scholarly journals Novel Field Effect Photodiode to Control the Output Photocurrent and Fast Optical Switching

2021 ◽  
Author(s):  
Foad Sharafi ◽  
Ali A. Orouji ◽  
Mohammad Soroosh
Keyword(s):  
Field Effect ◽  
Optical Switching ◽  
Optical Switch ◽  
Incident Light ◽  
Mobility Model ◽  
Absorption Region ◽  
Novel Device ◽  
Fermi Statistic ◽  
Effect Transistor ◽  
Optical Applications

Abstract This paper presents a novel device named Field Effect Photodiode (FEPD) to overcome the inherent drawbacks of PIN Photodiode (PIN-PD) and having an accurate control of the output photocurrent either applying the regular PIN-PD as a fast optical switch that provides a desire I ON /I OFF ratio for optical applications in the nanoscale regime. The proposed device combines a Metal Semiconductor Field Effect Transistor (MESFET) and a regular PIN-PD device that can convert the incident light with photon energy greater than the semiconductor’s bandgap to the regulated photocurrent by changing the gates bias which mounted over the absorption region. Our work include additional models such as bandgap narrowing, Shockley–Read–Hall (SRH), Auger (AUGER), the dependence of the carrier mobility on the doping concentration, Lombardi mobility model (CVT), Fermi statistic dependence (FERMIDIRAC), and Lateral electric field-dependent mobility. To extract and illustrate the electrical and optical results of both the regular PIN-PD and the proposed FEPD in this work, we have used TCAD tools as a semiconductor simulator.

ALL-OPTICAL SWITCHES BASED ON GaAs/AlGaAs QUANTUM DOTS VERTICAL CAVITY

2011 ◽  
Vol 20 (02) ◽  
pp. 205-215 ◽  
Author(s):  
F. D. ISMAIL ◽  
R. JOMTARAK ◽  
C. TEEKA ◽  
J. ALI ◽  
P. P. YUPAPIN
Keyword(s):  
Quantum Dots ◽  
Optical Switching ◽  
Optical Switch ◽  
Novel Device ◽  
All Optical ◽  
Polarization Insensitive ◽  
All Optical Switch ◽  
20 Nm ◽  
Vertical Cavity ◽  
All Optical Switching

In this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. Two essential aspects of this novel device have been investigated, which include the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. The vertical-reflection-type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As and 25 periods for the front and back mirrors, respectively. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, the 65 nm dimension of Si was recommended to deposit within a 20 nm AlAs QW. Results obtained have shown that all-optical switching via the QD excited states has been achieved with a time constant down to 275-fs and over 29.5 nm tunable wavelengths. These results demonstrated that QDs within a vertical cavity have great potential to realize low-power, consumption polarization-insensitive and micrometer-sized switching devices for future optical communication and signal processing systems.

Five-stage free-space optical switching network with field-effect transistor self-electro-optic-effect-device smart-pixel arrays

1994 ◽  
Vol 33 (8) ◽  
pp. 1601 ◽  
Author(s):  
Frederick B. McCormick ◽  
Tom J. Cloonan ◽  
Anthony L. Lentine ◽  
Jose M. Sasian ◽  
Rick L. Morrison ◽  
...  
Keyword(s):  
Free Space ◽  
Field Effect ◽  
Optical Switching ◽  
Field Effect Transistor ◽  
Switching Network ◽  
Free Space Optical ◽  
Electro Optic ◽  
Effect Transistor ◽  
Smart Pixel

Conduction Mechanism Based Model of Organic Field Effect Transistor Structure

2007 ◽  
Vol 555 ◽  
pp. 125-130
Author(s):  
Rajko M. Šašić ◽  
P.M. Lukić
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Conduction Mechanism ◽  
Mobility Model ◽  
Transistor Structure ◽  
Organic Field Effect Transistor ◽  
Current Voltage ◽  
Polymer Semiconductor ◽  
Effect Transistor

Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.

A Comparative Numerical Study of Junctionless and p-i-n Tunneling Carbon Nanotube Field Effect Transistor

2017 ◽  
Vol 45 ◽  
pp. 55-75 ◽  
Author(s):  
Rouzbeh Molaei Imen Abadi ◽  
Seyed Ali Sedigh Ziabari
Keyword(s):  
Carbon Nanotube ◽  
Delay Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Numerical Study ◽  
Channel Length ◽  
Novel Device ◽  
Device Structures ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper, a gate-all-around junctionless tunnel field effect transistor (JL-TFET) based on carbon nanotube (CNT) material is introduced and simulated. The JL-TFET is a CNT-channel heavily n-type-doped junctionless field effect transistor (JLFET) which utilizes two insulated gates (Control-Gate, P-Gate) with two different metal workfunctions in order to treat like tunnel field effect transistor (TFET). In this design, the privileges of JLTFET and TFET are mixed together. The numerical comparative study on the performance characteristics of JL-TFET and conventional p-i-n TFET demonstrated that the proposed JL-TFET has a higher ON-state current driveability (ION), a larger ON/OFF-current ratio (ION/IOFF), a lower drain induced barrier lowering (DIBL), a shorter delay time (τ), and also a superior cut-off frequency (ƒT). Moreover, in order to further performance improvement of proposed JLTFET, three novel device structures namely as junctionless linear descending gate workfunction TFET (JL-LDWTFET), junctionless linear ascending gate workfunction TFET (JL-LAWTFET) and junctionless triple metal gate TFET (JL-TMGTFET) are proposed by gate workfunction engineering approach. According to simulation results, the JL-TMGTFET with the gate composed of three segments of different work functions shows excellent characteristics with high ION/IOFF ratio, a superior ambipolar characteristic, a shorter delay time and a better cut-off frequency compared to conventional p-i-n TFET and other proposed junctionless-based features. All the simulations are done with the full quantum mechanical simulator for a channel length of 60-nm using nonequilibrium Green’s function (NEGF) method.

Field effect transistor behavior of Bi2Se3 nanostructure prepared by laser ablation

2019 ◽  
Vol 33 (14n15) ◽  
pp. 1940015
Author(s):  
Pankaj Koinkar ◽  
Yu Ohsumi ◽  
Akihiro Furube ◽  
Kei-Ichiro Murai ◽  
Toshihiro Moriga ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Information ◽  
Laser Ablation In Liquid ◽  
Liquid Environment ◽  
Effect Transistor ◽  
Uv Visible ◽  
Optical Applications ◽  
20 Nm

A new class of emerging materials known as topological insulators (TIs), such as bismuth selenide [Formula: see text], has an insulating band gap in the bulk and gapless surface state protected by its intrinsic time-reversal symmetry. These TI materials have attracted great attention because of their possible prospects in electrical and optical applications. In this work, we have prepared the [Formula: see text] nanostructure using the nanosecond (ns) pulse laser ablation in liquid environment to study the field effect transistor behavior. After the laser ablation, [Formula: see text] nanostructures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-visible spectroscopy to reveal the surface morphology and structural information. The field effect transistor (FET) has been fabricated using [Formula: see text] nanostructure by drop casting [Formula: see text] suspension between two gold electrodes having a gap of 3 [Formula: see text]m on [Formula: see text] substrate and tested for FET at various gate voltages. The SEM clearly shows the formation of [Formula: see text] nanoparticles of different size varying from 20 nm to 30 nm after the ns laser ablation treatment. This result is supported by UV-visible spectra, as indicated by the enhancement in absorption band. The experimental results showed that charge conduction due to electrons as charge carriers were possible in [Formula: see text] nanoparticle FET. This work provides another approach to use [Formula: see text] nanoparticle FET for the applications in optoelectronic devices.

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