High temperature growth of SiC and group III nitride structures in production reactors

2002 ◽  
Author(s):  
D. Schmitz ◽  
R. Beccard ◽  
G. Strauch ◽  
H. Juergensen ◽  
E. Woelk ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Growth ◽  
Group Iii ◽  
Group Iii Nitride

scholarly journals Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Hwan-Seop Yeo ◽  
Kwanjae Lee ◽  
Young Chul Sim ◽  
Seoung-Hwan Park ◽  
Yong-Hoon Cho
Keyword(s):  
Quantum Wire ◽  
Quantum Wires ◽  
Geometrical Shape ◽  
Optical Polarization ◽  
Polarization Anisotropy ◽  
Single Quantum ◽  
Group Iii ◽  
Highly Efficient ◽  
Group Iii Nitride ◽  
Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

scholarly journals Genetic analysis of temperature-sensitive lethal mutants of Salmonella typhimurium.

Genetics ◽  
1989 ◽  
Vol 123 (4) ◽  
pp. 625-633 ◽  
Author(s):  
M B Schmid ◽  
N Kapur ◽  
D R Isaacson ◽  
P Lindroos ◽  
C Sharpe
Keyword(s):  
High Temperature ◽  
Genetic Analysis ◽  
Salmonella Typhimurium ◽  
Complex Medium ◽  
Temperature Sensitive ◽  
Nonpermissive Temperature ◽  
Anaerobic Conditions ◽  
Temperature Growth ◽  
Lethal Phenotype ◽  
Lethal Mutations

Abstract We have isolated 440 mutants of Salmonella typhimurium that show temperature-sensitive growth on complex medium at 44 degrees. Approximately 16% of the mutations in these strains have been mapped to 17 chromosomal locations; two of these chromosomal locations seem to include several essential genes. Genetic analysis of the mutations suggests that the collection saturates the genes readily mutable to a ts lethal phenotype in S. typhimurium. Physiological characteristics of the ts lethal mutants were tested: 6% of the mutants can grow at high temperature under anaerobic conditions, 17% can grow when the medium includes 0.5 M KCl, and 9% of the mutants die after a 2-hr incubation at the nonpermissive temperature. Most ts lethal mutations in this collection probably affect genes required for growth at all temperatures (not merely during high temperature growth) since Tn10 insertions that cause a temperature-sensitive lethal phenotype are rare.

NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices

2016 ◽  
Vol 6 (2) ◽  
pp. Q3067-Q3070 ◽  
Author(s):  
J. D. Greenlee ◽  
A. Nath ◽  
T. J. Anderson ◽  
B. N. Feigelson ◽  
A. D. Koehler ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Devices ◽  
Capping Layer ◽  
Group Iii ◽  
Nitride Semiconductor ◽  
Group Iii Nitride

Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

2004 ◽  
Vol 1 (8) ◽  
pp. 2210-2227 ◽  
Author(s):  
M. Hermann ◽  
E. Monroy ◽  
A. Helman ◽  
B. Baur ◽  
M. Albrecht ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Vertical Transport ◽  
Resonant Tunneling Diodes ◽  
Group Iii ◽  
Tunneling Diodes ◽  
Group Iii Nitride

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride

Exciton localization in group-III nitride quantum wells

1999 ◽  
Vol 59 (15) ◽  
pp. 9783-9786 ◽  
Author(s):  
V. I. Litvinov ◽  
M. Razeghi
Keyword(s):  
Quantum Wells ◽  
Group Iii ◽  
Exciton Localization ◽  
Group Iii Nitride
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