Role of Point Defects and Defect Complexes in Silicon Device Processing: Summary Report and Papers of the Second Workshop, 24-26 August 1992, Breckenridge, Colorado

ABSTRACTEnergetic ion beams used outside the traditional role of ion implantation are considered for semiconductor applications involving interface modification for self-aligned silicide contacts, composition modification for formation of buried oxide layers in Si on insulator structures and reduced disorder in high energy ion beam annealing for buried collectors in transistor fabrication. In metals, aside from their use in modification of the composition of near surface regions, energetic ion beams are being investigated for structural modification in crystalline to amorphous transitions. Pulsed beams of photons and electrons are used as directed energy sources in rapid solidification. Here, we consider the role of temperature gradients and impurities in epitaxial growth of silicon.

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Role of induced quadrupoles in the simulation of intrinsic point defects in AgCl and NaCl

Physical Review B ◽

10.1103/physrevb.48.6839 ◽

1993 ◽

Vol 48 (10) ◽

pp. 6839-6853 ◽

Cited By ~ 5

Author(s):

Radha D. Banhatti ◽

Y. V. G. S. Murti

Keyword(s):

Point Defects ◽

Intrinsic Point Defects

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Evidence of Hysteresis in a New p-i-n-i-p-i-n Amorphous Silicon Device

MRS Proceedings ◽

10.1557/proc-467-943 ◽

1997 ◽

Vol 467 ◽

Author(s):

D. Caputo ◽

G. De Cesare ◽

F. Palma

Keyword(s):

Charge Trapping ◽

Bistable Behavior ◽

Novel Device ◽

Voltage Curve ◽

Current Voltage ◽

Recombination Processes ◽

Current Voltage Curve ◽

Numerical Device ◽

Silicon Device

ABSTRACTA novel device based on a-Si:H p+-i-n−-i-p−-i-n+ structure, showing a hysteresis in its current-voltage curve is reported. A numerical device model allows to investigate in detail the fundamental role of the two lightly doped n− and p− layers, where charge trapping determines the bistable behavior of the device. The ON condition is mantained until the ambipolar charge injection overcomes the fixed charge. The transition OFF-ON starts when, increasing the applied voltage, one of the two lightly doped layers becomes completely depleted. The transition ON-OFF is, instead, mainly dependent on the recombination processes occurring in the central doped layers. Devices with hysteresis around 2 V and tum-on voltage around 12 are presented.

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Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface

Nano Express ◽

10.1088/2632-959x/abe990 ◽

2021 ◽

Vol 2 (1) ◽

pp. 014005 ◽

Cited By ~ 1

Author(s):

K Loeto ◽

G Kusch ◽

P-M Coulon ◽

SM Fairclough ◽

E Le Boulbar ◽

...

Keyword(s):

Point Defects ◽

Core Shell

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Self Diffusion in SiC: the Role of Intrinsic Point Defects

Materials Science Forum ◽

10.4028/www.scientific.net/msf.353-356.323 ◽

2001 ◽

Vol 353-356 ◽

pp. 323-326 ◽

Cited By ~ 36

Author(s):

Alexander Mattausch ◽

M. Bockstedte ◽

Oleg Pankratov

Keyword(s):

Point Defects ◽

Intrinsic Point Defects ◽

Self Diffusion

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Point defects and blue LED efficiency: the critical role of indium

Light-Emitting Devices, Materials, and Applications XXV ◽

10.1117/12.2576683 ◽

2021 ◽

Author(s):

Thomas Weatherley ◽

Wei Liu ◽

Camille Haller ◽

Yao Chen ◽

Duncan T. L. Alexander ◽

...

Keyword(s):

Point Defects ◽

Critical Role ◽

Blue Led

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From Point to Filament Defects in Hybrid Nematic Films

Scientific Reports ◽

10.1038/s41598-019-50948-w ◽

2019 ◽

Vol 9 (1) ◽

Cited By ~ 1

Author(s):

Cesare Chiccoli ◽

Paolo Pasini ◽

Claudio Zannoni ◽

Gregor Skačej ◽

Hiroyuki Yoshida ◽

...

Keyword(s):

Monte Carlo ◽

Point Defects ◽

Elastic Constants ◽

3D Structure ◽

Support Surface ◽

Hybrid Films ◽

Surface Ordering ◽

Polarized Microscopy ◽

Homeotropic Alignment

AbstractWe have studied nematic hybrid films with homeotropic alignment at the top surface and various controlled degrees of in plane ordering, going from a random degenerate organization to a completely uniform alignment along one direction, at the bottom one. We show, by Monte Carlo (MC) computer simulations and experiments on photopatterned films with the bottom support surface fabricated with in-plane order similar to the simulated ones, that the point defects observed in the case of random planar orientations at the bottom tend to arrange along a filament as the surface ordering is sufficiently increased. MC simulations complement the polarized microscopy texture observations allowing to inspect the 3D structure of the defects and examine the role of elastic constants.

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