scholarly journals A Rigorous Analysis of Self-Heating Effects in Nanoscale Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFETs

Author(s):  
Vaibhav Purwar ◽  
Rajeev Gupta ◽  
Pramod Kumar Tiwari ◽  
Sarvesh Dubey

Abstract Dielectric Pocket Double-Gate-All-Around (DP-DGAA) MOSFETs are one of the preferred choices for ULSI applications because of significantly low off-current, reduced power dissipation, and high immunity to short channel effect. However, DP-DGAA MOSFETs suffer from self-heating owing to the unavailability of proper heat take-out paths. In this paper, the electrothermal (ET) simulations have been performed with hydrodynamic and thermodynamic transport models to analyze the self-heating effects (SHEs) in DP-DGAA MOSFETs. The electrothermal characteristics against various device parameters such as spacer length, device thickness, thermal contact resistance, and drain voltage have been investigated. The effect of SHE on the drive current has also been evaluated. Further, the impact of thermal contact resistance and ambient temperature variations of the device on SHE and thermal noise have been analyzed using Sentaurus TCAD simulator.

2021 ◽  
Author(s):  
Vaibhav Purwar ◽  
Rajeev Gupta ◽  
Pramod Kumar Tiwari ◽  
Sarvesh Dubey

Abstract The dielectric pocket gate-all-around (DPGAA) MOSFET is being considered the best suited candidate for ULSI electronic chips because of excellent electrostatic control over the channel. However, the phenomena of self-heating and hot carrier injection (HCI) severely affect the performance of the device, and make the behaviour of the DPGAA FET very unpredictable. In the present article, a comprehensive investigation under the influence of self-heating effects has been done for the variation in the lattice and carrier temperature against spacer length, ambient temperature, device length, and thermal contact resistance including ON and Off currents with gate bias voltage (VGS). In order to analyse the SHEs, the hydrodynamic (HD) and thermodynamic (TD) transport models have been used for three-dimensional (3D) electrothermal (ET) simulation. The Lucky (hot carrier injection) model has been used to study the HCI degradation in DPGAA MOSFET using Sentaurus 3D TCAD simulator.


2011 ◽  
Vol 338 ◽  
pp. 241-244
Author(s):  
Hong Lin Zhao ◽  
Rui Chen ◽  
Yu Mei Huang ◽  
Guang Peng Zhang ◽  
Bo Wang ◽  
...  

It is commonly used method to analyze the overall thermal characteristics of mechanical structure without considering the thermal contact resistance of components. But in terms of precision composite grinding machine, the impact of thermal contact resistance can not be ignored. On the basic of thermal contact resistance characteristics, this article gives the concept and empirical value of the equivalent area factor. By calculating the equivalent contact coefficient, the thermal contact resistance characteristics were integrated into the grinder simulation. According to the structure and processing characteristics of grinder, grinding machine was analyzed in two parts respectively to get the pattern of temperature rise and thermal deformation. Analysis shows the impact that thermal deformation has on working accuracy, so as to provide basis to the compensation of numerical control system to improve the working accuracy.


Author(s):  
M. K. Thompson ◽  
J. M. Thompson

Surface topography has long been considered a key factor in the performance of many contact applications. However, essentially all analytical and numerical contact models either neglect surface topography or make simplifications and assumptions about the nature of the surface which limit the quality of the models. This work presents a method for creating surface geometry by importing surface metrology data into a commercial finite element program. The measured surface geometry is then combined with a multi-scale thermal/structural finite element model to demonstrate the impact of geometric surface assumptions on the prediction of thermal contact resistance.


2010 ◽  
Vol 132 (4) ◽  
Author(s):  
Christopher T. DeGroot ◽  
Derek Gateman ◽  
Anthony G. Straatman

A numerical study on the effect of thermal contact resistance and its impact on the performance of finned aluminum foam heat sinks has been conducted. Calculations are based on the solution of the volume-averaged mass, momentum, and energy equations under conditions of local thermal nonequilibrium using a finite-volume-based computational fluid dynamics code for conjugate fluid/porous/solid domains. Numerical results have been obtained for a wide range of contact resistances at the porous-solid interfaces, up to the limit of an effectively infinite resistance. As the contact resistance is increased to such high levels, the heat transfer is found to asymptote as conduction into the solid constituent of the foam is completely blocked. Even without conduction into the solid, a convective enhancement is obtained due to the presence of the foam material. It is reasoned that this is due to the thinning of the momentum boundary layers as a result of the presence of the porous material, which acts as a momentum sink. As a result of the thinner boundary layers, the flow speed near the finned surfaces and base is increased, which serves to increase the rate of convection from these surfaces. It is also found that for most reasonable interface materials, such as thermal epoxies, the impact of thermal contact resistance on the heat transfer performance in comparison to that for an ideal bond is small.


2020 ◽  
Vol 27 (7) ◽  
pp. 617-627
Author(s):  
Yuanyuan Tian ◽  
Mengjun Zhang ◽  
Junli Wang ◽  
Anbang Liu ◽  
Huaqing Xie ◽  
...  

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