Effect of Pt-Ni Deposition Sequence in PtNi-Modified Boron-Doped Diamond on Catalytic Performance for Glucose Oxidation Under Neutral pH Conditions

We report the electrosynthesis of Fe(vi) in a flow reactor operating in batch recirculation mode at neutral conditions using boron doped diamond (BDD) and Fe(iii).

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Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

Applied Surface Science ◽

10.1016/j.apsusc.2010.11.041 ◽

2011 ◽

Vol 257 (8) ◽

pp. 3433-3439 ◽

Cited By ~ 32

Author(s):

Yujie Feng ◽

Jiangwei Lv ◽

Junfeng Liu ◽

Na Gao ◽

Hongyan Peng ◽

...

Keyword(s):

Boron Concentration ◽

Growth Characteristic ◽

Chemical Vapor ◽

Catalytic Performance ◽

Diamond Electrodes ◽

Plasma Chemical ◽

Boron Doped Diamond ◽

Plasma Chemical Vapor Deposition ◽

Boron Doped ◽

Direct Current Plasma

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Sensitive Electrochemical Detection of Glucose at Glucose Oxidase-Cobalt Phthalocyanine-Modified Boron-Doped Diamond Electrode

International Journal of Electrochemistry ◽

10.1155/2012/943957 ◽

2012 ◽

Vol 2012 ◽

pp. 1-6 ◽

Cited By ~ 7

Author(s):

Takeshi Kondo ◽

Masaru Horitani ◽

Makoto Yuasa

Keyword(s):

Thin Film ◽

Glucose Oxidase ◽

Electrochemical Detection ◽

Glucose Oxidation ◽

Microwave Plasma ◽

Cobalt Phthalocyanine ◽

Electron Mediator ◽

Boron Doped Diamond ◽

Bdd Electrode ◽

Boron Doped

Electrochemical detection of glucose was achieved at a glucose oxidase (GOx)-cobalt phthalocyanine (CoPc)-modified boron-doped diamond (BDD) electrode without any additional electron mediator in the electrolyte solution. The surface of the hydrogen-terminated BDD thin film prepared by microwave plasma-assisted CVD was modified with 4-vinylpyridine (4VP) via photochemical modification. The 4VP-BDD was then immersed in a CoPc solution to obtain CoPc-BDD. A poly(p-phenylenediamine) (PPD) thin film containing GOx was coated on the CoPc-BDD electrode surface via electropolymerization. At the GOx/PPD-CoPc-BDD electrode, anodic current for glucose oxidation was observed with a sigmoidal voltammetric curve, indicating successful electron mediation of H2O2generated as the result of glucose oxidation at GOx. The signal-to-background ratio for voltammetric current of glucose detection was larger at the GOx/PPD-CoPc-BDD electrode than at the GOx/PPD-modified platinum electrode due to the smaller background current of the modified BDD electrode.

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Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

MRS Proceedings ◽

10.1557/proc-764-c3.9 ◽

2003 ◽

Vol 764 ◽

Author(s):

Hiroyuki Togawa ◽

Hideki Ichinose

Keyword(s):

Ab Initio ◽

Grain Boundaries ◽

Ab Initio Calculation ◽

Structure Model ◽

Boron Doped Diamond ◽

Boron Doped ◽

Transmission Electron ◽

Diamond Grain ◽

Electron Energy Loss ◽

Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

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DICLOFENAC REMOVAL FROM AQUEOUS SOLUTIONS BY ELECTROOXIDATION AT BORON-DOPED DIAMOND (BDD) ELECTRODE

Environmental Engineering and Management Journal ◽

10.30638/eemj.2015.145 ◽

2015 ◽

Vol 14 (6) ◽

pp. 1339-1345

Author(s):

Monica Ihos ◽

Florica Manea ◽

Maria Jitaru ◽

Corneliu Bogatu ◽

Rodica Pode

Keyword(s):

Aqueous Solutions ◽

Boron Doped Diamond ◽

Bdd Electrode ◽

Boron Doped

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Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽

10.3390/pr8060666 ◽

2020 ◽

Vol 8 (6) ◽

pp. 666 ◽

Cited By ~ 2

Author(s):

Nikolay Ivanovich Polushin ◽

Alexander Ivanovich Laptev ◽

Boris Vladimirovich Spitsyn ◽

Alexander Evgenievich Alexenko ◽

Alexander Mihailovich Polyansky ◽

...

Keyword(s):

Film Growth ◽

Chemical Vapor ◽

Hydrogen Gas ◽

Diamond Growth ◽

Structural Defects ◽

Boron Doped Diamond ◽

Diamond Deposition ◽

Synthesis Conditions ◽

Surface Etching ◽

Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

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