scholarly journals Botryis-induced Postharvest Losses of Cut Roses May be Reduced by Electron-bean Irradiation

HortScience ◽  
1995 ◽  
Vol 30 (4) ◽  
pp. 835E-835
Author(s):  
Ai-Yu Chang ◽  
Mark L. Gleason ◽  
Nancy H. Agnew ◽  
Dennis G. Olson ◽  
Richard T. Gladon
Keyword(s):  
Electron Beam ◽  
Botrytis Cinerea ◽  
Untreated Control ◽  
Electron Beam Irradiation ◽  
Postharvest Quality ◽  
Beam Irradiation ◽  
Flower Bud ◽  
Postharvest Life ◽  
Rose Petal ◽  
Bud Opening

Irradiated cut Rosa × hybrida `Royalty' flowers were used to determine the efficacy of electron-beam irradiation for extending flower postharvest life by reducing native and inoculated populations of Botrytis cinerea. In preliminary experiments, roses received irradiation dosages of 0.00, 0.50,1.00, 2.00, and 4.00 kilogray (kGy), along with an untreated control, to establish killing dosages. Irradiation dosages of 1.00 kGy or greater irreversibly damaged rose petal tissue. In subsequent experiments, roses irradiated at dosages of 0.00, 0.25, 0.50, 0.75, and 1.00 kGy, and an untreated control, were used for evaluating postharvest events. We have found that irradiation dosages of 0.25 and 0.50 kGy slowed the rate of flower bud opening slightly and did not decrease postharvest quality or longevity. Inoculated and uninoculated roses irradiated at 0.00, 0.25, 0.50, and 0.75 kGy were used to determine if electron-beam irradiation could reduce Botrytis infection and proliferation during postharvest storage, and these results also will be presented.

scholarly journals Postharvest Quality of Cut Roses Following Electron-beam Irradiation

HortScience ◽  
1997 ◽  
Vol 32 (4) ◽  
pp. 698-701 ◽  
Author(s):  
Ai-Yu Chang ◽  
Richard J. Gladon ◽  
Mark L. Gleason ◽  
Sharon K. Parker ◽  
Nancy H. Agnew ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Postharvest Quality ◽  
Beam Irradiation ◽  
Flower Bud ◽  
Injury Threshold ◽  
Postharvest Life ◽  
Bud Opening ◽  
Fourth Experiment

Cut Rosa ×hybrida L. `Royalty' flowers were used to determine the efficacy of electron-beam irradiation for increasing postharvest quality and decreasing petal infection by Botrytis cinerea Pers. In an experiment for determining the injury threshold, roses received electron-beam irradiation of 0, 0.5, 1, 2, and 4 kGy. Irradiation dosages ≥1 kGy caused necrosis on petal tissue and decreased postharvest life at 20 °C. In a second experiment to evaluate postharvest quality, roses were irradiated at 0, 0.25, 0.5, 0.75, and 1 kGy. Dosages of 0.25 and 0.5 kGy slowed the rate of flower bud opening for 2 days but did not decrease postharvest quality when compared with nonirradiated roses. Roses that received irradiation dosages of 0.75 and 1 kGy showed unacceptable quality. In a third experiment, roses that had or had not been inoculated with B. cinerea were irradiated at 0, 0.25, 0.5, and 0.75 kGy. Irradiation did not control B. cinerea populations, and rose quality decreased as dosage increased. In a fourth experiment to determine the effect of irradiation on B. cinerea, conidia on water-agar plates exposed to dosages ≤1, 2, and 4 kGy germinated at rates of ≈90%, 33%, and 2%, respectively, within 24 h.

Improvement of Shelf Life and Postharvest Quality of White Button Mushroom by Electron Beam Irradiation

2013 ◽  
Vol 38 (4) ◽  
pp. 1673-1681 ◽  
Author(s):  
Yaqvob Mami ◽  
Gholamali Peyvast ◽  
Farhood Ziaie ◽  
Mahmood Ghasemnezhad ◽  
Vahid Salmanpour
Keyword(s):  
Electron Beam ◽  
Shelf Life ◽  
Electron Beam Irradiation ◽  
Postharvest Quality ◽  
Beam Irradiation ◽  
Button Mushroom ◽  
White Button Mushroom

Methods to Monitor and Improve the Performance of Specimen Holders for Transmission Electron Cryomicroscopy

1996 ◽  
Vol 54 ◽  
pp. 454-455
Author(s):  
B. L. Armbruster ◽  
B. Kraus ◽  
M. Pan
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Beam Irradiation ◽  
Quality Of Data ◽  
Electron Cryomicroscopy ◽  
Thermal Equilibration ◽  
Transmission Electron ◽  
Electron Microscopes

One goal in electron microscopy of biological specimens is to improve the quality of data to equal the resolution capabilities of modem transmission electron microscopes. Radiation damage and beam- induced movement caused by charging of the sample, low image contrast at high resolution, and sensitivity to external vibration and drift in side entry specimen holders limit the effective resolution one can achieve. Several methods have been developed to address these limitations: cryomethods are widely employed to preserve and stabilize specimens against some of the adverse effects of the vacuum and electron beam irradiation, spot-scan imaging reduces charging and associated beam-induced movement, and energy-filtered imaging removes the “fog” caused by inelastic scattering of electrons which is particularly pronounced in thick specimens.Although most cryoholders can easily achieve a 3.4Å resolution specification, information perpendicular to the goniometer axis may be degraded due to vibration. Absolute drift after mechanical and thermal equilibration as well as drift after movement of a holder may cause loss of resolution in any direction.

A Study of Electron Beam Irradiation Influence on Device Contact Junction Characteristics of Advanced DRAM Using Atomic Force Probing

2013 ◽  
Author(s):  
Wei-Chih Wang ◽  
Jian-Shing Luo
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Forward Bias ◽  
Irradiation Damage ◽  
Beam Irradiation ◽  
Excess Current ◽  
Atomic Force ◽  
Order Of Magnitude ◽  
Voltage Contrast ◽  
Acceleration Voltage

Abstract In this paper, we revealed p+/n-well and n+/p-well junction characteristic changes caused by electron beam (EB) irradiation. Most importantly, we found a device contact side junction characteristic is relatively sensitive to EB irradiation than its whole device characteristic; an order of magnitude excess current appears at low forward bias region after 1kV EB acceleration voltage irradiation (Vacc). Furthermore, these changes were well interpreted by our Monte Carlo simulation results, the Shockley-Read Hall (SRH) model and the Generation-Recombination (G-R) center trap theory. In addition, four essential examining items were suggested and proposed for EB irradiation damage origins investigation and evaluation. Finally, by taking advantage of the excess current phenomenon, a scanning electron microscope (SEM) passive voltage contrast (PVC) fault localization application at n-FET region was also demonstrated.

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