. W. Leung ◽

W. H. Hu ◽

P. K. L. Chan

Keyword(s):

Thermal Analysis ◽

Resistive Switching ◽

Interfacial Defects ◽

Switching Devices

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Resistance state evolution under constant electric stress on a MoS2 non-volatile resistive switching device

RSC Advances ◽

10.1039/d0ra05209d ◽

2020 ◽

Vol 10 (69) ◽

pp. 42249-42255

Author(s):

Xiaohan Wu ◽

Ruijing Ge ◽

Yifu Huang ◽

Deji Akinwande ◽

Jack C. Lee

Keyword(s):

Resistive Switching ◽

Constant Voltage ◽

Switching Device ◽

Current Stress ◽

Electric Stress ◽

State Evolution ◽

Conductive Bridge ◽

Resistance State ◽

Switching Devices

Constant voltage and current stress were applied on MoS2 resistive switching devices, showing unique behaviors explained by a modified conductive-bridge-like model.

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Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Scientific Reports ◽

10.1038/s41598-021-89315-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Sera Kwon ◽

Min-Jung Kim ◽

Kwun-Bum Chung

Keyword(s):

Resistive Switching ◽

High Performance ◽

Sio2 Nanoparticles ◽

Visible Range ◽

Resistive State ◽

Switching Device ◽

Structural Density ◽

Multi Level ◽

Switching Characteristics ◽

Switching Devices

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

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Tin-selenide as a futuristic material: properties and applications

RSC Advances ◽

10.1039/d0ra09807h ◽

2021 ◽

Vol 11 (12) ◽

pp. 6477-6503 ◽

Cited By ~ 1

Author(s):

Manoj Kumar ◽

Sanju Rani ◽

Yogesh Singh ◽

Kuldeep Singh Gour ◽

Vidya Nand Singh

Keyword(s):

Solar Cells ◽

Band Gap ◽

Resistive Switching ◽

Gas Sensors ◽

Material Properties ◽

Topological Insulators ◽

Memory Devices ◽

Tin Selenide ◽

Switching Devices

SnSe/SnSe2 has diverse applications like solar cells, photodetectors, memory devices, Li and Na-ion batteries, gas sensors, photocatalysis, supercapacitors, topological insulators, resistive switching devices due to its optimal band gap.

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