Optimum Design for Eliminating Back Gate Bias Effect of Silicon-oninsulator Lateral Double Diffused Metal-oxide-semiconductor Field Effect Transistor with Low Doping Buried Layer
2008 ◽
Vol 2
(1)
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pp. 56-61
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2021 ◽
Vol 134
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pp. 106046
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2020 ◽
Vol 21
(3)
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pp. 339-347
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1997 ◽
Vol 9
(8)
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pp. 1143-1145
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2010 ◽
Vol 49
(4)
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pp. 04DE16
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