Расчет влияния плотности ионного тока и температуры на кинетику накопления точечных дефектов при облучении кремния легкими ионами

AbstractNumerical calculations of the accumulation kinetics of point defects—vacancies and divacancies—under the irradiation of Si with ions having masses of M _1 ≤ 31 amu and energies of E ≤ 100 keV under various irradiation conditions are performed. The previously proposed diffusion-coagulation model is used without application of the “weak diffusion” approximation, which was performed during its analytical implementation. The main peculiarities of the dependences of the concentrations of vacancies and divacancies on the dose, ion-current density, and temperature under irradiation are analyzed. A physical interpretation of these results is given. The developed computing complex is rather flexible and makes it possible to analyze the influence of model input parameters by means of their variation and include additional processes into consideration if necessary.

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Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions

Semiconductors ◽

10.1134/s1063782618090105 ◽

2018 ◽

Vol 52 (9) ◽

pp. 1091-1096 ◽

Cited By ~ 1

Author(s):

E. V. Okulich ◽

V. I. Okulich ◽

D. I. Tetelbaum

Keyword(s):

Point Defects ◽

Current Density ◽

Ion Current ◽

Light Ions ◽

Accumulation Kinetics ◽

Ion Current Density ◽

Kinetics Of

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The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus

Vacuum ◽

10.1016/0042-207x(75)91459-1 ◽

1975 ◽

Vol 25 (4) ◽

pp. 174

Keyword(s):

Current Density ◽

Ion Bombardment ◽

Ion Current ◽

Radiation Defects ◽

Target Temperature ◽

Electrophysical Properties ◽

Silicon Doped ◽

Ion Current Density ◽

Kinetics Of

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Radiation-induced change of polyimide properties under high-fluence and high ion current density implantation

Applied Physics A ◽

10.1007/s00339-003-2166-9 ◽

2004 ◽

Vol 78 (7) ◽

pp. 1067-1072 ◽

Cited By ~ 17

Author(s):

V.N. Popok ◽

I.I. Azarko ◽

R.I. Khaibullin ◽

A.L. Stepanov ◽

V. Hnatowicz ◽

...

Keyword(s):

Current Density ◽

Ion Current ◽

High Fluence ◽

Radiation Induced ◽

Ion Current Density

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Effect of plasma nitriding ion current density on the nitriding kinetics and tribological properties of composite CrAlN coatings

Ceramics International ◽

10.1016/j.ceramint.2021.10.182 ◽

2021 ◽

Author(s):

Xin Zhang ◽

Xiubo Tian ◽

Chunzhi Gong ◽

Xiangli Liu ◽

Jin Li ◽

...

Keyword(s):

Tribological Properties ◽

Current Density ◽

Plasma Nitriding ◽

Ion Current ◽

Ion Current Density

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Far-Field Plume Characterization of a 100-W Class Hall Thruster

Aerospace ◽

10.3390/aerospace7050058 ◽

2020 ◽

Vol 7 (5) ◽

pp. 58

Author(s):

Thibault Hallouin ◽

Stéphane Mazouffre

Keyword(s):

Energy Distribution ◽

Current Density ◽

Low Voltage ◽

Ion Current ◽

Hall Thruster ◽

Far Field ◽

Ion Energy ◽

Ion Energy Distribution ◽

The Core ◽

Ion Current Density

The 100 W-class ISCT100-v2 Hall Thruster (HT) has been characterized in terms of far-field plume properties. By means of a Faraday Cup and a Retarding Potential Analyzer, both the ion current density and the ion energy distribution function have been measured over a 180 ∘ circular arc for different operating points. Measurements are compared to far-field plume characterizations performed with higher power Hall thrusters. The ion current density profiles remain unchanged whatever the HT input power, although an asymptotic limit is observed in the core of the plume at high discharge voltages and anode mass flow rates. In like manner, the ion energy distribution functions reveal that most of the beam energy is concentrated in the core of the plume [ − 40 ∘ ; 40 ∘ ] . Moreover, the fraction of low energy ion populations increases at large angles, owing to charge exchange and elastic collisions. Distinct plume regions are identified; they remain similar to the one described for high-power HTs. An efficiency analysis is also performed in terms of current utilization, mass utilization, and voltage utilization. The anode efficiency appears to be essentially affected by a low voltage utilization, the latter originating from the large surface-to-volume ratio inherent to low-power HTs. Experimental results also show that the background pressure clearly affects the plume structure and content.

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